Ukubuka konke kwamadiski e-graphite

Isisekelo sokugaya amatshe enziwe nge-SIC sinezici zokumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, i-asidi, i-alkali, usawoti kanye nama-organic reagents, kanye nokusebenza okuzinzile ngokomzimba namakhemikhali. Uma kuqhathaniswa nokuhlanzeka okuphezulu kwe-graphite, i-graphite yokuhlanzeka okuphezulu ku-400 ℃ iqala i-oxidation enamandla, ngisho noma izinga lokushisa lingekho phezulu, ukusetshenziswa kwesikhathi eside kuyoba ngenxa ye-oxidation kanye nempushana, incike ku-workpiece netafula noma ukungcoliswa kokusetshenziswa kwemvelo. , ngakho-ke isisekelo se-SIC yokuhlanganisa i-graphite njengento entsha ye-MOCVD, inqubo ye-powder sintering kancane kancane ithatha indawo ye-graphite yokuhlanzeka okuphezulu.

Izici eziyinhloko:

1. Ukushisa okuphezulu kwe-antioxidant: i-antioxidant, umsebenzi we-antioxidant usemuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 ℃;

2. Ukuhlanzeka okuphezulu: kutholwe ngendlela yokubeka umhwamuko wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination;

3. Ukumelana nokuguguleka: ubulukhuni obukhulu, indawo eminyene, izinhlayiya ezinhle;

Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents;

5. I-SIC surface layer yi-β-silicon carbide, i-cubic egxile ebusweni.

石墨盘


Isikhathi sokuthumela: Feb-20-2023
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