Isicelo nenqubekelaphambili yocwaningo ye-SiC enamathela ku-carbon/carbon thermal field materials for monocrystalline silicon-2

1 Isicelo kanye nenqubekelaphambili yocwaningo lwe-silicon carbide coating ku-carbon/carbon thermal field materials

1.1 Isicelo kanye nenqubekelaphambili yocwaningo ekulungiseleleni i-crucible

Esigabeni esisodwa se-crystal thermal, ii-carbon/carbon crucibleisetshenziswa kakhulu njengomkhumbi othwala izinto ze-silicon futhi ixhumene nei-quartz crucible, njengoba kuboniswe kuMfanekiso 2. Izinga lokushisa elisebenzayo le-carbon/carbon crucible lingaba ngu-1450℃, elingaphansi kokuguguleka okuphindwe kabili kwe-silicon dioxide eqinile (i-silicon dioxide) nomhwamuko we-silicon, futhi ekugcineni i-crucible iba mncane noma ibe nokuqhekeka kwendandatho. , okuholela ekuhlulekeni kwe-crucible.

Ingxube ehlanganisiwe ye-carbon/carbon composite crucible yalungiselelwa inqubo yokufaka umhwamuko wamakhemikhali kanye nokusabela kwe-in-situ. Ingxube eyinhlanganisela yakhiwe nge-silicon carbide coating (100~300μm), i-silicon coating (10~20μm) kanye ne-silicon nitride coating (50~100μm), engavimbela ngempumelelo ukugqwala kwe-silicon vapour endaweni engaphakathi ye-carbon/carbon composite. crucible. Enqubweni yokukhiqiza, ukulahlekelwa kwe-crucible ehlanganisiwe ye-carbon/carbon composite crucible ngu-0.04 mm ngesithando somlilo ngasinye, futhi impilo yesevisi ingafinyelela izikhathi ezingu-180 zomlilo.

Abacwaningi basebenzise indlela yokusabela kwamakhemikhali ukukhiqiza i-silicon carbide coating efanayo ebusweni be-carbon/carbon composite crucible ngaphansi kwezimo ezithile zokushisa nokuvikelwa kwegesi elithwalayo, kusetshenziswa i-silicon dioxide ne-silicon metal njengezinto zokusetshenziswa endaweni yokushisa ephezulu. isithando somlilo. Imiphumela ibonisa ukuthi ukwelashwa okuphezulu kwezinga lokushisa akuthuthukisi kuphela ukuhlanzeka namandla e-sic coating, kodwa futhi kuthuthukisa kakhulu ukumelana nokugqokwa kwendawo ye-carbon/carbon composite, futhi kuvimbela ukugqwala kobuso be-crucible nge-SiO vapor. nama-athomu omoya-mpilo aguquguqukayo esithandweni se-silicon se-monocrystal. Impilo yesevisi ye-crucible ikhuphuke ngo-20% uma iqhathaniswa naleyo ye-crucible ngaphandle kwe-sic coating.

1.2 Isicelo kanye nenqubekelaphambili yocwaningo kushubhu lomhlahlandlela wokugeleza

Isilinda somhlahlandlela sitholakala ngaphezu kwe-crucible (njengoba kuboniswe kuMfanekiso 1). Enqubweni yokudonsa ngekristalu, umehluko wezinga lokushisa phakathi kwenkundla nangaphandle mkhulu, ikakhulukazi indawo engezansi iseduze kakhulu nezinto ze-silicon ezincibilikisiwe, izinga lokushisa liphezulu kakhulu, futhi ukugqwala komhwamuko we-silicon kubi kakhulu.

Abacwaningi basungula inqubo elula kanye nokumelana okuhle kwe-oxidation ye-tube yomhlahlandlela e-anti-oxidation coating kanye nendlela yokulungiselela. Okokuqala, ungqimba lwe-silicon carbide whisker lwakhuliswa ku-matrix yeshubhu lomhlahlandlela, kwase kulungiswa ungqimba lwangaphandle oluminyene lwe-silicon carbide, ukuze kwakhiwe ungqimba lwenguquko lwe-SiCw phakathi kwe-matrix nongqimba olungaphezulu lwe-silicon carbide. , njengoba kuboniswe kuMfanekiso 3. I-coefficient yokunwetshwa kwe-thermal yayiphakathi kwe-matrix ne-silicon carbide. Inganciphisa ngempumelelo ingcindezi yokushisa ebangelwa ukungafani kwe-coefficient yokwandisa ukushisa.

Ukuhlaziywa kukhombisa ukuthi ngokwanda kokuqukethwe kwe-SiCw, usayizi kanye nenani lemifantu ekwehleni kokumboza kuyancipha. Ngemuva kwe-oxidation engu-10h emoyeni ongu-1100 ℃, izinga lokuncipha kwesisindo sesampula enamathelayo lingu-0.87% ~ 8.87% kuphela, futhi ukumelana ne-oxidation nokumelana nokushaqeka okushisayo kwe-silicon carbide coating kuthuthukiswa kakhulu. Yonke inqubo yokulungiselela iphothulwa ngokuqhubekayo ngokufakwa komhwamuko wamakhemikhali, ukulungiswa kwe-silicon carbide coating kwenziwa lula kakhulu, futhi ukusebenza okuphelele kwawo wonke umlomo kuyaqiniswa.

Abacwaningi bahlongoze indlela yokuqinisa i-matrix kanye nokumbozwa kwendawo ye-graphite guide tube ye-czohr monocrystal silicon. I-silicon carbide slurry etholiwe yayinamekwe ngokulinganayo phezu kweshubhu lomhlahlandlela wegraphite enogqinsi oluyi-30 ~ 50 μm ngokugcotshwa kwebhulashi noma indlela yokufutha, bese ifakwa esithandweni sokushisa esiphezulu sokusabela kwe-in-situ, izinga lokushisa lokusabela. kwaba 1850 ~ 2300 ℃, futhi ukulondolozwa ukushisa kwaba 2~6h. Isendlalelo sangaphandle se-SiC singasetshenziswa kusithando somlilo esingama-24 ku-(60.96 cm) esisodwa sokukhula kwekristalu, futhi izinga lokushisa lokusetshenziswa liyi-1500 ℃, futhi kutholakala ukuthi ayikho impushana eqhekekayo newayo ebusweni besilinda somhlahlandlela wegraphite ngemva kuka-1500h. .

1.3 Isicelo kanye nenqubekelaphambili yocwaningo ku-insulation cylinder

Njengenye yezingxenye ezibalulekile zohlelo lwensimu ye-monocrystalline silicon eshisayo, isilinda sokufaka sisetshenziswa kakhulu ukunciphisa ukulahleka kokushisa nokulawula ukuthambekela kwezinga lokushisa kwemvelo yensimu eshisayo. Njengengxenye esekelayo yongqimba lwangaphakathi lokufakwa kodonga lwesithando somlilo sekristalu eyodwa, ukugqwala kwe-silicon vapor kuholela ekwehleni kwe-slag nokuqhekeka komkhiqizo, okugcina kuholele ekwehlulekeni komkhiqizo.

Ukuze kuthuthukiswe ukumelana nokugqwala kwe-silicon vapor corrosion tube ye-C/C-sic composite insulation tube, abacwaningi bafaka imikhiqizo yeshubhu ye-C/C-sic composite eyinhlanganisela elungisiwe esithandweni somlilo samakhemikhali, futhi balungisa ukunamathela kwe-silicon carbide ecinene. indawo engaphezulu yemikhiqizo yeshubhu yokufaka eyinhlanganisela ye-C/C-sic ngenqubo yokubeka umhwamuko wamakhemikhali. Imiphumela ikhombisa ukuthi, Le nqubo ingavimbela ngempumelelo ukugqwala kwe-carbon fibre kumgogodla we-C/C-sic composite ngomhwamuko we-silicon, futhi ukumelana nokugqwala kwe-silicon vapor kukhuphuka izikhathi ezi-5 kuye kweziyi-10 uma kuqhathaniswa nenhlanganisela ye-carbon/carbon, nempilo yesevisi ye-insulation cylinder kanye nokuphepha kwendawo yensimu eshisayo ithuthukiswa kakhulu.

2. Isiphetho kanye nethemba

Ukufakwa kwe-silicon carbideisetshenziswa kabanzi ezintweni zensimu ye-carbon/carbon thermal ngenxa yokumelana kwayo kahle ne-oxidation ezingeni lokushisa eliphezulu. Ngosayizi okhulayo we-carbon/carbon thermal field materials ezisetshenziswa ekukhiqizweni kwe-silicon ye-monocrystalline, indlela yokuthuthukisa ukufana kwe-silicon carbide coating ebusweni bezinto zasensimini ezishisayo futhi kuthuthukiswe impilo yesevisi ye-carbon/carbon thermal field materials sekuyinkinga ephuthumayo. okumele ixazululwe.

Ngakolunye uhlangothi, ngokuthuthukiswa kwemboni ye-silicon ye-monocrystalline, isidingo se-high-purity carbon/carbon thermal field materials siyanda, futhi ama-SiC nanofibers nawo akhuliswa kuma-carbon fibers angaphakathi ngesikhathi sokuphendula. Isilinganiso sokukhishwa kwesisindo esikhulu kanye namazinga omugqa wokukhipha we-C/ C-ZRC kanye nenhlanganisela ye-C/ C-sic ZrC elungiswe ukuhlolwa ngu-0.32 mg/s kanye no-2.57 μm/s, ngokulandelana. Izilinganiso zokukhishwa kwesisindo nomugqa wezinhlanganisela ze-C/ C-sic -ZrC ziyi- -0.24mg/s kanye no-1.66 μm/s, ngokulandelana. Izinhlanganisela ze-C/C-ZRC nama-SiC nanofibers zinezakhiwo ezingcono zokususa. Kamuva, imiphumela yemithombo yekhabhoni ehlukene ekukhuleni kwama-SiC nanofibers kanye nendlela ye-SiC nanofibers eqinisa izakhiwo ezivuthayo zezinhlanganisela ze-C/ C-ZRC zizofundwa.

Ingxube ehlanganisiwe ye-carbon/carbon composite crucible yalungiselelwa inqubo yokufaka umhwamuko wamakhemikhali kanye nokusabela kwe-in-situ. Ingxube eyinhlanganisela yakhiwe nge-silicon carbide coating (100~300μm), i-silicon coating (10~20μm) kanye ne-silicon nitride coating (50~100μm), engavimbela ngempumelelo ukugqwala kwe-silicon vapour endaweni engaphakathi ye-carbon/carbon composite. crucible. Enqubweni yokukhiqiza, ukulahlekelwa kwe-crucible ehlanganisiwe ye-carbon/carbon composite crucible ngu-0.04 mm ngesithando somlilo ngasinye, futhi impilo yesevisi ingafinyelela izikhathi ezingu-180 zomlilo.