Isingeniso sobuchwepheshe obuthathu obujwayelekile be-CVD

Ukufakwa komhwamuko wamakhemikhali(CVD)ubuchwepheshe obusetshenziswa kakhulu embonini ye-semiconductor yokufaka izinto ezihlukahlukene, okuhlanganisa inhlobonhlobo yezinto zokuvikela ukushisa, izinto eziningi zensimbi kanye nezinto ze-alloy zensimbi.

I-CVD ubuchwepheshe bendabuko bokulungiselela ifilimu elincanyana. Umgomo wawo uwukusebenzisa izandulela zegesi ukubola izakhi ezithile ku-precursor ngokusebenzisa ukusabela kwamakhemikhali phakathi kwama-athomu nama-molecule, bese kwakha ifilimu elincanyana ku-substrate. Izici eziyisisekelo ze-CVD yilezi: izinguquko zamakhemikhali (ukusabela kwamakhemikhali noma ukubola okushisayo); zonke izinto ezisefilimu zivela emithonjeni yangaphandle; ama-reactants kufanele abambe iqhaza ekuphenduleni ngendlela yesigaba segesi.

I-low pressure chemical vapor deposition (LPCVD), i-plasma enhanced chemical vapor deposition (PECVD) kanye ne-high density plasma chemical vapor deposition (HDP-CVD) ubuchwepheshe obuthathu obujwayelekile be-CVD, abanomehluko omkhulu ekubekweni kwezinto ezibonakalayo, izidingo zemishini, izimo zenqubo, njll. Okulandelayo yincazelo elula kanye nokuqhathanisa lobu buchwepheshe obuthathu.

1. I-LPCVD (i-Low Pressure CVD)

Isimiso: Inqubo ye-CVD ngaphansi kwezimo zengcindezi ephansi. Umgomo wawo uwukujova igesi yokusabela egumbini lokusabela ngaphansi kwe-vacuum noma indawo enengcindezi ephansi, ukubola noma ukusabela igesi ngokushisa okuphezulu, bese kwakha ifilimu eqinile efakwe endaweni engaphansi. Njengoba ingcindezi ephansi inciphisa ukungqubuzana kwegesi kanye nesiyaluyalu, ukufana nekhwalithi yefilimu kuyathuthukiswa. I-LPCVD isetshenziswa kakhulu ku-silicon dioxide (LTO TEOS), i-silicon nitride (Si3N4), i-polysilicon (POLY), ingilazi ye-phosphosilicate (BSG), ingilazi ye-borophosphosilicate (BPSG), i-polysilicon ene-doped, i-graphene, i-carbon nanotubes namanye amafilimu.

Izici:

▪ Izinga lokushisa lenqubo: ngokuvamile liphakathi kuka-500 ~ 900°C, izinga lokushisa lenqubo liphakeme uma kuqhathaniswa;
▪ Ibanga lokucindezela kwegesi: indawo enengcindezi ephansi ye-0.1~10 Torr;
▪ Izinga lefilimu: izinga eliphezulu, ukufana okuhle, ukuminyana okuhle, namaphutha ambalwa;
 Izinga lokubeka phansi: izinga lokuhamba kancane;
▪ Ukufana: kulungele ama-substrate amakhulu, ukubekwa okufanayo;

Okuhle nokubi:

 Angafaka amafilimu afanayo kakhulu naminyene;
▪ Isebenza kahle kuma-substrates amakhulu, alungele ukukhiqizwa ngobuningi;
▪ Izindleko eziphansi;
▪ Izinga lokushisa eliphezulu, elingazifanele izinto ezingezwani nokushisa;
▪ Izinga le-deposition lihamba kancane futhi okukhiphayo kuphansi.

2. I-PECVD (i-Plasma Enhanced CVD)

Isimiso: Sebenzisa i-plasma ukuze uvule ukusabela kwesigaba segesi emazingeni okushisa aphansi, wenze i-ionize futhi ubolise ama-molecule egesi esabelayo, bese ufaka amafilimu amancane endaweni engaphansi. Amandla e-plasma anganciphisa kakhulu izinga lokushisa elidingekayo ekuphenduleni, futhi anezinhlelo eziningi ezahlukene. Amafilimu ensimbi ahlukahlukene, amafilimu angaphili namafilimu ezinto eziphilayo angalungiswa.

Izici:

▪ Ukushisa kwenqubo: ngokuvamile phakathi kuka-200 ~ 400°C, izinga lokushisa liphansi uma kuqhathaniswa;
▪ Ibanga lomfutho wegesi: ngokuvamile amakhulu e-mTorr kuya kumaTorr amaningana;
▪ Izinga lefilimu: nakuba ukufana kwefilimu kukuhle, ukuminyana nezinga lefilimu alilingani ne-LPCVD ngenxa yokukhubazeka okungenzeka kwethulwe yi-plasma;
▪ Izinga lokubeka: izinga eliphezulu, ukusebenza kahle kokukhiqiza;
▪ Ukufana: okungaphansi kancane kune-LPCVD kuma-substrates anosayizi omkhulu;

Okuhle nokubi:

▪ Amafilimu azacile angafakwa emazingeni okushisa aphansi, afanele izinto ezingezwani nokushisa;
▪ Ijubane lokubeka ngokushesha, elifanele ukukhiqizwa okuphumelelayo;
▪ Inqubo eguquguqukayo, izakhiwo zefilimu zingalawulwa ngokulungisa imingcele ye-plasma;
 I-Plasma ingase yethule ukukhubazeka kwefilimu okufana nezimbobo noma ukungafani;
▪ Uma kuqhathaniswa ne-LPCVD, ukuminyana kwefilimu nekhwalithi kubi kakhulu.

3. HDP-CVD (High Density Plasma CVD)

Isimiso: Ubuchwepheshe obukhethekile be-PECVD. I-HDP-CVD (eyaziwa nangokuthi i-ICP-CVD) ingakhiqiza ukuminyana okuphezulu kwe-plasma kanye nekhwalithi kunemishini ye-PECVD evamile emazingeni okushisa aphansi e-deposition. Ngaphezu kwalokho, i-HDP-CVD inikeza cishe ukuzimela kwe-ion flux kanye nokulawulwa kwamandla, ukuthuthukisa imisele noma amandla okugcwalisa imbobo okufuna ukufakwa kwefilimu, njengama-anti-reflective coatings, ukufakwa kwe-dielectric engaguquki yezinto ezibonakalayo, njll.

Izici:

▪ Izinga lokushisa lenqubo: izinga lokushisa lekamelo liya ku-300℃, izinga lokushisa lenqubo liphansi kakhulu;
▪ Ibanga lomfutho wegesi: phakathi kuka-1 no-100 mTorr, ngaphansi kune-PECVD;
▪ Izinga lefilimu: ukuminyana okuphezulu kwe-plasma, izinga lefilimu eliphezulu, ukufana okuhle;
▪ Izinga lokubeka: izinga lokubeka liphakathi kwe-LPCVD ne-PECVD, liphakeme kancane kune-LPCVD;
▪ Ukufana: ngenxa ye-plasma esondelene kakhulu, ukufana kwefilimu kuhle kakhulu, kulungele indawo engaphansi emise okuyinkimbinkimbi;

Okuhle nokubi:

▪ Iyakwazi ukufaka amafilimu ekhwalithi ephezulu emazingeni okushisa aphansi, afaneleka kakhulu izinto ezingezwani nokushisa;
▪ Ukufana kwefilimu okuhle kakhulu, ukuminyana nokushelela kwendawo;
▪ Ukuminyana kwe-plasma ephakeme kuthuthukisa ukufana kwe-deposition kanye nefilimu;
▪ Imishini eyinkimbinkimbi nezindleko eziphakeme;
▪ Ijubane lokumiswa lihamba kancane, futhi amandla amaningi e-plasma angase adale umonakalo omncane.

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