Inqubo yokukhiqiza ye-reactive sintering silicon carbide

I-Reaction-sintered silicon carbide iyinto ebalulekile yokushisa okuphezulu, enamandla amakhulu, ubulukhuni obukhulu, ukumelana nokugqokwa okuphezulu, ukumelana nokugqwala okuphezulu kanye nokumelana ne-oxidation ephezulu kanye nezinye izakhiwo ezinhle kakhulu, isetshenziswa kakhulu emishinini, emkhathini, embonini yamakhemikhali, amandla nokunye. amasimu.

 

1. Ukulungiselela impahla eluhlaza

Ukulungiswa kwe-reactive sintering silicon carbide raw materials ikakhulukazi i-carbon ne-silicon powder, lapho ikhabhoni ingasetshenziswa izinto ezihlukahlukene ezine-carbon, njenge-coke yamalahle, i-graphite, amalahle, njll., i-silicon powder ivame ukukhethwa nezinhlayiya. usayizi we-1-5μm wokuhlanzeka okuphezulu kwe-silicon powder. Okokuqala, i-carbon ne-silicon powder ixutshwe ngesilinganiso esithile, yengeza inani elifanele le-binder kanye ne-ejenti yokugeleza, futhi inyakaze ngokulinganayo. Ingxube ibe isifakwa esigayweni sebhola ukuze kugaywe ibhola ukuze kuqhutshekwe nokuxubaniswa okufanayo nokugaya kuze kube usayizi wezinhlayiyana ube ngaphansi kuka-1μm.

2. Inqubo yokubumba

Inqubo yokubumba ingesinye sezinyathelo ezibalulekile ekwenziweni kwe-silicon carbide. Izinqubo zokubumba ezivame ukusetshenziswa ukucindezela ukubumba, ukubumba kwe-grouting kanye nokubumba okumile. Ukwakhiwa kwecindezela kusho ukuthi ingxube ifakwa esikhunjeni futhi yakhiwe ukucindezela komshini. Ukubumba i-Grouting kusho ukuxuba ingxube namanzi noma isincibilikisi esiphilayo, ukuyijova esibunjeni ngesirinji ngaphansi kwezimo ze-vacuum, nokwenza umkhiqizo osuphelile ngemva kokuma. Ukubumba kwe-Static pressure kubhekise kwingxube esikhunjeni, ngaphansi kokuvikelwa kwe-vacuum noma umkhathi wokubumba ingcindezi emile, ngokuvamile ngengcindezi engu-20-30MPa.

3. Inqubo ye-Sintering

I-Sintering iyisinyathelo esibalulekile enqubweni yokukhiqiza ye-react-sintered silicon carbide. Izinga lokushisa le-Sintering, isikhathi sokucwilisa, umoya we-sintering nezinye izici zizothinta ukusebenza kwe-react-sintered silicon carbide. Ngokuvamile, izinga lokushisa elishisayo le-reactive sintering silicon carbide liphakathi kuka-2000-2400℃, isikhathi se-sintering ngokuvamile singamahora angu-1-3, futhi umkhathi we-sintering uvame ukungena, njenge-argon, i-nitrogen, njalonjalo. Ngesikhathi sokushisa, ingxube izobhekana nokusabela kwamakhemikhali ukwenza amakristalu e-silicon carbide. Ngasikhathi sinye, ikhabhoni izophinde ibhekane namagesi emkhathini ukukhiqiza amagesi afana ne-CO ne-CO2, okuzothinta ukuminyana kanye nezakhiwo ze-silicon carbide. Ngakho-ke, ukugcina isimo se-sintering esifanelekile kanye nesikhathi se-sintering kubaluleke kakhulu ekwenzeni i-react-sintered silicon carbide.

4. Inqubo emva kokwelashwa

I-Reaction-sintered silicon carbide idinga inqubo yokwelashwa ngemuva kokukhiqiza. Izinqubo ezivamile zangemuva kokwelashwa ziwumshini, ukugaya, ukupholisha, i-oxidation nokunye. Lezi zinqubo zenzelwe ukuthuthukisa ukunemba kanye nekhwalithi ephezulu ye-react-sintered silicon carbide. Phakathi kwazo, inqubo yokugaya nokupholisha iyindlela evamile yokucubungula, engathuthukisa ukuqeda kanye nokuqina kwe-silicon carbide surface. Inqubo ye-oxidation ingakha ungqimba lwe-oxide ukuthuthukisa ukumelana ne-oxidation nokuzinza kwamakhemikhali we-react-sintered silicon carbide.

Ngamafuphi, ukukhiqizwa kwe-silicon carbide esebenzayo kuyinqubo eyinkimbinkimbi, edinga ukwazi ubuchwepheshe obuhlukahlukene nezinqubo, okuhlanganisa ukulungiswa kwempahla eluhlaza, inqubo yokubumba, inqubo ye-sintering kanye nenqubo yokwelashwa ngemva kokwelashwa. Kuphela ngokuqonda ngokuphelele lobu buchwepheshe nezinqubo lapho kungakhiqizwa izinto zokwakha ze-silicon carbide zekhwalithi ephezulu ukuze kuhlangatshezwane nezidingo zezinkambu zohlelo lokusebenza.