Thetha malunga netekhnoloji yokuphendula i-silicon carbide processing

I-silicon carbide porcelain ye-Reaction-sintered inamandla afanelekileyo okucinezela kubushushu bendawo, ukumelana nobushushu kwi-oxidation yomoya, ukumelana nokunxiba kakuhle, ukumelana nobushushu, i-coefficient encinci yokwandiswa komgca, i-coefficient yokudlulisa ubushushu obuphezulu, ubulukhuni obuphezulu, ukumelana nobushushu kunye nokutshabalalisa, ukuthintela umlilo kunye ezinye iimpawu ezikumgangatho ophezulu. Isetyenziswa kakhulu kwizithuthi, i-automation yoomatshini, ukhuseleko lwendalo esingqongileyo, ubunjineli be-aerospace, umxholo wolwazi lwezixhobo zombane, amandla ombane kunye neminye imimandla, iye yaba yi-ceramics yesakhiwo engabizi kakhulu kwaye engenakubuyiselwa kwiindawo ezininzi zoshishino.

I-Sintering engenaxinzelelo yaziwa njengendlela ethembisayo ye-SiC yokubala. Kumatshini wokuphosa oqhubekayo ohlukeneyo, i-sintering yasimahla inokohlulwa ibe yinqanaba eliqinileyo lokubala kunye nokusebenza okuphezulu kwesigaba solwelo sokubala. Ngokudibanisa i-B kunye ne-C efanelekileyo (umxholo we-oksijeni ongaphantsi kwe-2%) kunye kunye ne-Beta SiC powder enhle kakhulu, i-S. Proehazka ifakwe kwi-SIC calcined body kunye nobuninzi obunxulumene ne-98% kwi-2020, kunye ne-Al2O3 kunye ne-Y2O3 njenge izongezo. I-Calcined 0.5m-SiC phantsi kwe-1850-1950 (i-particle surface kunye ne-SiO2 encinane), isiphelo kukuba ubuninzi be-porcelain ye-SiC budlula i-95% yobuninzi be-theory, ubukhulu bengqolowa buncinci, kunye nobukhulu obuphakathi bukhulu, obunye. yi 1.5μm.

I-reactive sintering silicon carbide ibhekiselele kuyo yonke inkqubo yokubonakalisa i-billet ye-porous structure kunye nesigaba solwelo okanye isigaba solwelo esisebenza kakhulu, ukuphucula umgangatho we-billet, ukunciphisa umngxuma wokukhupha, kunye nokubala imveliso egqityiweyo ngamandla athile kunye nokuchaneka kobukhulu. I-Plutonium-sic powder kunye ne-graphite ecocekileyo ephezulu ixutywe kumlinganiselo othile kwaye ifudunyezwe malunga ne-1650 ukuvelisa iinwele ze-embryo. Ngelo xesha, ingena okanye ingene kwintsimbi ngesigaba se-liquid Si, ibonakalisa nge-silicon carbide ukwenza i-plutonium-sic, kunye ne-fuses kunye ne-plutonium-sic particles ekhoyo. Emva kokungeniswa kwe-Si, umzimba owenziwe nge-sintered oneenkcukacha zoxinaniso kunye nobukhulu obungapakishwanga unokufumaneka. Xa kuthelekiswa nezinye iindlela sintering, kwinkqubo yoxinaniso eliphezulu reaction sintering ubungakanani inguqu incinane ngokwentelekiso, kunokudala ubungakanani obuchanekileyo impahla, kodwa kukho iSiC eninzi emzimbeni calcined, iimpawu ubushushu obuphezulu reaction sintered SiC porcelain. kuya kuba kubi. Non-uxinzelelo calcined SiC iiseramikhi, isostatic calcined SiC iiseramikhi kunye reaction sintered SiC iiseramikhi zineempawu ezahlukeneyo.

Abavelisi be-silicon carbide abasebenzayo abasebenzayo: Umzekelo, i-SiC porcelain kwinqanaba loxinaniso olubaliweyo kunye namandla okugoba, ukucofa okushushu kwe-sintering kunye ne-isostatic pressing calcination zingaphezulu, kwaye i-reactive sintering SiC iphantsi. Ngexesha elifanayo, iipropati ezibonakalayo ze-SiC porcelain zitshintsha kunye nokutshintshwa kwe-calcination modifier. I-non-pressure sintering, i-hot press sintering kunye ne-reaction sintering ye-SiC porcelain inokumelana ne-alkaline elungileyo kunye nokumelana ne-asidi, kodwa i-reaction sintered SiC porcelain inokumelana buthathaka kwi-HF kunye nezinye i-asidi enamandla kakhulu. Xa iqondo lobushushu lendawo lingaphantsi kwama-900, amandla okugoba uninzi lweSiC porcelain aphezulu kakhulu kunobushushu obuphezulu beporcelain ene-sintered, kwaye amandla okugoba eporcelain esebenzayo yeSiC ehlayo yehla kabukhali xa idlula i-1400. (Oku kubangelwa yiqubuliso ukuthoba amandla okugoba isixa esithile seglasi elaminethiweyo Si ngaphaya kobushushu obuthile kumzimba owenziwe calcined Ubushushu obuphezulu bokusebenza kweeseramikhi zeSiC i-sintered ngaphandle koxinzelelo lwe-calcination kwaye phantsi koxinzelelo lwe-static oluqhubekayo olushushu luchatshazelwa ikakhulu ziindidi zezongezo.