I-SiC single crystal iyisisetshenziswa se-semiconductor yeQembu IV-IV esakhiwe izakhi ezimbili, u-Si no-C, ngesilinganiso se-stoichiometric esingu-1:1. Ukuqina kwayo kungokwesibili ngemva kwedayimane.
Ukwehliswa kwekhabhoni yendlela ye-silicon oxide yokulungiselela i-SiC kusekelwe ikakhulukazi kule fomula yokusabela kwamakhemikhali elandelayo:
Inqubo yokusabela yokunciphisa i-carbon ye-silicon oxide iyinkimbinkimbi, lapho izinga lokushisa lokusabela lithinta ngokuqondile umkhiqizo wokugcina.
Enqubweni yokulungiselela i-silicon carbide, izinto zokusetshenziswa zifakwa kuqala esithandweni somlilo. Isithando somlilo sokumelana siqukethe izindonga zokugcina emikhawulweni yomibili, ene-graphite electrode phakathi nendawo, futhi ingqikithi yesithando somlilo ixhuma ama-electrode amabili. Emaphethelweni engqikithi yesithando somlilo, izinto ezingavuthiwe ezibamba iqhaza ekuphenduleni zifakwa kuqala, bese izinto ezisetshenziselwa ukugcinwa kokushisa zibekwe endaweni ezungezile. Lapho ukuncibilika kuqala, isithando somlilo sokumelana senziwa amandla futhi izinga lokushisa likhuphukela ku-2,600 kuya ku-2,700 degrees Celsius. Amandla okushisa kagesi adluliselwa enkombeni ngokusebenzisa ingaphezulu lengqikithi yesithando somlilo, okubangela ukuthi ishiselwe kancane kancane. Lapho izinga lokushisa lokushaja lidlula i-1450 degrees Celsius, kwenzeka ukusabela kwamakhemikhali ukuze kukhiqizwe i-silicon carbide negesi ye-carbon monoxide. Njengoba inqubo yokuncibilika iqhubeka, indawo yokushisa ephezulu ekushajeni izokhula kancane kancane, futhi inani le-silicon carbide elikhiqizwayo nalo lizokhula. I-Silicon carbide yenziwa ngokuqhubekayo esithandweni, futhi ngokusebenzisa ukuhwamuka nokunyakaza, amakristalu kancane kancane akhula futhi ekugcineni aqoqane abe amakristalu angama-cylindrical.
Ingxenye yodonga lwangaphakathi lwekristalu iqala ukubola ngenxa yokushisa okuphezulu okudlula i-2,600 degrees Celsius. Isici se-silicon esikhiqizwe ukubola sizophinde sihlangane ne-carbon element ekushajelweni ukuze yakhe i-silicon carbide entsha.
Lapho ukusabela kwamakhemikhali e-silicon carbide (SiC) sekuphelile futhi isithando somlilo sesiphole, isinyathelo esilandelayo singaqala. Okokuqala, izindonga zesithando somlilo ziyahlakazwa, bese kuthi izinto zokusetshenziswa esithandweni zikhethwe futhi zibekwe ungqimba ngongqimba. Izinto zokusetshenziswa ezikhethiwe ziyachotshozwa ukuze kutholwe i-granular material esiyifunayo. Okulandelayo, ukungcola ezintweni zokusetshenziswa kususwa ngokugeza kwamanzi noma ukuhlanza ngezixazululo ze-asidi ne-alkali, kanye nokuhlukaniswa kwamagnetic nezinye izindlela. Izinto zokusetshenziswa ezihlanziwe zidinga ukomiswa bese zihlolwa futhi, futhi ekugcineni kungatholakala impushana ehlanzekile ye-silicon carbide. Uma kunesidingo, lezi zimpushana zingasetshenzwa ngokuqhubekayo ngokuvumelana nokusetshenziswa kwangempela, njengokubunjwa noma ukugaya okuhle, ukukhiqiza i-silicon carbide powder kakhudlwana.
Izinyathelo ezithile zimi kanje:
(1) Izinto zokusetshenziswa
I-silicon carbide micro powder eluhlaza ikhiqizwa ngokuchoboza i-silicon carbide eluhlaza. Ukwakheka kwamakhemikhali e-silicon carbide kufanele kube kukhulu kuno-99%, futhi i-carbon yamahhala ne-iron oxide kufanele ibe ngaphansi kuka-0.2%.
(2)Iphukile
Ukuchoboza isihlabathi se-silicon carbide sibe yimpuphu ecolekile, izindlela ezimbili ezisetshenziswa njengamanje eChina, eyodwa ukugaywa kwebhola elimanzi ngezikhathi ezithile, kanti enye igaya kusetshenziswa isigayo sempushana yokugeleza komoya.
(3)Ukuhlukaniswa kukamagnetic
Kungakhathaliseki ukuthi iyiphi indlela esetshenziselwa ukuchoboza i-silicon carbide powder ibe yimpushana ecolekile, ukuhlukaniswa kazibuthe okumanzi kanye nokwehlukanisa kazibuthe ngomshini kuvame ukusetshenziswa. Lokhu kungenxa yokuthi alukho uthuli ngesikhathi sokuhlukaniswa kukazibuthe okumanzi, izinto zikazibuthe zihlukaniswa ngokuphelele, umkhiqizo ngemva kokuhlukaniswa kazibuthe uqukethe insimbi encane, kanti i-silicon carbide powder ethathwe izinto kazibuthe nayo incane.
(4)Ukuhlukaniswa kwamanzi
Umgomo oyisisekelo wendlela yokuhlukanisa amanzi ukusebenzisa izivinini ezihlukene zokumisa izinhlayiya ze-silicon carbide zamadayamitha ahlukene emanzini ukwenza ukuhlunga usayizi wezinhlayiyana.
(5) Ukuhlolwa kwe-ultrasonic
Ngokuthuthukiswa kobuchwepheshe be-ultrasonic, ibuye yasetshenziswa kabanzi ekuhlolweni kwe-ultrasonic kobuchwepheshe be-micro-powder, obungakwazi ukuxazulula izinkinga zokuhlola ezifana ne-adsorption eqinile, i-agglomeration elula, ugesi omile ophakeme, ukuqina okuphezulu, ukuminyana okuphezulu, kanye namandla adonsela phansi acacile. .
(6)Ukuhlolwa kwekhwalithi
Ukuhlolwa kwekhwalithi ye-Micropowder kuhlanganisa ukwakheka kwamakhemikhali, ukwakheka kosayizi wezinhlayiyana nezinye izinto. Ukuthola izindlela zokuhlola namazinga ekhwalithi, sicela ubheke “Izimo Zezobuchwepheshe Ze-Silicon Carbide.”
(7) Ukukhiqizwa kothuli lokugaya
Ngemuva kokuthi i-micro powder iqoqwe futhi ihlolwe, ikhanda lezinto ezibonakalayo lingasetshenziswa ukulungisa impushana yokugaya. Ukukhiqizwa kwe-powder yokugaya kunganciphisa imfucuza futhi kunwebe uchungechunge lomkhiqizo.
Isikhathi sokuthumela: May-13-2024