I-Thermal Oxidation yeSilicon yeCrystal enye

Ukwenziwa kwesilicon dioxide kumphezulu wesilicon kubizwa ngokuba yi-oxidation, kunye nokudalwa kwesilicon dioxide ezinzileyo kunye nebambelela ngokuqinileyo kukhokelela ekuzalweni kwe-silicon edibeneyo yeteknoloji yeplani yesekethe. Nangona kukho iindlela ezininzi zokukhulisa i-silicon dioxide ngokuthe ngqo kumphezulu we-silicon, ngokuqhelekileyo yenziwa yi-oxidation ye-thermal, ebonisa i-silicon kwindawo yokushisa ephezulu ye-oxidizing (ioksijini, amanzi). Iindlela ze-Thermal oxidation zinokulawula ubukhulu befilimu kunye ne-silicon / i-silicon dioxide interface yeempawu ngexesha lokulungiswa kweefilimu ze-silicon dioxide. Ezinye iindlela zokukhulisa i-silicon dioxide yi-plasma anodization kunye ne-anodization emanzi, kodwa akukho nanye kwezi ndlela isetyenziswe ngokubanzi kwiinkqubo ze-VLSI.

I-silicon ibonisa ukuthambekela ekwenzeni i-silicon dioxide ezinzileyo. Ukuba i-silicon esandula ukucandwa ibonakaliswe kwindawo ene-oxidizing (efana neoksijini, amanzi), iya kwenza umaleko we-oxide obhityileyo kakhulu (<20Å) nakwiqondo lobushushu begumbi. Xa i-silicon ibonakaliswe kwindawo ene-oxidizing kwiqondo lokushisa eliphezulu, umaleko we-oxide ojiyileyo uya kuveliswa ngesantya esikhawulezayo. Indlela esisiseko yokwenziwa kwe-silicon dioxide evela kwi-silicon iqondwa kakuhle. UDeal kunye noGrove baphuhlise imodeli yemathematika echaza ngokuchanekileyo amandla okukhula kweefilimu zeoxide ezityebileyo kune-300Å. Bacebise ukuba i-oxidation iqhutywe ngale ndlela ilandelayo, oko kukuthi, i-oxidant (i-molecule zamanzi kunye ne-oksijini ye-oksijini) isasazeka kwi-oxide ekhoyo kwi-interface ye-Si / SiO2, apho i-oxidant isabela nge-silicon ukwenza i-silicon dioxide. Ukusabela okuphambili kwi-silicon dioxide kuchazwa ngolu hlobo lulandelayo:

Ukusabela kwe-oxidation kwenzeka kwi-interface ye-Si / SiO2, ngoko ke xa umaleko we-oxide ukhula, i-silicon isetyenziswa ngokuqhubekayo kwaye i-interface ingena ngokuthe ngcembe i-silicon. Ngokobuninzi obuhambelanayo kunye nobunzima bemolekyuli ye-silicon kunye ne-silicon dioxide, kunokufunyanwa ukuba i-silicon esetyenzisiweyo ngenxa yobunzima bomgangatho wokugqibela we-oxide yi-44%. Ngale ndlela, ukuba i-oxide layer ikhula i-10,000Å, i-4400Å ye-silicon iya kusetyenziswa. Olu lwalamano lubalulekile ekubaleni ukuphakama kwamanyathelo akhiwe kwiilitye le-silicon. Amanyathelo sisiphumo samazinga ahlukeneyo e-oxidation kwiindawo ezahlukeneyo kumphezulu we-silicon wafer.

Sikwabonelela ngeemveliso zegraphite ezicoceke kakhulu kunye nesilicon carbide, ezisetyenziswa ngokubanzi ekusetyenzweni kwe-wafer njenge-oxidation, i-diffusion, kunye ne-annealing.

Wamkelekile nabaphi na abathengi abavela kwihlabathi liphela ukuba basindwendwele kwingxoxo eyongezelelekileyo!

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