UWENZA KANJANI I-SILICON WAFER

UWENZA KANJANI I-SILICON WAFER

A isilucwecwanaiwucezu lwe-silicon oluwugqinsi oluyimilimitha elingu-1 olunendawo eyisicaba ngokwedlulele ngenxa yezinqubo ezidingeka kakhulu ngokobuchwepheshe. Ukusetshenziswa okulandelayo kunquma ukuthi iyiphi inqubo yokukhula kwekristalu okufanele isetshenziswe. Enqubweni ye-Czochralski, isibonelo, i-silicon ye-polycrystalline iyancibilika futhi ikristalu yembewu encane yepensela ifakwe ku-silicon encibilikisiwe. Ikristalu yembewu ibe isijikeleziswa futhi kancane idonselwa phezulu. I-colossus enzima kakhulu, i-monocrystal, imiphumela. Kungenzeka ukukhetha izici zikagesi ze-monocrystal ngokungeza amayunithi amancane ama-dopants ahlanzekile kakhulu. Amakristalu afakwa ngokuhambisana nokucaciswa kwekhasimende abese epholishwa futhi asikwe abe izingcezu. Ngemuva kwezinyathelo ezingeziwe zokukhiqiza ezengeziwe, ikhasimende lithola ama-wafers alo acacisiwe emaphaketheni akhethekile, okuvumela ikhasimende ukuthi lisebenzise i-wafer ngokushesha emgqeni wayo wokukhiqiza.

INQUBO YE-CZOCHRALSKI

Namuhla, ingxenye enkulu ye-silicon monocrystals ikhulile ngokwenqubo ye-Czochralski, ehlanganisa ukuncibilika kwe-silicon ye-polycrystalline high-purity ku-crucible quartz hyperpure kanye nokwengeza i-dopant (imvamisa i-B, P, As, Sb). Ikristalu elincane, le-monocrystalline imbewu licwiliswa ku-silicon encibilikisiwe. Ikristalu enkulu ye-CZ ibe isikhula kusukela kule crystal encane. Ukulawulwa okunembayo kwezinga lokushisa le-silicon encibilikisiwe kanye nokugeleza, ukuzungezisa kwekristalu ne-crucible, kanye nesivinini sokudonsa ngekristalu kuphumela ku-silicon ingot yekhwalithi ephezulu kakhulu ye-monocrystalline.

FLOAT ZONE INDLELA

Ama-monocrystals akhiwe ngokwendlela ye-float zone alungele ukusetshenziswa ezingxenyeni ze-semiconductor yamandla, njengama-IGBT. I-cylindrical polycrystalline ingot ye-silicon igxunyekwe phezu kwekhoyili yokungeniswa. Inkambu ye-radio frequency electromagnetic isiza ukuncibilikisa i-silicon engxenyeni engezansi yenduku. Inkambu ye-electromagnetic ilawula ukugeleza kwe-silicon ngembobo encane kukhoyili yokungeniswa bese ingena ku-monocrystal engaphansi (indlela yendawo yokuntanta). I-doping, imvamisa eno-B noma i-P, ifinyelelwa ngokungeza izinto ezinegesi.


Isikhathi sokuthumela: Jun-07-2021
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