Isicelo nenqubekelaphambili yocwaningo ye-SiC enamathela ku-carbon/carbon thermal field materials for monocrystalline silicon-1

I-Solar photovoltaic power generation isiphenduke imboni yamandla amasha ethembisa kakhulu emhlabeni. Uma kuqhathaniswa ne-polysilicon kanye ne-amorphous silicon amaseli elanga, i-silicon ye-monocrystalline, njenge-photovoltaic power generation material, ine-high photoelectric ukuguqulwa kwe-photoelectric kanye nezinzuzo ezivelele zezohwebo, futhi isibe yisizinda sokukhiqiza amandla elanga le-photovoltaic. I-Czochralski (CZ) ingenye yezindlela eziyinhloko zokulungiselela i-silicon ye-monocrystalline. Ukwakhiwa kwesithando somlilo se-Czochralski monocrystalline kuhlanganisa isistimu yesithando somlilo, isistimu ye-vacuum, isistimu yegesi, isistimu yensimu eshisayo kanye nesistimu yokulawula kagesi. Isistimu yensimu eshisayo ingenye yezimo ezibaluleke kakhulu zokukhula kwe-silicon ye-monocrystalline, futhi ikhwalithi ye-silicon ye-monocrystalline ithinteka ngokuqondile ngokusatshalaliswa kwe-gradient yensimu eshisayo.

Izingxenye zensimu ezishisayo ikakhulukazi zakhiwe ngezinto ze-carbon (izinto ze-graphite nezinto ezihlanganisiwe ze-carbon/carbon), ezihlukaniswe izingxenye ezisekelayo, izingxenye ezisebenzayo, izakhi zokushisa, izingxenye zokuzivikela, izinto zokushisa ezishisayo, njll, ngokusho kwemisebenzi yazo, njenge kuboniswe ku-Figure 1. Njengoba ubukhulu be-silicon ye-monocrystalline buqhubeka nokwanda, izidingo zesayizi zezingxenye zensimu ezishisayo nazo ziyanda. Izinto ezihlanganisiwe zekhabhoni/ikhabhoni ziba ukukhetha kokuqala kwezinto zasensimini ezishisayo ze-silicon ye-monocrystalline ngenxa yokuqina kwayo kobukhulu kanye nezakhiwo ezinhle kakhulu zemishini.

Enqubweni ye-silicon ye-czochralcian monocrystalline, ukuncibilika kwezinto ze-silicon kuzokhiqiza umhwamuko we-silicon kanye ne-silicon encibilikisiwe, okuholela ekugugulekeni kwe-silicification yezinto zensimu ye-carbon/carbon thermal field, kanye nezakhiwo zemishini nempilo yesevisi ye-carbon/carbon thermal field materials are. ethinteke kakhulu. Ngakho-ke, indlela yokunciphisa ukuguguleka kwe-sililicification yezinto zensimu ye-carbon/carbon thermal thermal kanye nokuthuthukisa impilo yabo yesevisi sekube yinto ekhathaza abakhiqizi be-monocrystalline silicon kanye nabakhiqizi be-carbon/carbon thermal field material.Ukufakwa kwe-silicon carbideisibe yisinqumo sokuqala sokuvikela ukumbozwa komhlaba kwe-carbon/carbon thermal field materials ngenxa yokumelana nokushaqeka kwayo okuhle kakhulu nokumelana nokugqoka.

Kuleli phepha, kusukela ku-carbon/carbon thermal field materials ezisetshenziswa ekukhiqizeni i-silicon ye-monocrystalline, izindlela zokulungiselela eziyinhloko, izinzuzo kanye nobubi be-silicon carbide coating ziyethulwa. Ngalesi sisekelo, ukusetshenziswa kanye nenqubekelaphambili yocwaningo ye-silicon carbide enamathela ku-carbon/carbon thermal field materials ibuyekezwa ngokuhambisana nezici ze-carbon/carbon thermal field materials, kanye neziphakamiso nezikhombisi-ndlela zokuthuthukiswa zokuvikela ukumbozwa komhlaba kwe-carbon/carbon thermal field materials. zibekwe phambili.

1 Ukulungiselela ubuchwepheshe bei-silicon carbide coating

1.1 Indlela yokushumeka

Indlela yokushumeka ivame ukusetshenziselwa ukulungisa ukunamathela kwangaphakathi kwe-silicon carbide kuhlelo lwe-C/C-sic composite material. Le ndlela iqala isebenzisa impushana exubile ukusonga into eyinhlanganisela yekhabhoni/ikhabhoni, bese iphatha ukushisa ngezinga elithile lokushisa. Uchungechunge lwezimpendulo eziyinkimbinkimbi ze-physico-chemical zenzeka phakathi kwempushana exutshwe nengaphezulu lesampula ukwenza ukunamathela. Inzuzo yayo ukuthi le nqubo ilula, inqubo eyodwa kuphela engalungisa izinto ezihlanganisiwe ze-matrix eziminyene, ezingena-crack; Ukushintsha kosayizi omncane kusuka ku-preform kuya kumkhiqizo wokugcina; Ifanele noma yisiphi isakhiwo esiqiniswe yi-fiber; I-gradient ethile yokubunjwa ingakhiwa phakathi kokugqoka kanye ne-substrate, ehlanganiswe kahle ne-substrate. Kodwa-ke, kukhona futhi okungalungile, njengokusabela kwamakhemikhali ezingeni lokushisa eliphezulu, elingalimaza ifayibha, kanye nezakhiwo zemishini zokwehla kwe-carbon/carbon matrix. Ukufana kwe-coating kunzima ukulawula, ngenxa yezici ezifana namandla adonsela phansi, okwenza ukugqoka kungalingani.

1.2 Indlela yokuhlanganisa i-slurry

Indlela yokuhlanganisa i-slurry iwukuxuba izinto zokumboza kanye ne-binder ibe yingxube, ibhulashi ngokulinganayo ebusweni be-matrix, ngemva kokoma endaweni engenalutho, isifanekiso esihlanganisiwe sifakwe emanzini okushisa aphezulu, futhi ukunamathela okudingekayo kungatholakala. Izinzuzo ukuthi inqubo ilula futhi kulula ukuyisebenzisa, futhi ukushuba enamathela kulula ukulawula; Okubi ukuthi kukhona amandla okubopha ampofu phakathi kwe-coating kanye ne-substrate, futhi ukumelana nokushaqeka okushisayo kwe-coating kubi, futhi ukufana kokugqoka kuphansi.

1.3 Indlela yokusabela komhwamuko wamakhemikhali

Indlela ye-Chemical vapor reaction(CVR) iyindlela yenqubo ehwamukisa impahla ye-silicon eqinile ibe umhwamuko we-silicon ezingeni lokushisa elithile, bese umhwamuko wesilicon usakazekela ngaphakathi nangaphezulu kwe-matrix, bese usabela ku-situ ne-carbon ku-matrix ukuze ukhiqize. i-silicon carbide. Izinzuzo zayo zihlanganisa isimo esifanayo esithandweni somlilo, izinga lokuphendula elingaguquki kanye nobukhulu bokubekwa kwezinto ezimboziwe yonke indawo; Inqubo ilula futhi kulula ukuyisebenzisa, futhi ukujiya enamathela bungalawulwa ngokushintsha Silicon vapor ingcindezi, isikhathi deposition kanye neminye imingcele. Ububi ukuthi isampula ithintwa kakhulu indawo esithandweni somlilo, futhi umfutho we-silicon vapor esithandweni awukwazi ukufinyelela ukufana okungokomcabango, okuholela ekugqimeni okungalingani kokunamathela.

1.4 Indlela yokubeka umhwamuko wamakhemikhali

I-Chemical vapor deposition (CVD) yinqubo lapho ama-hydrocarbon asetshenziswa khona njengomthombo wegesi kanye nokuhlanzeka okuphezulu kwe-N2/Ar njengegesi ethwala ukwethulwa kwamagesi axubile emshinini wokuphendula umhwamuko wamakhemikhali, futhi ama-hydrocarbon ayabola, ahlanganiswe, ahlakazwe, adsorbed futhi axazululwe ngaphansi. izinga lokushisa elithile kanye nengcindezi yokwenza amafilimu aqinile ebusweni bezinto eziyinhlanganisela yekhabhoni/yekhabhoni. Inzuzo yayo ukuthi ukuminyana nokuhlanzeka kwe-coating kungalawulwa; Ibuye ilungele umsebenzi-isiqephu esinomumo oyinkimbinkimbi; Isakhiwo sekristalu kanye ne-surface morphology yomkhiqizo ingalawulwa ngokulungisa imingcele yokubeka. Okubi ukuthi izinga lokubeka liphansi kakhulu, inqubo iyinkimbinkimbi, izindleko zokukhiqiza ziphezulu, futhi kungase kube khona ukukhubazeka kokumboza, njengokuqhekeka, ukonakala kwemeshi kanye nokonakala kwendawo.

Kafushane, indlela yokushumeka inqunyelwe ezicini zayo zobuchwepheshe, ezifanele ukuthuthukiswa nokukhiqizwa kwelabhorethri kanye nezinto ezinosayizi omncane; Indlela yokumboza ayifanele ukukhiqizwa ngobuningi ngenxa yokungaguquguquki kwayo okungekuhle. Indlela ye-CVR ingahlangabezana nokukhiqizwa ngobuningi bemikhiqizo yosayizi omkhulu, kodwa inezidingo eziphakeme zemishini nobuchwepheshe. Indlela ye-CVD iyindlela ekahle yokulungiselelaI-SIC enamathela, kodwa izindleko zayo ziphakeme kunendlela ye-CVR ngenxa yobunzima bayo ekulawuleni inqubo.