Yeyiphi imiqobo yobugcisa kwi-silicon carbide?

Isizukulwana sokuqala sezinto ze-semiconductor simelwe yi-silicon yendabuko (Si) kunye ne-germanium (Ge), eyona siseko sokwenziwa kweesekethe ezidibeneyo. Zisetyenziswa ngokubanzi kwi-low-voltage, low-frequency, kunye ne-low-power transistors kunye ne-detectors. Ngaphezulu kwe-90% yeemveliso ze-semiconductor Zenziwe ngezinto ezisekelwe kwi-silicon;
Izinto ze-semiconductor zesizukulwana sesibini zimelwe yi-gallium arsenide (GaAs), i-indium phosphide (InP) kunye ne-gallium phosphide (GaP). Xa kuthelekiswa nezixhobo ezisekelwe kwi-silicon, zinezixhobo eziphezulu ze-optoelectronic kunye ne-high-speed optoelectronic kwaye zisetyenziswa ngokubanzi kwiinkalo ze-optoelectronics kunye ne-microelectronics. ;
Isizukulwana sesithathu sezinto ze-semiconductor zimelelwe ngezinto ezikhulayo ezifana ne-silicon carbide (SiC), i-gallium nitride (GaN), i-zinc oxide (ZnO), idayimane (C), kunye ne-aluminium nitride (AlN).

I-silicon carbidesisixhobo esisisiseko esibalulekileyo kuphuhliso lweshishini le-semiconductor lesizukulwana sesithathu. Izixhobo zamandla ze-silicon carbide zinokuhlangabezana ngokufanelekileyo nokusebenza okuphezulu, i-miniaturization kunye neemfuno ezikhaphukhaphu zeenkqubo zombane zamandla kunye nokumelana kwazo okuphezulu kwe-voltage, ukumelana nobushushu obuphezulu, ilahleko ephantsi kunye nezinye iipropathi.

Ngenxa yeepropathi zayo eziphezulu zomzimba: i-gap ephezulu yebhendi (ehambelana nokuqhekeka okuphezulu kwebala lombane kunye noxinano lwamandla aphezulu), ukuhanjiswa kombane okuphezulu, kunye ne-thermal conductivity ephezulu, kulindeleke ukuba ibe yeyona nto isetyenziswa kakhulu kwisiseko sokwenza iitshiphusi ze-semiconductor kwixesha elizayo. . Ngokukodwa kwimimandla yezithuthi zamandla amatsha, ukuveliswa kwamandla e-photovoltaic, ukuhamba ngomzila kaloliwe, iigridi ezihlakaniphile kunye nezinye iindawo, zineenzuzo ezicacileyo.

Inkqubo yemveliso yeSiC yahlulwe yangamanyathelo amathathu amakhulu: Ukukhula kwekristale enye ye-SiC, ukukhula kwe-epitaxial layer kunye nokuveliswa kwesixhobo, esihambelana namakhonkco amane amakhulu ekhonkco leshishini:isubstrate, i-epitaxy, izixhobo kunye neemodyuli.

Indlela eqhelekileyo yokuvelisa ama-substrates kuqala isebenzisa indlela yokuthotywa komphunga womzimba ukuthoba umgubo kwindawo yokufunxa yobushushu obuphezulu, kunye nokukhulisa iikristale zesilicon carbide kumphezulu wekristale yembewu ngolawulo lwendawo yobushushu. Ukusebenzisa i-silicon carbide wafer njenge-substrate, i-chemical vapor deposition isetyenziselwa ukufaka umaleko wekristale enye kwi-wafer ukwenza i-epitaxial wafer. Phakathi kwabo, ukukhulisa i-silicon carbide epitaxial layer kwi-conductive silicon carbide substrate inokwenziwa kwizixhobo zamandla, ezisetyenziswa kakhulu kwizithuthi zombane, i-photovoltaics kunye nezinye iindawo; ukukhulisa i-gallium nitride epitaxial layer kwi-semi-insulatingi-silicon carbide substrateinokwenziwa ngakumbi kwizixhobo zamaza erediyo, ezisetyenziswa kunxibelelwano lwe-5G kunye namanye amacandelo.

Okwangoku, i-silicon carbide substrates inezona zithintelo zobugcisa eziphezulu kwikhonkco le-silicon carbide, kunye ne-silicon carbide substrates zezona zinzima kakhulu ukuvelisa.

I-bottleneck yemveliso ye-SiC ayizange isombululwe ngokupheleleyo, kwaye umgangatho weentsika ze-crystal yezinto eziluhlaza awuzinzile kwaye kukho ingxaki yesivuno, ekhokelela kwiindleko eziphezulu zezixhobo ze-SiC. Kuthatha kuphela umndilili weentsuku ezi-3 ukuba izinto ze-silicon zikhule zibe yintonga yekristale, kodwa kuthatha iveki intonga ye-silicon carbide crystal. Intonga eqhelekileyo ye-silicon crystal inokukhula ubude be-200cm, kodwa intonga ye-silicon carbide crystal inokukhula kuphela nge-2cm ubude. Ngaphaya koko, iSiC ngokwayo sisixhobo esiqinileyo esinobunkunkqele, kwaye ii-wafers ezenziwe ngayo ziqhelekile ukuba zitshiphuke xa zisebenzisa i-wafer dicing, echaphazela imveliso kunye nokuthembeka. Ii-substrates ze-SiC zahluke kakhulu kwii-ingots ze-silicon, kwaye yonke into esuka kwizixhobo, iinkqubo, ukusetyenzwa ukuya ekusikeni kufuneka kuphuhliswe ukuphatha i-silicon carbide.

I-silicon carbide industry chain ihlulwe kakhulu ibe ngamakhonkco amane amakhulu: i-substrate, i-epitaxy, izixhobo kunye nezicelo. Izinto ze-Substrate zisisiseko sekhonkco loshishino, izinto ze-epitaxial zingundoqo kwimveliso yesixhobo, izixhobo zingundoqo wekhonkco loshishino, kwaye izicelo ziqhuba uphuhliso lwamashishini. Ushishino oluphezulu lusebenzisa imathiriyeli ekrwada ukwenza imathiriyeli ye-substrate ngokusebenzisa iindlela zokunciphisa umphunga womzimba kunye nezinye iindlela, kwaye emva koko isebenzisa iindlela zokubeka umphunga wekhemikhali kunye nezinye iindlela zokukhulisa imathiriyeli ye-epitaxial. Ushishino oluphakathi lusebenzisa izixhobo ezinyukayo ukwenza izixhobo zerediyo, izixhobo zombane kunye nezinye izixhobo, ezithi ekugqibeleni zisetyenziswe kunxibelelwano lwe-5G esezantsi. , izithuthi zombane, ukuhamba koololiwe, njl njl. Phakathi kwabo, i-substrate kunye ne-epitaxy i-akhawunti ye-60% yeendleko ze-chain chain chain kunye nexabiso eliphambili le-industry chain chain.

I-substrate ye-SiC: Iikristale ze-SiC zihlala zenziwe kusetyenziswa indlela ye-Lely. Iimveliso eziqhelekileyo zamazwe ngamazwe zitshintsha ukusuka kwi-intshi ezi-4 ukuya kwii-intshi ezi-6, kunye ne-8-intshi yeemveliso ze-conductive substrate ziye zaphuhliswa. Ii-substrates zasekhaya zizii-intshi ezi-4. Ekubeni imigca yemveliso ye-silicon ekhoyo ye-6-intshi ekhoyo inokuphuculwa kwaye iguqulwe ukuze ivelise izixhobo ze-SiC, isabelo semarike esiphezulu se-6-intshi ye-SiC substrates iya kugcinwa ixesha elide.

Inkqubo ye-silicon carbide substrate inzima kwaye inzima ukuyivelisa. I-Silicon carbide substrate yi-compound semiconductor enye crystal imathiriyeli eyenziwe ngezinto ezimbini: ikhabhoni kunye nesilicon. Okwangoku, ishishini ikakhulu lisebenzisa i-high-purity carbon powder kunye ne-high-purity silicon powder njengezinto eziluhlaza ukwenza i-silicon carbide powder. Ngaphantsi kwentsimi yobushushu obukhethekileyo, indlela yokuhambisa umphunga womzimba ovuthiweyo (indlela ye-PVT) isetyenziselwa ukukhulisa i-silicon carbide yobukhulu obahlukeneyo kwisithando somlilo sekristale. I-crystal ingot ekugqibeleni icutshungulwa, inqunyulwe, iphantsi, iphuculwe, icocwe kunye nezinye iinkqubo ezininzi ukuvelisa i-silicon carbide substrate.