Sithembela ekucabangeni kwamasu, ukuthuthukiswa okuqhubekayo kuzo zonke izingxenye, intuthuko yezobuchwepheshe kanye nakubasebenzi bethu ababamba iqhaza ngokuqondile empumelelweni yethu Yekhwalithi Enhle yase-China RP HP UHPAma-Graphite Electrodes Okwenza I-Silicon Carbide, Sinomuzwa wokuthi uzojabula ngentengo yethu yokuthengisa ethengekayo, izixazululo zekhwalithi ephezulu kanye nokulethwa ngokushesha. Sithemba ngobuqotho ukuthi ungasinika ithuba lokukunikeza futhi ube umlingani wakho omkhulu!
Sithembele ekucabangeni kwamasu, ukwenza izinto zibe zesimanje njalo kuzo zonke izingxenye, intuthuko yezobuchwepheshe kanye nakubasebenzi bethu ababamba iqhaza ngokuqondile empumelelweni yethu.I-China Graphite Electrode, Ama-Graphite Electrodes Okwenza I-Silicon Carbide, Siphinde sibe nobudlelwano obuhle bokubambisana nabakhiqizi abaningi abahle ukuze sikwazi ukuhlinzeka cishe zonke izingxenye zezimoto kanye nesevisi yangemuva kokuthengisa ngezinga eliphezulu, izinga lentengo eliphansi kanye nenkonzo efudumele ukuhlangabezana nezidingo zamakhasimende avela emikhakheni ehlukene nasezindaweni ezahlukene.

I-CVD-SiC enamathela inezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ephilayo, enezakhiwo ezinzile ngokomzimba namakhemikhali.

Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.

Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:

Ikhono Lokuhlinzeka:

10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:

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