Inkqubo yokukhula kwekristale yesilicon carbide kunye neteknoloji yezixhobo

1. Indlela yeteknoloji yokukhula kwekristale yeSiC

I-PVT (indlela yokuthotywa kwezantsi),

I-HTCVD (ubushushu obuphezulu CVD),

I-LPE(indlela yesigaba solwelo)

zintathu eziqhelekileyoIkristale yeSiCiindlela zokukhula;

Indlela eyaziwayo kakhulu kwishishini yindlela ye-PVT, kwaye ngaphezu kwe-95% ye-crystals ye-SiC enye ikhuliswe yindlela ye-PVT;

AmashishiniIkristale yeSiCiziko lokukhula lisebenzisa indlela yeteknoloji yePVT engundoqo kushishino.

2. Inkqubo yokukhula kwekristale yeSiC

Ukwenziwa komgubo-imbewu yekristale unyango-ukukhula kwekristale-ingot annealing-iqhekeza lesonkaukuqhubekeka.

3. Indlela yePVT yokukhulaIikristale zeSiC

Izinto eziluhlaza ze-SiC zibekwe phantsi kwe-graphite crucible, kwaye i-crystal yembewu ye-SiC iphezulu kwi-graphite crucible. Ngokulungelelanisa i-insulation, iqondo lokushisa kwi-SiC impahla eluhlaza liphezulu kwaye iqondo lokushisa kwi-crystal yembewu liphantsi. Izinto eziluhlaza ze-SiC kwi-sublimates ephezulu yobushushu kwaye ibole ibe yizinto zesigaba segesi, ezithuthelwa kwikristale yembewu enobushushu obuphantsi kunye nekristale ukwenza iikristale zeSiC. Inkqubo yokukhula esisiseko ibandakanya iinkqubo ezintathu: ukubola kunye nokuthotywa kwezinto eziluhlaza, ukuhanjiswa kobuninzi, kunye ne-crystallization kwiikristale zembewu.

Ukubola kunye nokuthotywa kwemathiriyeli ekrwada:

SiC(S)=Si(g)+C(S)

2SiC(S)= Si(g)+ SiC2(g)

2SiC(S)=C(S)+SiC2(g)

Ngexesha logqithiselo lobuninzi, umphunga we-Si uphinda uphendule kunye nodonga lwe-graphite crucible ukwenza i-SiC2 kunye ne-Si2C:

Si(g)+2C(S) =SiC2(g)

2Si(g) +C(S)=Si2C(g)

Kumphezulu wekristale yembewu, izigaba ezithathu zegesi zikhula ngezi fomula zimbini zilandelayo ukuvelisa iikristale zesilicon carbide:

SiC2_(g)+Si2C_(g)=3SiC_(s)

Si_(g)+SiC2_(g)=2SiC_(S)

4. Indlela ye-PVT yokukhulisa indlela yeteknoloji ye-SiC crystal yezixhobo zokukhula

Okwangoku, ukufudumeza kwe-induction yindlela yeteknoloji eqhelekileyo ye-PVT indlela ye-SiC crystal ukukhula kwee-furnaces;

I-coil yokufudumeza yangaphandle kunye nokumelana nokufudumeza kwegraphite yindlela yokuphuhlisaIkristale yeSiCamaziko okukhula.

5. 8-intshi SiC induction ukufudumeza ukukhula eziko

(1) Ukufudumeza ii-graphite crucible into yokufudumezangokusebenzisa induction magnetic field; ukulawula intsimi yeqondo lokushisa ngokulungelelanisa amandla okufudumala, indawo yekhoyili, kunye nesakhiwo se-insulation;

(2) Ukufudumeza i-graphite crucible ngokusebenzisa ukufudumeza kwegraphite kunye ne-thermal radiation conduction; ukulawula intsimi yeqondo lokushisa ngokulungelelanisa i-current ye-heater graphite, isakhiwo se-heater, kunye nolawulo lwangoku lwezone;