Inqubo ye-BCD

Iyini inqubo ye-BCD?

Inqubo ye-BCD iwubuchwepheshe benqubo ehlanganisiwe ye-single-chip eyethulwa okokuqala yi-ST ngo-1986. Lobu buchwepheshe bungenza amadivaysi e-bipolar, CMOS kanye ne-DMOS ku-chip efanayo. Ukubukeka kwayo kunciphisa kakhulu indawo ye-chip.

Kungashiwo ukuthi inqubo ye-BCD isebenzisa ngokugcwele izinzuzo zekhono lokushayela i-Bipolar, ukuhlanganiswa okuphezulu kwe-CMOS nokusetshenziswa kwamandla aphansi, kanye ne-DMOS yamandla kagesi aphezulu kanye namandla aphezulu okugeleza kwamanje. Phakathi kwazo, i-DMOS iwukhiye wokuthuthukisa amandla nokuhlanganiswa. Ngokuthuthuka okuqhubekayo kobuchwepheshe besekethe obuhlanganisiwe, inqubo ye-BCD isiphenduke ubuchwepheshe bokukhiqiza obujwayelekile be-PMIC.

Inqubo ye-BCD ye-cross-sectional diagram, inethiwekhi yomthombo, ngiyabonga

Izinzuzo zenqubo ye-BCD

Inqubo ye-BCD yenza amadivaysi e-Bipolar, amadivaysi e-CMOS, namadivayisi kagesi e-DMOS ku-chip efanayo ngesikhathi esifanayo, ehlanganisa ukuguquguquka okuphezulu nekhono lokushayela umthwalo oqinile wamadivayisi we-bipolar kanye nokuhlanganiswa okuphezulu kanye nokusetshenziswa kwamandla okuphansi kwe-CMOS, ukuze akwazi ukuhambisana. omunye nomunye futhi anikeze umdlalo ogcwele ezinzuzweni zawo; ngesikhathi esifanayo, i-DMOS ingasebenza ekushintsheni imodi esebenzisa amandla aphansi kakhulu. Ngamafuphi, ukusetshenziswa kwamandla okuphansi, ukusebenza kahle kwamandla aphezulu kanye nokuhlanganiswa okuphezulu kungenye yezinzuzo eziyinhloko ze-BCD. Inqubo ye-BCD inganciphisa kakhulu ukusetshenziswa kwamandla, ithuthukise ukusebenza kwesistimu futhi ibe nokwethembeka okungcono. Imisebenzi yemikhiqizo ye-elekthronikhi iyanda usuku nosuku, futhi izimfuneko zokushintsha kwamandla kagesi, ukuvikelwa kwe-capacitor kanye nokunwetshwa kwempilo yebhethri kuya ngokuya kubaluleke kakhulu. Izici zejubane eliphezulu nezonga amandla ze-BCD zihlangabezana nezidingo zenqubo yokusebenza okuphezulu kwe-analog/ama-chips okuphatha amandla.

Ubuchwepheshe obubalulekile benqubo ye-BCD

Imishini evamile yenqubo ye-BCD ihlanganisa i-CMOS ene-voltage ephansi, amashubhu e-MOS anamandla amakhulu, i-LDMOS enama-voltage okuhlukana ahlukahlukene, ama-diode aqondile we-NPN/PNP nama-Schottky, njll. Ezinye izinqubo ziphinde zihlanganise amadivayisi afana ne-JFET ne-EEPROM, okuholela ezinhlobonhlobo ezinkulu amadivaysi kunqubo ye-BCD. Ngakho-ke, ngaphezu kokucabangela ukuhambisana kwamadivayisi ane-voltage ephezulu kanye namadivayisi aphansi, izinqubo zokuchofoza kabili kanye nezinqubo ze-CMOS, njll. ekwakhiweni, ubuchwepheshe obufanele bokuhlukanisa kufanele bucatshangelwe.

Kubuchwepheshe bokuhlukaniswa kwe-BCD, ubuchwepheshe obuningi obufana nokuhlukaniswa kwe-junction, ukuzihlukanisa nokuhlukaniswa kwe-dielectric kuye kwavela ngokulandelana. Ubuchwepheshe bokuhlukaniswa kwe-Junction ukwenza idivayisi kungqimba lwe-N-uhlobo lwe-epitaxial ye-substrate yohlobo lwe-P futhi isebenzise izici zokuhlehla zokuhlehla ze-PN junction ukuze kuzuzwe ukuhlukaniswa, ngoba ukuhlangana kwe-PN kunokumelana okuphezulu kakhulu ngaphansi kokuchema okuhlanekezelwe.

Ubuchwepheshe bokuzihlukanisa empeleni buwukuzihlukanisa kwe-PN junction, obuthembele kuzici zemvelo zokuhlangana kwe-PN phakathi kwezindawo eziwumthombo nezikhipha amanzi zedivayisi ne-substrate ukuze kuzuzwe ukuhlukaniswa. Lapho ithubhu ye-MOS ivuliwe, indawo yomthombo, indawo yokukhipha amanzi kanye nesiteshi kuzungezwe indawo yokuncipha, okwenza ukuhlukaniswa ne-substrate. Uma ivaliwe, ukuhlangana kwe-PN phakathi kwesifunda sokukhipha amanzi kanye ne-substrate kuchemile okuphambene, futhi i-voltage ephezulu yendawo yomthombo ihlukaniswa yisifunda sokunciphisa.

I-Dielectric isolation isebenzisa imidiya evikelayo efana ne-silicon oxide ukuze kuzuzwe ukuzihlukanisa. Ngokusekelwe ekuhlukaniseni kwe-dielectric kanye nokuhlukaniswa kwe-junction, i-quasi-dielectric isolation iye yathuthukiswa ngokuhlanganisa izinzuzo zakho kokubili. Ngokukhetha ngokukhetha ubuchwepheshe bokuhlukanisa obungenhla, ukuhambisana kwe-high-voltage kanye ne-low-voltage kungafinyelelwa.

Isiqondiso sokuthuthukiswa kwenqubo ye-BCD

Ukuthuthukiswa kobuchwepheshe benqubo ye-BCD akufani nenqubo evamile ye-CMOS, ehlale ilandela umthetho ka-Moore ukuze ithuthuke ekuqondeni kobubanzi bomugqa omncane kanye nesivinini esisheshayo. Inqubo ye-BCD ihlukaniswa cishe futhi ithuthukiswe ngezindlela ezintathu: amandla kagesi aphezulu, amandla aphezulu, kanye nokuminyana okuphezulu.

1. High-voltage BCD direction

I-BCD ene-voltage ephezulu ingakwazi ukwenza amasekhethi okulawula amandla aphansi athembeke kakhulu kanye namasekhethi eleveli ye-DMOS ephezulu kakhulu ku-chip efanayo ngesikhathi esifanayo, futhi ingabona ukukhiqizwa kwamadivayisi anamandla kagesi aphezulu angu-500-700V. Kodwa-ke, ngokuvamile, i-BCD isafanele imikhiqizo enezidingo eziphakeme uma kuqhathaniswa zamadivayisi kagesi, ikakhulukazi i-BJT noma amadivaysi e-DMOS amanje kakhulu, futhi ingasetshenziselwa ukulawula amandla ekukhanyisweni kwe-elekthronikhi nasezimbonini zokusebenza.

Ubuchwepheshe bamanje bokukhiqiza i-BCD ene-voltage ephezulu ubuchwepheshe be-RESURF obuhlongozwe ngabakwa-Appel et al. ngo-1979. Idivayisi yenziwa kusetshenziswa isendlalelo se-epitaxial esine-doped kancane ukwenza indawo yokusabalalisa insimu kagesi engaphezulu ibe isicaba, ngaleyo ndlela ithuthukise izici zokuwohloka kwendawo, ukuze ukuwohloka kwenzeke emzimbeni esikhundleni sobuso, ngaleyo ndlela kwandise ukuphuka kwe-voltage yedivayisi. I-doping ekhanyayo ingenye indlela yokwandisa i-voltage yokuwohloka kwe-BCD. Ikakhulu isebenzisa i-DDD ehlakazekile ephindwe kabili (i-Doping Drain ephindwe kabili) kanye ne-LDD ene-doped kancane (i-Doping Drain encane). Esifundeni sokudonsa amanzi se-DMOS, isifunda sohlobo lwe-N-drift siyengezwa ukuze kushintshwe ukuxhumana kwasekuqaleni phakathi kwe-N+ drain kanye ne-substrate yohlobo lwe-P ukuze kuthintwane phakathi kwe-N- drain kanye ne-substrate yohlobo lwe-P, ngaleyo ndlela kwandiswe ugesi wokuphuka.

2. Isiqondiso se-BCD samandla aphezulu

Ibanga lamandla kagesi e-BCD enamandla amakhulu lingu-40-90V, futhi lisetshenziswa kakhulu kumishini kagesi yezimoto edinga amandla okushayela amanje aphezulu, amandla kagesi aphakathi nendawo namasekhethi okulawula alula. Izici zayo ezidingekayo amandla okushayela amanje aphezulu, i-voltage emaphakathi, futhi isifunda sokulawula sivame ukuba lula.

3. High-density BCD direction

I-BCD ye-High-density, i-voltage range ingu-5-50V, kanti amanye ama-electronics ezimoto azofinyelela ku-70V. Imisebenzi eminingi eyinkimbinkimbi futhi ehlukahlukene ingahlanganiswa ku-chip efanayo. I-BCD ye-High-density yamukela eminye imibono yedizayini eyimojuli ukuze kuzuzwe ukuhlukahluka komkhiqizo, osetshenziswa kakhulu ezinhlelweni zikagesi zezimoto.

Izicelo eziyinhloko zenqubo ye-BCD

Inqubo ye-BCD isetshenziswa kabanzi ekulawuleni amandla (amandla nokulawula ibhethri), idrayivu yokubonisa, i-automotive electronics, isilawuli sezimboni, njll. I-chip yokuphatha amandla (PMIC) ingenye yezinhlobo ezibalulekile zama-analog chips. Ukuhlanganiswa kwenqubo ye-BCD kanye nobuchwepheshe be-SOI nakho kuyisici esikhulu sokuthuthukiswa kwenqubo ye-BCD.

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