Ngokukhiqizwa ngobuningi kancane kancane kwe-conductive SiC substrates, izidingo eziphakeme zibekwe phambili ukuze kube nokuzinza nokuphindaphinda kwenqubo. Ikakhulukazi, ukulawulwa kweziphambeko, ukulungiswa okuncane noma ukukhukhuleka kwenkundla yokushisa esithandweni somlilo, kuzoletha izinguquko zekristalu noma ukwanda kweziphambeko. Esikhathini esilandelayo, kufanele sibhekane nenselele "yokukhula ngokushesha, okude nokushubile, nokukhula", ngaphezu kokuthuthukiswa kwethiyori nobunjiniyela, sidinga futhi izinto ezithuthukisiwe zensimu eshisayo njengokwesekwa. Sebenzisa izinto ezithuthukisiwe, khulisa amakristalu athuthukile.
Ukusetshenziswa okungalungile kwezinto ezihlabayo, njenge-graphite, i-porous graphite, i-tantalum carbide powder, njll endaweni eshisayo kuzoholela ekukhubazekeni okufana nokwanda kwekhabhoni yokufakwa. Ngaphezu kwalokho, kwezinye izinhlelo zokusebenza, ukungena kwe-graphite ye-porous akwanele, futhi izimbobo ezengeziwe ziyadingeka ukuze kwandiswe ukungena. I-graphite enezimbotshana ene-permeability ephezulu ibhekene nezinselelo zokucubungula, ukususwa kwempushana, ukuqopha nokunye.
I-VET yethula isizukulwane esisha se-SiC crystal ekhulisa insimu eshisayo, i-porous tantalum carbide. I-debut yomhlaba.
Amandla nobulukhuni be-tantalum carbide kuphezulu kakhulu, futhi ukuyenza ibe nezimbotshana kuyinselele. Ukwenza i-tantalum carbide enezimbotshana ene-porosity enkulu kanye nokuhlanzeka okuphezulu kuyinselele enkulu. I-Hengpu Technology yethule ukuphumelela kwe-tantalum carbide ene-porosity enkulu, ene-porosity ephezulu ye-75%, ehola umhlaba.
Ukuhlunga kwengxenye yesigaba segesi, ukulungiswa kwe-gradient yokushisa kwendawo, isiqondiso sokugeleza kwezinto ezibonakalayo, ukulawula ukuvuza, njll., kungasetshenziswa. Ingasetshenziswa nenye i-tantalum carbide eqinile (i-compact) noma i-tantalum carbide coating evela ku-Hengpu Technology ukwenza izingxenye zendawo ngokuqhutshwa kokugeleza okuhlukile.
Ezinye izingxenye zingasetshenziswa kabusha.
Isikhathi sokuthumela: Jul-14-2023