Izinto zeSilicon carbide kunye neempawu zayo

Isixhobo seSemiconductor ngundoqo wezixhobo zoomatshini zanamhlanje, ezisetyenziswa kakhulu kwiikhompyuter, i-elektroniki yabathengi, unxibelelwano lwenethiwekhi, i-elektroniki yeemoto, kunye nezinye iindawo eziphambili, ishishini le-semiconductor liqulunqwe ikakhulu ngamacandelo amane asisiseko: iisekethe ezidibeneyo, izixhobo ze-optoelectronic, isixhobo esicacileyo, isivamvo, esibalelwa ngaphezulu kwe-80% yeesekethe ezidibeneyo, rhoqo kunye ne-semiconductor kunye nesekethe edibeneyo elinganayo.

Isekethe edibeneyo, ngokwecandelo lemveliso yahlulwe kakhulu ngokweendidi ezine: i-microprocessor, imemori, izixhobo ezinengqondo, iinxalenye ze-simulator. Nangona kunjalo, kunye nokwandiswa okuqhubekayo kwentsimi yesicelo sezixhobo ze-semiconductor, amaxesha amaninzi akhethekileyo afuna ukuba i-semiconductors ikwazi ukuthobela ukusetyenziswa kobushushu obuphezulu, i-radiation enamandla, amandla aphezulu kunye nezinye iindawo, zingonakalisi, isizukulwana sokuqala nesesibini. izixhobo ze-semiconductor azinamandla, ngoko ke isizukulwana sesithathu sezinto ze-semiconductor savela.

Okwangoku, i-wide band gap semiconductor imathiriyeli emelwe yii-silicon carbide(SiC), i-gallium nitride (i-GaN), i-zinc oxide (i-ZnO), idayimani, i-aluminium nitride (i-AlN) ithatha imarike ebalaseleyo kunye neenzuzo ezinkulu, ngokudibeneyo ezibizwa ngokuba zizixhobo ze-semiconductor zesizukulwana sesithathu. Isizukulwana sesithathu semathiriyeli ye-semiconductor kunye nobubanzi be-gap band ebanzi, ukuphakama kwebala lombane lokuphuka, ukuqhutyelwa kwe-thermal, izinga lokuhluthwa kwe-elektroniki kunye nokukwazi ukuxhathisa ukusasazeka kwemitha, kufanelekile ngakumbi ukwenza ubushushu obuphezulu, ukuphindaphinda okuphezulu, ukuxhathisa kwi-radiation kunye nezixhobo eziphezulu zamandla. , edla ngokubizwa ngokuba yi-wide bandgap semiconductor imathiriyeli (ibhendi enqatshelweyo yobubanzi bukhulu kune-2.2 eV), ikwabizwa ngokuba yiqondo lobushushu eliphezulu izixhobo zesemiconductor. Ukususela kuphando lwangoku malunga nezixhobo ze-semiconductor zesizukulwana sesithathu kunye nezixhobo, i-silicon carbide kunye ne-gallium nitride semiconductor materials zikhulile ngakumbi, kwayeiteknoloji ye-silicon carbidengoyena uqolileyo, ngelixa uphando lwezinc oxide, idayimani, i-aluminiyam nitride kunye nezinye izinto zisekwinqanaba lokuqala.

Izixhobo kunye neePropati zazo:

I-silicon carbideizinto ezisetyenziswa ngokubanzi kwiibheringi zebhola ze-ceramic, iivalvu, imathiriyeli yesemiconductor, igyros, izixhobo zokulinganisa, i-aerospace kunye namanye amabala, iye yaba yinto engenakubuyiselwa kwiindawo ezininzi zoshishino.

I-SiC luhlobo lwe-superlattice yendalo kunye ne-polytype eqhelekileyo. Kukho ngaphezu kwe-200 (okwangoku eyaziwayo) iintsapho ze-polytypic ze-homotypic ngenxa yokwahlukana kokulandelelana kokupakisha phakathi kwe-Si kunye ne-C diatomic layers, ekhokelela kwizakhiwo ezahlukeneyo zekristale. Ngoko ke, i-SiC ifaneleke kakhulu kwisizukulwana esitsha se-substrate diode (LED) ye-substrate material, amandla aphezulu e-elektroniki.