Ifekthri Ethengisa I-China Epholishiwe I-Silicon Carbide Sisic Yokugaya Umgqomo We-Sic Tube Yokugaya

Konke esikwenzayo kuhlale kuhlobene ne-tenet yethu ” Iklayenti kuqala, Yethembela koku-1, sinikele mayelana nokupakishwa kokudla kanye nokuvikelwa kwemvelo Yefektri Ethengisa I-China Epholishiwe I-Silicon Carbide Sisic Yokugaya Umgqomo We-Sic Umshini Wokugaya, Samukela ngokufudumele amathemba, izinhlangano zenhlangano. nabangane abavela yonke indawo emhlabeni ukuze baxhumane nathi futhi bacele ukubambisana ukuze bathole izinzuzo ezifanayo.
Konke esikwenzayo ngaso sonke isikhathi kuhlobene nemfundiso yethu ” Iklayenti kuqala, Yiba nethemba koku-1, unikeze mayelana nokupakishwa kokudla kanye nokuvikelwa kwemveloI-China SAE1026 Honing Tube, I-S45c Honed Tube, Ukukhiqizwa kwethu kuthunyelwe emazweni angaphezu kuka-30 nasezifundeni njengomthombo wokuqala onenani eliphansi. Samukela ngobuqotho amakhasimende asekhaya nakwamanye amazwe ukuthi eze azoxoxisana nathi ngebhizinisi.
Incazelo Yomkhiqizo

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu : okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating