Intengo eshibhile yaseChina High Temperature Resistance Molybdenum Graphite Crucible Metal Melting Pot

Incazelo emfushane:


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izinga elihle liza kuqala ngalo; isevisi ihamba phambili; inhlangano ukubambisana” ifilosofi yethu yebhizinisi ehlala ibhekwa futhi ilandelwa inkampani yethu ngamanani ashibhile I-China High Temperature Resistance Molybdenum Graphite Crucible Metal Melting Pot, Ukubona kukholelwa! Siwamukela ngobuqotho amathuba amasha aphesheya okusungula ukusebenzisana kwenkampani futhi silindele ukuhlanganisa ukusebenzelana nawo wonke amakhasimende asenesikhathi eside asungulwa.
Izinga elihle liza kuqala ngalo; isevisi ihamba phambili; inhlangano ukubambisana” kuyifilosofi yethu yebhizinisi ehlala ibonwa futhi ilandelwa inkampani yethuI-China Molybdenum Crucible, Izikhonkwane Ezithengiswayo, Sinikeza isevisi enolwazi, impendulo esheshayo, ukulethwa ngesikhathi, ikhwalithi enhle kakhulu kanye nentengo engcono kakhulu kumakhasimende ethu. Ukwaneliseka kanye nekhredithi enhle kuwo wonke amakhasimende kuyinto ehamba phambili yethu. Sigxila kuyo yonke imininingwane yokucutshungulwa kwe-oda kumakhasimende aze athole imikhiqizo ephephile nezwakalayo enesevisi enhle yezokuthutha kanye nezindleko zokonga. Ngokuya ngalokhu, okuthengiswayo kwethu kudayiswa kahle kakhulu emazweni ase-Afrika, Mid-East kanye naseNingizimu-mpumalanga Asia. Ngokuhambisana nefilosofi yebhizinisi 'yekhasimende kuqala, qhubekela phambili', samukela ngobuqotho amakhasimende asekhaya nakwamanye amazwe ukuba abambisane nathi.

Incazelo Yomkhiqizo

Izinhlanganisela zekhabhoni / ikhabhoni(okuzobizwa kamuva ngokuthi “C / C noma CFC”) iwuhlobo lwento eyinhlanganisela esekelwe kukhabhoni futhi iqiniswe yi-carbon fibre kanye nemikhiqizo yayo (i-carbon fibre preform). Inakho kokubili inertia ye-carbon namandla aphezulu e-carbon fiber. Inezici ezinhle zokusebenzisa imishini, ukumelana nokushisa, ukumelana nokugqwala, i-friction damping kanye nezici ze-thermal kanye ne-electrical conductivity.

I-CVD-SiCukugqoka kunezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ye-organic, enezakhiwo ezinzile ngokomzimba namakhemikhali.

Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.

Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.

 I-SiC coating processing on graphite surface MOCVD susceptors

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

 

Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:

I-SiC-CVD

Ukuminyana

(g/cc)

3.21

Amandla e-Flexural

(Mpa)

470

Ukunwetshwa kwe-thermal

(10-6/K)

4

I-Thermal conductivity

(W/mK)

300

Izithombe ezinemininingwane

I-SiC coating processing on graphite surface MOCVD susceptorsI-SiC coating processing on graphite surface MOCVD susceptorsI-SiC coating processing on graphite surface MOCVD susceptorsI-SiC coating processing on graphite surface MOCVD susceptorsI-SiC coating processing on graphite surface MOCVD susceptors

Ulwazi Lwenkampani

111

Imishini Yezimboni

222

Inqolobane

333

Izitifiketi

Izitifiketi22

 


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