Ubuchwepheshe be-Laser buholela ekuguqulweni kobuchwepheshe bokucubungula i-silicon carbide substrate

 

1. Uhlolojikelele lwei-silicon carbide substrateubuchwepheshe bokucubungula

Okwamanjei-silicon carbide substrate ukucubungula izinyathelo zifaka: ukugaya umbuthano wangaphandle, ukusika, i-chamfering, ukugaya, ukupholisha, ukuhlanza, njll. Ukusika kuyisinyathelo esibalulekile ekucubunguleni kwe-semiconductor substrate kanye nesinyathelo esibalulekile sokuguqula ingot ku-substrate. Njengamanje, ukusika kwei-silicon carbide substratesikakhulukazi ukusika ucingo. I-Multi-wire slurry cutting iyindlela engcono kakhulu yokusika izintambo okwamanje, kodwa kusenezinkinga zekhwalithi yokusika empofu kanye nokulahlekelwa okukhulu kokusika. Ukulahlekelwa ukusika ucingo kuzokhula ngokwanda kosayizi we-substrate, okungahambisani ne-i-silicon carbide substrateabakhiqizi ukuze bathole ukunciphisa izindleko kanye nokwenza ngcono ukusebenza kahle. Ngenqubo yokusikaI-silicon carbide engu-8 intshi ama-substrates, ukuma okungaphezulu kwe-substrate etholwe ngokusika ucingo kubi, futhi izici zezinombolo ezifana ne-WARP ne-BOW azilungile.

Ukusika kuyisinyathelo esibalulekile ekukhiqizeni i-semiconductor substrate. Imboni ihlale izama izindlela ezintsha zokusika, njengokusika izintambo zedayimane nokukhumula i-laser. Ubuchwepheshe bokukhumula i-laser buye bafunwa kakhulu muva nje. Ukwethulwa kwalobu buchwepheshe kunciphisa ukulahleka kokusika futhi kuthuthukisa ukusebenza kahle kokusika kusuka kumgomo wezobuchwepheshe. Isixazululo se-laser stripping sinezidingo eziphezulu zezinga lokuzenzekelayo futhi sidinga ubuchwepheshe bokunciphisa ukuze sisebenzisane naso, esihambisana nesiqondiso sokuthuthukiswa kwesikhathi esizayo sokucubungula kwe-silicon carbide substrate. Isivuno sikacezu sokusika kocingo lodaka lwendabuko ngokuvamile singu-1.5-1.6. Ukwethulwa kobuchwepheshe bokukhumula i-laser kungakhuphula isivuno sikacezu siye cishe ku-2.0 (bheka amathuluzi e-DISCO). Ngokuzayo, njengoba ukukhula kobuchwepheshe bokuhlubula i-laser kwanda, isivuno socezu singathuthukiswa ngokwengeziwe; ngesikhathi esifanayo, ukukhumula i-laser kungathuthukisa kakhulu ukusebenza kahle kokusika. Ngokusho kocwaningo lwemakethe, umholi wemboni i-DISCO usika ucezu cishe emaminithini angu-10-15, okusebenza kahle kakhulu kunokusika ucingo lwamanje lwamaminithi angu-60 ucezu ngalunye.

Izinyathelo zenqubo yokusikwa kwezintambo zendabuko ze-silicon carbide substrates yilezi: i-wire cutting-rough grinding-fine grinding-rough polishing kanye nokupholishwa kahle. Ngemuva kokuthi inqubo yokuhlubula i-laser ithathe indawo yokusika ucingo, inqubo yokunciphisa isetshenziselwa ukufaka esikhundleni senqubo yokugaya, okunciphisa ukulahlekelwa kwezingcezu futhi kuthuthukise ukusebenza kahle kokucubungula. Inqubo yokuhlubula nge-laser yokusika, ukugaya kanye nokupholishwa kwama-silicon carbide substrates ihlukaniswe ngezinyathelo ezintathu: i-laser surface scanning-substrate stripping-ingot flattening: ukuskena kwendawo ye-laser ukusebenzisa ama-ultrafast laser pulses ukucubungula ingaphezulu le-ingot ukwenza okushintshiwe. ungqimba ngaphakathi kwe-ingot; ukuhlubula i-substrate ukuhlukanisa i-substrate ngaphezu kwesendlalelo esilungisiwe kusuka ku-ingot ngezindlela ezibonakalayo; ingot flattening ukususa isendlalelo esilungisiwe ebusweni be-ingot ukuze kuqinisekiswe ukucaba kwendawo yeingot.
Inqubo yokuhlubula i-silicon carbide laser

 

2. Inqubekelaphambili yamazwe ngamazwe kubuchwepheshe bokukhumula i-laser kanye nezinkampani ezibamba iqhaza ezimbonini

Inqubo yokukhumula i-laser yamukelwa okokuqala yizinkampani zaphesheya kwezilwandle: Ngo-2016, i-DISCO yaseJapan yathuthukisa ubuchwepheshe obusha bokusika i-laser, i-KABRA, eyenza ungqimba oluhlukanisayo futhi ihlukanise ama-wafers ekujuleni okucacisiwe ngokuqhubeka nokunisela ingot nge-laser, engasetshenziselwa izinto ezahlukahlukene. izinhlobo ze-SiC ingots. NgoNovemba 2018, i-Infineon Technologies yathola i-Siltectra GmbH, isiqalo sokusika i-wafer, ngama-euro ayizigidi ezingu-124. Owokugcina uthuthukise inqubo ye-Cold Split, esebenzisa ubuchwepheshe be-laser obunelungelo lobunikazi ukuchaza uhla lokuhlukanisa, ukumboza izinto ezikhethekile ze-polymer, isistimu yokulawula ingcindezi ebangelwa ukupholisa, izinto zokuhlukanisa ngokunembile, nokugaya nokuhlanza ukuze kuzuzwe ukusikwa kwe-wafer.

Eminyakeni yamuva, ezinye izinkampani zasekhaya ziye zangena embonini yemishini yokuhlubula i-laser: izinkampani eziyinhloko yi-Han's Laser, i-Delong Laser, i-West Lake Instrument, i-Universal Intelligence, i-China Electronics Technology Group Corporation kanye ne-Institute of Semiconductors ye-Chinese Academy of Sciences. Phakathi kwazo, izinkampani ezisohlwini lwe-Han's Laser kanye ne-Delong Laser sezinesakhiwo isikhathi eside, futhi imikhiqizo yazo iqinisekiswa ngamakhasimende, kodwa inkampani inemigqa eminingi yomkhiqizo, futhi imishini yokukhumula i-laser ingelinye lamabhizinisi abo. Imikhiqizo yezinkanyezi ezikhulayo njenge-West Lake Instrument izuze ukuthunyelwa okuhlelekile; I-Universal Intelligence, i-China Electronics Technology Group Corporation 2, i-Institute of Semiconductors ye-Chinese Academy of Sciences nezinye izinkampani nazo zikhiphe inqubekelaphambili yemishini.

 

3. Izici zokushayela zokuthuthukiswa kobuchwepheshe bokukhumula i-laser kanye nesigqi sokwethulwa kwemakethe

Ukwehliswa kwentengo yama-6-inch silicon carbide substrates kuqhuba ukuthuthukiswa kobuchwepheshe bokukhumula i-laser: Njengamanje, intengo yama-6-inch silicon carbide substrates yehle ngaphansi kuka-4,000 yuan/ucezu, isondela enanini lezindleko zabanye abakhiqizi. Inqubo yokukhumula i-laser inezinga eliphezulu lokukhiqiza kanye nenzuzo eqinile, eqhuba izinga lokungena lobuchwepheshe bokukhumula i-laser ukuthi lenyuke.

Ukuncishiswa kwama-8-inch silicon carbide substrates kuqhuba ukuthuthukiswa kobuchwepheshe bokukhumula i-laser: Ugqinsi lwama-8-inch silicon carbide substrates njengamanje luyi-500um, futhi luthuthukela ekugqitheni okungu-350um. Inqubo yokusika izintambo ayisebenzi ekucutshungulweni kwe-silicon carbide engu-8-intshi (indawo engaphansi ayilungile), futhi amanani e-BOW kanye ne-WARP aye wonakala kakhulu. Ukukhumula i-laser kuthathwa njengobuchwepheshe bokucubungula obudingekayo bokucubungula i-350um silicon carbide substrate, okushayela izinga lokungena lobuchwepheshe bokukhumula i-laser ukuthi lenyuke.

Okulindelwe yimakethe: Izinzuzo zemishini yokuhlubula i-laser ye-SiC substrate kusukela ekwandeni kwe-SiC engu-8-intshi kanye nokwehliswa kwezindleko kuka-6-intshi SiC. Iphuzu elibalulekile lamanje lemboni liyasondela, futhi ukuthuthukiswa kwemboni kuzosheshisa kakhulu.