Iziko lokukhula kwekristale sesona sixhobo singundoqoi-silicon carbideukukhula kwekristale. Iyafana neziko lokukhula kwekristale lesilicon yenqanaba lekristale. Isakhiwo sesithando somlilo asinzima kakhulu. Ikakhulu iqulunqwe ngumzimba wesithando somlilo, inkqubo yokufudumeza, indlela yokuhambisa ikhoyili, ukufunyanwa kwevacuum kunye nenkqubo yokulinganisa, inkqubo yendlela yegesi, inkqubo yokupholisa, inkqubo yokulawula, njl. njl.ikristale ye-silicon carbidenjengomgangatho, ubungakanani, conductivity njalo njalo.
Kwelinye icala, iqondo lobushushu ngexesha lokukhulaikristale ye-silicon carbideiphezulu kakhulu kwaye ayinakujongwa. Ngoko ke, ubunzima obuphambili bulele kwinkqubo ngokwayo. Obona bunzima buphambili bulandelayo:
(1) Ubunzima kulawulo lwentsimi ye-thermal:
Ukubekwa esweni kwendawo evaliweyo yobushushu obuphezulu kunzima kwaye akulawuleki. Ngokwahlukileyo kwisisombululo esisekwe kwi-silicon esekelwe ngokuthe ngqo kwisixhobo sokukhula kwekristale kunye nenqanaba eliphezulu lokuzisebenzela kunye nenkqubo yokukhula kwekristale ebonakalayo kunye nokulawulwayo, iikristale zesilicon carbide zikhula kwindawo evaliweyo kwindawo enobushushu obuphezulu ngaphezulu kwe-2,000 ℃, kunye nobushushu bokukhula. idinga ukulawulwa ngokuchanekileyo ngexesha lokuvelisa, okwenza kube nzima ukulawula ubushushu;
(2) Ubunzima kulawulo lwefom yekristale:
I-Micropipes, i-polymorphic inclusions, i-dislocations kunye nezinye iziphene zivame ukwenzeka ngexesha lokukhula, kwaye zichaphazela kwaye ziguquke. Imibhobho emibhobho (MP) ziziphene ezinobungakanani beemicrons ezininzi ukuya kumashumi eemicrons, eziziziphene ezibulalayo kwizixhobo. I-silicon carbide i-crystals enye iquka ngaphezu kwe-200 iifom ze-crystal ezahlukeneyo, kodwa kuphela izakhiwo ezimbalwa ze-crystal (uhlobo lwe-4H) zizinto ze-semiconductor ezifunekayo kwimveliso. Ukuguqulwa kwefom ye-Crystal kulula ukwenzeka ngexesha lenkqubo yokukhula, okukhokelela kwiziphene zokubandakanywa kwe-polymorphic. Ke ngoko, kuyafuneka ukulawula ngokuchanekileyo iiparamitha ezinje ngesilicon-carbon ratio, ukukhula kweqondo lobushushu, izinga lokukhula kwekristale, kunye noxinzelelo lokuhamba komoya. Ukongeza, kukho iqondo lobushushu kwindawo eshushu ye-silicon carbide ukukhula kwekristale enye, okukhokelela kuxinzelelo lwangaphakathi lwangaphakathi kunye nokukhutshwa okubangelwayo (i-basal plane dislocation BPD, screw dislocation TSD, edge dislocation TED) ngexesha lenkqubo yokukhula kwekristale, ngaloo ndlela. echaphazela umgangatho kunye nokusebenza kwe-epitaxy elandelayo kunye nezixhobo.
(3) Ulawulo lwedoping olunzima:
Ukuqaliswa kokungcola kwangaphandle kufuneka kulawulwe ngokungqongqo ukufumana i-crystal conductive kunye ne-doping ye-directional;
(4) Izinga lokukhula okucothayo:
Izinga lokukhula kwesilicon carbide licotha kakhulu. Izinto ze-silicon zemveli zifuna kuphela iintsuku ezi-3 ukuze zikhule zibe yintonga ye-crystal, ngelixa i-silicon carbide crystal rods idinga iintsuku ezi-7. Oku kukhokelela ekusebenzeni okusezantsi kwemveliso yesilicon carbide kunye nemveliso encinci kakhulu.
Ngakolunye uhlangothi, iiparamitha ze-silicon carbide epitaxial ukukhula zifuna kakhulu, kubandakanywa ukuqina komoya kwezixhobo, ukuzinza koxinzelelo lwegesi kwigumbi lokuphendula, ulawulo oluchanekileyo lwexesha lokungenisa igesi, ukuchaneka kwegesi. umlinganiselo, kunye nolawulo olungqongqo lobushushu bokubeka. Ngokukodwa, ngokuphuculwa kwenqanaba lokumelana nombane wesixhobo, ubunzima bokulawula iiparamitha eziphambili ze-epitaxial wafer buye landa kakhulu. Ukongezelela, ngokunyuka kobunzima be-epitaxial layer, indlela yokulawula ukufana kwe-resistantivity kunye nokunciphisa ubuninzi besiphako ngelixa uqinisekisa ukuba ubukhulu bube ngomnye umngeni omkhulu. Kwinkqubo yokulawula umbane, kuyimfuneko ukudibanisa i-high-precision sensors kunye ne-actuators ukuqinisekisa ukuba iiparitha ezahlukeneyo zinokuchaneka kwaye zilawulwe ngokuzinzileyo. Kwangaxeshanye, ukwenziwa ngcono kwe-algorithm yolawulo nako kubalulekile. Idinga ukukwazi ukulungelelanisa isicwangciso sokulawula ngexesha langempela ngokuhambelana nomqondiso wempendulo ukulungelelanisa utshintsho oluhlukeneyo kwinkqubo yokukhula kwe-silicon carbide epitaxial.
Ubunzima obuphambili kwii-silicon carbide substrateukuvelisa:
Ixesha lokuposa: Jun-07-2024