Imizuzu emithathu yokufunda malunga nesilicon carbide (SIC)

Intshayelelo yeIsilicon Carbide

I-Silicon carbide (SIC) inobuninzi be-3.2g / cm3. I-silicon carbide yendalo inqabile kakhulu kwaye yenziwa ikakhulu ngendlela eyenziweyo. Ngokokwahlula okuhlukeneyo kwesakhiwo se-crystal, i-silicon carbide inokwahlulwa ibe ngamacandelo amabini: α SiC kunye ne-β SiC. I-semiconductor yesizukulwana sesithathu emelwe yi-silicon carbide (SIC) ine-frequency ephezulu, ukusebenza kakuhle, amandla aphezulu, ukumelana noxinzelelo oluphezulu, ukumelana nobushushu obuphezulu kunye nokuxhathisa okunamandla kwi-radiation. Ifanelekile kwiimfuno eziphambili zeqhinga logcino lwamandla kunye nokunciphisa ukukhutshwa, ukuveliswa okukrelekrele kunye nokhuseleko lolwazi. Kukuxhasa ukutsha okuzimeleyo kunye nophuhliso kunye notshintsho lwesizukulwana esitsha sonxibelelwano oluhambahambayo, izithuthi zamandla amatsha, oololiwe abahamba ngesantya esiphezulu, i-Intanethi yamandla kunye namanye amashishini Izinto eziphambili eziphuculweyo kunye namacandelo e-elektroniki ziye zaba yingqwalasela yetekhnoloji ye-semiconductor yehlabathi kunye nokhuphiswano lweshishini. . Ngo-2020, ipateni yezoqoqosho kunye norhwebo lwehlabathi ikwixesha lohlengahlengiso, kwaye imeko yangaphakathi nengaphandle yoqoqosho lwaseTshayina intsonkothile kwaye iqatha, kodwa ishishini le-semiconductor lesizukulwana sesithathu liyakhula ngokuchasene nomkhwa. Kufuneka kuqatshelwe ukuba ishishini le-silicon carbide lingene kwinqanaba elitsha lophuhliso.

I-silicon carbideisicelo

Ukusetyenziswa kweSilicon carbide kushishino lwesemiconductor isilicon carbide semiconductor industry chain ikakhulu ibandakanya isilicon carbide high purity powder, single crystal substrate, epitaxial, isixhobo samandla, ukupakishwa kwemodyuli kunye nosetyenziso lweterminal, njl.

1. I-crystal substrate enye yinto yokuxhasa, izinto eziphathekayo kunye ne-epitaxial ukukhula substrate ye-semiconductor. Okwangoku, iindlela zokukhula kwe-crystal ye-SiC enye ziquka ukuhanjiswa kwegesi yomzimba (PVT), isigaba se-liquid (LPE), ubushushu obuphezulu bekhemikhali yokubeka umphunga (htcvd) njalo njalo. 2. I-epitaxial silicon carbide epitaxial sheet ibhekisela ekukhuleni kwefilimu enye ye-crystal (i-epitaxial layer) kunye neemfuno ezithile kunye nokuqhelaniswa okufanayo njenge-substrate. Kwisicelo esisebenzayo, i-wide band gap semiconductor izixhobo ziphantse zonke zikumaleko we-epitaxial, kwaye iitshiphusi zesilicon carbide ngokwazo zisetyenziswa kuphela njengama-substrates, kubandakanya i-Gan epitaxial layers.

3. ubunyulu obuphezuluSiCumgubo yinto ekrwada yokukhula kwesilicon carbide crystal enye ngendlela yePVT. Ukucoceka kwayo kwemveliso kuchaphazela ngokuthe ngqo umgangatho wokukhula kunye neempawu zombane ze-SiC crystal eyodwa.

4. isixhobo samandla senziwe nge-silicon carbide, eneempawu zokumelana nokushisa okuphezulu, ukuphindaphinda okuphezulu kunye nokusebenza okuphezulu. Ngokwendlela yokusebenza yesixhobo,SiCizixhobo zamandla ikakhulu ziquka iidiode zamandla kunye neityhubhu zokutshintsha amandla.

5. kwisicelo se-semiconductor yesizukulwana sesithathu, inzuzo yesicelo sokugqibela kukuba banokuncedisa i-semiconductor ye-GaN. Ngenxa yeenzuzo zokusebenza okuphezulu kokuguqulwa, iimpawu eziphantsi zokufudumeza kunye nokukhanya kwezixhobo ze-SiC, imfuno yoshishino olusezantsi luyaqhubeka nokunyuka, olunomkhuba wokutshintsha izixhobo ze-SiO2. Imeko yangoku yophuhliso lwemarike ye-silicon carbide ikhula ngokuqhubekayo. ISilicon carbide ikhokelela kwisizukulwana sesithathu sophuhliso lwesicelo semiconductor yentengiso. Iimveliso ze-semiconductor zesizukulwana sesithathu ziye zangeniswa ngokukhawuleza, imimandla yesicelo iyanda ngokuqhubekayo, kwaye imarike ikhula ngokukhawuleza ngophuhliso lwe-automobile electronics, unxibelelwano lwe-5g, ukunikezelwa kombane okukhawulezayo kunye nesicelo somkhosi. .