Ukuphishekela kwethu kanye nenhloso yenkampani imvamisa ukuthi “Ukufeza izidingo zomthengi njalo”. Siyaqhubeka nokuthola nokuhlela imikhiqizo ephezulu kakhulu yekhwalithi ephezulu yabo bobabili abathengi bethu bangaphambilini nabasha futhi sithola ithuba lokuwina-wini kumakhasimende ethu njengathi kuMkhiqizi waseChina I-Carbon Graphite Mold Esetshenziselwa Ukupholisha Ukhonkolo, Ukutholakala okuqhubekayo kwezinto ezithengiswayo ezisezingeni eliphakeme. ngokuhambisana nokwesekwa kwethu okuhle kakhulu kwangaphambi nangemuva kokuthengisa kuqinisekisa ukuncintisana okuqinile emakethe eya ngokuya yanda emhlabeni.
Ukuphishekela kwethu kanye nenhloso yenkampani imvamisa ukuthi “Ukufeza izidingo zomthengi njalo”. Siyaqhubeka nokuthola futhi sihlele imikhiqizo ephezulu kakhulu yekhwalithi ephezulu kubo bobabili abathengi bethu bangaphambilini nabasha futhi sithola ithemba lokuwina kumakhasimende ethu njengathiI-China Carbon Graphite Molds, I-Graphite Molds, Igama leNkampani, lihlala liphathelene nekhwalithi njengesisekelo senkampani, ifuna intuthuko ngezinga eliphezulu lokwethembeka , ukuthobela izinga lokuphathwa kwekhwalithi ye-ISO ngokuqinile, kudala inkampani eseqophelweni eliphezulu ngomoya wokwethembeka okumaka inqubekelaphambili nethemba.
Izinhlanganisela zekhabhoni / ikhabhoni(okuzobizwa kamuva ngokuthi “C / C noma CFC”) iwuhlobo lwento eyinhlanganisela esekelwe kukhabhoni futhi iqiniswe yi-carbon fibre kanye nemikhiqizo yayo (i-carbon fibre preform). Inakho kokubili inertia ye-carbon namandla aphezulu e-carbon fiber. Inezici ezinhle zokusebenzisa imishini, ukumelana nokushisa, ukumelana nokugqwala, i-friction damping kanye nezici ze-thermal kanye ne-electrical conductivity.
I-CVD-SiCukugqoka kunezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ye-organic, enezakhiwo ezinzile ngokomzimba namakhemikhali.
Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.
Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.
Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.
Izici eziyinhloko:
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:
| I-SiC-CVD | ||
| Ukuminyana | (g/cc)
| 3.21 |
| Amandla e-Flexural | (Mpa)
| 470 |
| Ukunwetshwa kwe-thermal | (10-6/K) | 4
|
| I-Thermal conductivity | (W/mK) | 300
|
