Isingeniso se-semiconductor yesizukulwane sesithathu se-GaN kanye nobuchwepheshe be-epitaxial obuhlobene

1. Ama-semiconductors esizukulwane sesithathu

Ubuchwepheshe besizukulwane sokuqala se-semiconductor bathuthukiswa ngokusekelwe ezintweni ezisetshenziswayo ezifana ne-Si ne-Ge. Kuyisisekelo esibonakalayo sokuthuthukiswa kwama-transistors kanye nobuchwepheshe besifunda esihlanganisiwe. Izinto ze-semiconductor zesizukulwane sokuqala zabeka isisekelo semboni ye-elekthronikhi ekhulwini lama-20 futhi ziyizinto eziyisisekelo zobuchwepheshe besekethe obuhlanganisiwe.

Izinto ze-semiconductor yesizukulwane sesibili ikakhulukazi zifaka i-gallium arsenide, i-indium phosphide, i-gallium phosphide, i-indium arsenide, i-aluminium arsenide nezinhlanganisela zazo ze-ternary. Izinto ze-semiconductor zesizukulwane sesibili ziyisisekelo semboni yolwazi ye-optoelectronic. Ngalesi sisekelo, izimboni ezihlobene ezifana nezibani, isibonisi, i-laser, nama-photovoltaics ziye zathuthukiswa. Zisetshenziswa kabanzi kubuchwepheshe bolwazi besimanje kanye nezimboni zokubonisa i-optoelectronic.

Izinto ezimelela izinto ze-semiconductor yesizukulwane sesithathu zifaka i-gallium nitride ne-silicon carbide. Ngenxa yegebe lebhendi elibanzi, isivinini sokukhukhuleka kwama-electron aphezulu, ukushintshwa kwe-thermal ephezulu, namandla enkundla ephukile, ziyizinto ezisetshenziswayo zokulungiselela ukuminyana kwamandla aphezulu, imvamisa ephezulu, kanye namadivayisi kagesi alahlekelwa kancane. Phakathi kwazo, amadivaysi kagesi e-silicon carbide anezinzuzo zokuminyana kwamandla aphezulu, ukusetshenziswa kwamandla aphansi, nosayizi omncane, futhi anamathemba abanzi okusebenza ezimotweni zamandla amasha, ama-photovoltaics, ezokuthutha ngesitimela, idatha enkulu, neminye imikhakha. Amadivayisi we-Gallium nitride RF anezinzuzo zokuvama okuphezulu, amandla aphezulu, umkhawulokudonsa obanzi, ukusetshenziswa kwamandla okuphansi kanye nosayizi omncane, futhi anamathemba okusebenza abanzi ekuxhumaneni kwe-5G, i-Inthanethi Yezinto, i-radar yezempi nezinye izinkambu. Ngaphezu kwalokho, amadivaysi asekelwe ku-gallium nitride asesetshenziswe kabanzi emkhakheni we-low-voltage. Ngaphezu kwalokho, eminyakeni yamuva nje, izinto ezisafufusa ze-gallium oxide kulindeleke ukuthi zenze ukuhambisana kobuchwepheshe nobuchwepheshe obukhona be-SiC ne-GaN, futhi zibe nethuba lokufaka isicelo ezindaweni eziphansi-frequency kanye ne-high-voltage.

Uma kuqhathaniswa nezinto zokwakha ze-semiconductor yesizukulwane sesibili, izinto zokwakha ze-semiconductor yesizukulwane sesithathu zinobubanzi be-bandgap ebanzi (ububanzi be-bandgap be-Si, into evamile yempahla ye-semiconductor yesizukulwane sokuqala, cishe i-1.1eV, ububanzi be-bandgap ye-GaAs, ejwayelekile impahla yesizukulwane sesibili semiconductor impahla, cishe 1.42eV, futhi ububanzi bandgap I-GaN, into evamile yesizukulwane sesithathu se-semiconductor material, ingaphezu kuka-2.3eV), ukumelana nokukhanya okuqinile emisebeni, ukumelana okuqinile nokuwohloka kwensimu kagesi, nokumelana nokushisa okuphezulu. Izinto ze-semiconductor yesizukulwane sesithathu ezinobubanzi be-bandgap ebanzi zifaneleka ngokukhethekile ukukhiqizwa kwamadivayisi we-elekthronikhi angavimbeli, ama-high-frequency, amandla aphezulu kanye nokuhlanganisa okuphezulu-ukuminyana. Ukusetshenziswa kwabo emishinini yefrikhwensi yomsakazo we-microwave, ama-LED, ama-laser, izinto zikagesi neminye imikhakha kudonse ukunaka okukhulu, futhi babonise amathemba entuthuko ebanzi kwezokuxhumana ngomakhalekhukhwini, amagridi ahlakaniphile, ezokuthutha ngojantshi, izimoto ezintsha zamandla, izinto zikagesi ezithengwayo, kanye ne-ultraviolet ne-blue. -amadivayisi okukhanya okuluhlaza [1].