Ukufakwa kwefilimu ezacile kuwukumboza ungqimba lwefilimu ku-substrate eyinhloko ye-semiconductor. Le filimu ingenziwa ngezinto ezihlukahlukene, njenge-insulating compound silicon dioxide, i-semiconductor polysilicon, ithusi lensimbi, njll. Izinto ezisetshenziselwa ukumboza zibizwa ngokuthi imishini yokubeka ifilimu encane.
Ngokombono wenqubo yokukhiqiza i-semiconductor chip, itholakala ekuqaleni kwenqubo.
Inqubo yokulungiselela ifilimu elincanyana ingahlukaniswa izigaba ezimbili ngokuya ngendlela yayo yokwenza ifilimu: i-physical vapor deposition (PVD) kanye ne-chemical vapor deposition.(CVD), lapho impahla yenqubo ye-CVD ibalwa ngengxenye ephezulu.
I-Physical vapor deposition (PVD) isho ukuhwamuka kobuso bomthombo wezinto ezibonakalayo kanye nokubekwa phezu kwe-substrate ngokusebenzisa igesi/i-plasma yokucindezela okuphansi, okuhlanganisa ukuhwamuka, ukuphalaza, i-ion beam, njll.;
Ukufakwa komhwamuko wamakhemikhali (I-CVD) isho inqubo yokufaka ifilimu eqinile phezu kwewafa ye-silicon ngokusabela kwamakhemikhali engxube yegesi. Ngokwezimo zokusabela (ingcindezi, isandulela), ihlukaniswe ingcindezi yasemkhathiniI-CVD(APCVD), ingcindezi ephansiI-CVD(LPCVD), i-plasma ethuthukisiwe i-CVD (PECVD), i-high density plasma CVD (HDPCVD) kanye ne-atomic layer deposition (ALD).
I-LPCVD: I-LPCVD inekhono elingcono lokumboza izinyathelo, ukwakheka okuhle nokulawulwa kwesakhiwo, izinga eliphezulu lokubeka kanye nokuphumayo, futhi yehlisa kakhulu umthombo wokunukubezeka kwezinhlayiyana. Ukuthembela kumshini wokushisa njengomthombo wokushisa ukuze ugcine ukusabela, ukulawulwa kwezinga lokushisa nokucindezela kwegesi kubaluleke kakhulu. Isetshenziswa kakhulu ekukhiqizeni ungqimba lwe-Poly lwamaseli e-TopCon.
I-PECVD: I-PECVD incike ku-plasma ekhiqizwe ukungeniswa kwefrikhwensi yomsakazo ukuze kuzuzwe izinga lokushisa eliphansi (ngaphansi kwamadigri angu-450) wenqubo yokubeka ifilimu encane. Ukubekwa kwezinga lokushisa eliphansi kuyinzuzo yako enkulu, ngaleyo ndlela konga amandla, kunciphisa izindleko, ukwandisa umthamo wokukhiqiza, kanye nokunciphisa ukubola kwempilo yonke yabathwali abambalwa kumawafa e-silicon okubangelwa izinga lokushisa eliphezulu. Ingasetshenziswa ezinqubweni zamaseli ahlukahlukene njenge-PERC, TOPCON, ne-HJT.
I-ALD: Ukufana kwefilimu okuhle, okuminyene futhi ngaphandle kwezimbobo, izici ezinhle zokumboza izinyathelo, kungenziwa ezingeni lokushisa eliphansi (igumbi lokushisa-400 ℃), lingakwazi ukulawula ukushuba kwefilimu kalula nangokunembile, lisebenza kabanzi kuma-substrates amafomu ahlukene, futhi ayidingi ukulawula ukufana kokugeleza kwe-reactant. Kodwa okubi ukuthi ijubane lokwakhiwa kwefilimu lihamba kancane. Okufana nesendlalelo esikhipha ukukhanya kwe-zinc sulfide (ZnS) esisetshenziselwa ukukhiqiza izivikeli ze-nanostructured (Al2O3/TiO2) nezibonisi ze-electroluminescent zefilimu emincane (TFEL).
I-Atomic layer Deposition (ALD) iyinqubo yokumboza i-vacuum eyenza ifilimu elincanyana endaweni engaphansi kwesendlalelo se-substrate ngongqimba ngendlela yongqimba olulodwa lwe-athomu. Kusukela ngo-1974, isazi sefiziksi yezinto ezibonakalayo saseFinnish u-Tuomo Suntola sathuthukisa lobu buchwepheshe futhi sawina umklomelo we-euro wesigidi esingu-1 weMillennium Technology. Ubuchwepheshe be-ALD ekuqaleni babusetshenziselwa ukubonisa i-electroluminescent ye-flat-panel, kodwa abuzange busetshenziswe kabanzi. Kwaze kwaba sekuqaleni kwekhulu lama-21 lapho ubuchwepheshe be-ALD baqala ukwamukelwa yimboni ye-semiconductor. Ngokukhiqiza izinto ezisetshenziswayo ze-ultra-thin high-dielectric ukuze zithathe indawo ye-silicon oxide yendabuko, ixazulule ngempumelelo inkinga yamanje yokuvuza okubangelwa ukuncishiswa kobubanzi bomugqa wama-transistors womphumela wenkundla, okwenze ukuthi uMthetho kaMoore uqhubeke uthuthukela ebubanzini bemigqa emincane. UDkt. Tuomo Suntola wake wathi i-ALD ingakhuphula kakhulu ukuminyana kokuhlanganiswa kwezingxenye.
Idatha yomphakathi ibonisa ukuthi ubuchwepheshe be-ALD basungulwa nguDkt. Tuomo Suntola we-PICOSUN e-Finland ngo-1974 futhi senziwe izimboni phesheya, njengefilimu ye-dielectric ephezulu ku-45/32 nanometer chip eyakhiwe yi-Intel. E-China, izwe lami lethule ubuchwepheshe be-ALD eminyakeni engaphezu kwengu-30 kamuva kunamazwe angaphandle. Ngo-Okthoba 2010, i-PICOSUN e-Finland nase-Fudan University yabamba umhlangano wokuqala wasekhaya wokushintshisana ngezifundo we-ALD, yethula ubuchwepheshe be-ALD e-China okokuqala ngqa.
Uma kuqhathaniswa nokufaka umhwamuko wamakhemikhali wendabuko (I-CVD) kanye ne-physical vapor deposition (PVD), izinzuzo ze-ALD zihambisana kahle kakhulu nezinhlangothi ezintathu, ukufana kwefilimu yendawo enkulu, nokulawula ukujiya okunembayo, afanele ukukhulisa amafilimu anomzimba omncane kakhulu kumajamo angaphezulu ayinkimbinkimbi kanye nezakhiwo ze-aspect ratio ephezulu.
-Umthombo wedatha: I-Micro-nano processing platform yaseTsinghua University—
Esikhathini se-post-Moore, ubunkimbinkimbi kanye nevolumu yenqubo yokwenziwa kwama-wafer kuye kwathuthukiswa kakhulu. Ukuthatha ama-logic chips njengesibonelo, ngokwanda kwenani lemigqa yokukhiqiza enezinqubo ezingaphansi kuka-45nm, ikakhulukazi imigqa yokukhiqiza enezinqubo ezingu-28nm nangaphansi, izidingo zokuqina kokumboza nokulawula ukunemba ziphakeme. Ngemuva kokwethulwa kobuchwepheshe bokuvezwa okuningi, inani lezinyathelo zenqubo ye-ALD kanye nemishini edingekayo iye yanda kakhulu; emkhakheni wama-memory chips, inqubo yokukhiqiza ejwayelekile ishintshile isuka ku-2D NAND yaya ku-3D NAND isakhiwo, inani lezendlalelo zangaphakathi liqhubekile nokukhula, futhi izingxenye ziye zathula kancane kancane izakhiwo eziphakeme kakhulu, izinga eliphezulu, kanye nendima ebalulekile. I-ALD isiqalile ukuvela. Ngokombono wentuthuko yesikhathi esizayo yama-semiconductors, ubuchwepheshe be-ALD buzodlala indima ebaluleke kakhulu esikhathini se-post-Moore.
Isibonelo, i-ALD iwukuphela kobuchwepheshe bokubeka obungakwazi ukuhlangabezana nekhava kanye nezidingo zokusebenza kwefilimu zezakhiwo ezistakiwe ze-3D eziyinkimbinkimbi (ezifana ne-3D-NAND). Lokhu kungabonakala ngokucacile emfanekisweni ongezansi. Ifilimu efakwe ku-CVD A (eluhlaza okwesibhakabhaka) ayifaki ngokuphelele ingxenye engezansi yesakhiwo; ngisho noma ezinye izinguquko zenqubo zenziwe ku-CVD (CVD B) ukuze kuzuzwe ukumbozwa, ukusebenza kwefilimu kanye nokwakheka kwamakhemikhali endaweni engezansi kubi kakhulu (indawo emhlophe esithombeni); ngokuphambene, ukusetshenziswa kobuchwepheshe be-ALD kubonisa ukumbozwa okuphelele kwefilimu, futhi izakhiwo zefilimu ezisezingeni eliphezulu nezifanayo zitholakala kuzo zonke izindawo zesakhiwo.
—-Izinzuzo Zesithombe zobuchwepheshe be-ALD uma ziqhathaniswa ne-CVD (Umthombo: ASM)—-
Yize i-CVD isabambe isabelo semakethe esikhulu kunazo zonke esikhathini esifushane, i-ALD isiphenduke enye yezingxenye ezikhula ngokushesha emakethe yemishini ye-wafer fab. Kule makethe ye-ALD enamandla amakhulu okukhula kanye nendima ebalulekile ekukhiqizeni ama-chip, i-ASM iyinkampani ehamba phambili emkhakheni wemishini ye-ALD.
Isikhathi sokuthumela: Jun-12-2024