Kutheni iindonga ezisecaleni zigoba ngexesha lokukrola okomileyo?

Non-uniformity of ion bombardment

Yomileetchingngokuqhelekileyo yinkqubo edibanisa iziphumo zomzimba kunye neekhemikhali, apho i-ion bombardment iyindlela ebalulekileyo yokufaka umzimba. Ngexesha leinkqubo etching, i-angle yesiganeko kunye nokuhanjiswa kwamandla kwee-ion kunokungalingani.

Ukuba i-angle yesiganeko se-ion yahlukile kwiindawo ezahlukeneyo kwi-sidewall, i-etching effect ye-ion kwi-sidewall iya kwahluka. Kwiindawo ezineengile ezinkulu ze-ion, impembelelo ye-ion kwi-sidewall yomelele, eya kubangela ukuba i-sidewall kule ndawo ifakwe ngakumbi, ibangela ukuba i-sidewall igobe. Ukongezelela, ukusabalalisa okungafaniyo kwamandla e-ion kuya kuvelisa iziphumo ezifanayo. Ions ezinamandla aphezulu zinokususa izinto ezisebenzayo ngakumbi, okukhokelela ekungahambelanietchingiidigri ze-sidewall kwiindawo ezahlukeneyo, ezibangela ukuba i-sidewall igobe.

Impembelelo ye-photoresist

I-Photoresist idlala indima yemaski kwi-etching eyomileyo, ukukhusela iindawo ezingafuneki ukuba zifakwe. Nangona kunjalo, i-photoresist ikwachatshazelwa yi-plasma bombardment kunye nokuphendula kweekhemikhali ngexesha lenkqubo yokubhala, kwaye ukusebenza kwayo kunokutshintsha.

Ukuba ubukhulu be-photoresist bungalingani, izinga lokusetyenziswa ngexesha lenkqubo yokudibanisa ayihambelani, okanye ukunamathela phakathi kwe-photoresist kunye ne-substrate kuyahluka kwiindawo ezahlukeneyo, kunokukhokelela ekukhuselweni okungalinganiyo kwee-sidewalls ngexesha lenkqubo yokubhala. Umzekelo, iindawo ezine-photoresist ezibhityileyo okanye ukuncamathela okubuthathaka kunokwenza izinto ezingaphantsi ziqalwe lula, zibangele ukuba amacandle agobe kwezi ndawo.

Umahluko kwiipropati zezinto ze-substrate

Isixhobo se-substrate esixhonyiweyo ngokwaso sinokuba neepropati ezahlukeneyo, ezifana nokuqhelaniswa nekristale eyahlukileyo kunye nokugxilwa kwe-doping kwimimandla eyahlukeneyo. Lo mahluko uya kuchaphazela izinga lokubetha kunye nokukhethwa kwe-etching.
Umzekelo, kwi-crystalline silicon, ukucwangciswa kweeathom ze-silicon kwiindlela ezahlukeneyo zekristale zahlukile, kwaye ukuphinda kusebenze kunye nesantya sokudibanisa kunye nerhasi ye-etching kuya kwahluka. Ngexesha lenkqubo ye-etching, iireyithi zokutsala ezahlukeneyo ezibangelwa yiyantlukwano kwiipropathi zezinto eziphathekayo ziya kwenza ubunzulu be-etching of the sidewalls kwiindawo ezahlukeneyo zingahambelani, ekugqibeleni zikhokelela ekugobeni kwe-sidewall.

Izinto ezinxulumene nezixhobo

Ukusebenza kunye nesimo sezixhobo zokutsala nazo zinefuthe elibalulekileyo kwiziphumo zokudibanisa. Umzekelo, iingxaki ezinjengokusasazwa kweplasma engalinganiyo kwigumbi lokuphendula kunye nokunxitywa kwe-electrode engalinganiyo kunokukhokelela ekusasazweni okungalinganiyo kweeparamitha ezinje ngoxinaniso lwe-ion kunye namandla kumphezulu we-wafer ngexesha le-etching.

Ukongeza, ulawulo lobushushu obungalinganiyo lwesixhobo kunye nokuguquguquka okuncinci kokuhamba kwerhasi kunokuchaphazela ukufana kwe-etching, ekhokelela ekugobeni kwe-sidewall.