Ukwandisa njalo uhlelo lokuphatha ngenxa yomthetho wakho othi “ozithobayo, ukholo oluhle kanye nekhwalithi kuyisisekelo sokuthuthukiswa kwebhizinisi”, sithatha kakhulu ingqikithi yezixazululo ezihambisanayo emhlabeni wonke, futhi ngokuqhubekayo sakha izixazululo ezintsha zokwanelisa izidingo zamakhasimende Embonini. Izitolo zaseChina 1200c Plasma Enhanced Chemical Vapor DepositionI-PecvdI-Vacuum Funace, Kanye nomgomo waphakade “wokuthuthukiswa okuqhubekayo kwekhwalithi ephezulu, ukwaneliseka kwamakhasimende”, siye saqiniseka ukuthi imikhiqizo yethu ikhwalithi ephezulu izinzile futhi ithembekile futhi izixazululo zethu zithengiswa kakhulu ekhaya lakho naphesheya kwezilwandle.
Ukwandisa njalo uhlelo lokuphatha ngenxa yomthetho wakho othi “ozithobayo, ukholo oluhle kanye nekhwalithi kuyisisekelo sokuthuthukiswa kwebhizinisi”, sithatha kakhulu ingqikithi yezixazululo ezihambisanayo emhlabeni wonke, futhi siqhubeke sakha izixazululo ezintsha zokwanelisa izimfuno zamakhasimendeI-China Plasma Ethuthukisiwe I-Chemical Vapor Deposition, I-Pecvd, Inqubomgomo Yenkampani yethu “iyikhwalithi kuqala, ukuba ngcono futhi ibe namandla, intuthuko eqhubekayo” . Izinjongo zethu “zokuba umphakathi, amakhasimende, abasebenzi, ozakwethu kanye namabhizinisi bafune inzuzo ephusile”. Sifisa ukubambisana nabo bonke abakhiqizi bezingxenye zezimoto abahlukene, isitolo sokulungisa izimoto, intanga yezimoto, bese sidala ikusasa elihle! Siyabonga ngokuzinika isikhathi sokubheka iwebhusayithi yethu futhi singakwamukela noma yiziphi iziphakamiso ongase ube nazo ezingasisiza ukuba sithuthukise isayithi lethu.

I-CVD-SiC enamathela inezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ephilayo, enezakhiwo ezinzile ngokomzimba namakhemikhali.

Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.

Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:

Ikhono Lokuhlinzeka:

10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:

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