Itekhnoloji ye-Photolithography igxile ikakhulu ekusebenziseni iisistim zamehlo ukubonisa iipatheni zesekethe kwii-silicone wafers. Ukuchaneka kwale nkqubo kuchaphazela ngokuthe ngqo ukusebenza kunye nemveliso yeesekethe ezidibeneyo. Njengesinye sezixhobo eziphezulu zokwenza i-chip, umatshini we-lithography uqulethe ukuya kumakhulu amawaka amacandelo. Zombini amacandelo kunye namacandelo ngaphakathi kwenkqubo ye-lithography ifuna ukuchaneka okuphezulu kakhulu ukuqinisekisa ukusebenza kwesekethe kunye nokuchaneka.Iiseramikhi zeSiCzisetyenziswe kwii-wafer chuckskunye nezibuko ze-ceramic square.
I-wafer chuckI-wafer chuck kumatshini we-lithography ithwala kwaye ihambisa i-wafer ngexesha lenkqubo yokuvezwa. Ukulungelelaniswa okuchanekileyo phakathi kwe-wafer kunye ne-chuck kubalulekile ukuphindaphinda ngokuchanekileyo ipateni kumphezulu we-wafer.Iqhekeza leSiCi-chucks iyaziwa ngokuba yi-lightweight, i-high dimensional stability kunye ne-coefficient ephantsi yokwandiswa kwe-thermal, enokunciphisa imithwalo ye-inertial kunye nokuphucula ukuhamba kakuhle, ukubeka ukuchaneka kunye nokuzinza.
Isibuko sesikwere seCeramic Kumatshini we-lithography, ulungelelwaniso lwentshukumo phakathi kwe-wafer chuck kunye nenqanaba lemaski libalulekile, elichaphazela ngokuthe ngqo ukuchaneka kwe-lithography kunye nesivuno. Isibonisi esisikweri licandelo eliphambili le-wafer chuck yokuskena inkqubo yokulinganisa impendulo, kwaye iimfuno zayo zemathiriyeli zikhaphukhaphu kwaye zingqongqo. Nangona i-silicon carbide ceramics ineepropathi ezifanelekileyo zobunzima, ukwenza izinto ezinjalo kulucelomngeni. Okwangoku, abavelisi bezixhobo zesekethe ezidibeneyo zamazwe ngamazwe basebenzisa izixhobo ezifana ne-silica edibeneyo kunye ne-cordierite. Nangona kunjalo, ngokuhambela phambili kwetekhnoloji, iingcali zaseTshayina zifezekise ukwenziwa kobungakanani obukhulu, obunobume obuntsonkothileyo, obukhaphukhaphu, obuvaleleke ngokupheleleyo besilicon carbide ceramic square mirrors kunye namanye amacandelo asebenzayo optical machines. Ifotomask, ekwabizwa ngokuba yi-aperture, idlulisela ukukhanya kwimaski ukwenza ipateni kwizinto ezibonisa ukukhanya. Nangona kunjalo, xa ukukhanya kwe-EUV kukhanyisa imaski, ikhupha ubushushu, inyusa ubushushu ukuya kuma-600 ukuya kwi-1000 degrees Celsius, nto leyo enokubangela umonakalo wobushushu. Ke ngoko, umaleko wefilimu ye-SiC uhlala ufakwa kwi-photomask. Iinkampani ezininzi zangaphandle, ezifana ne-ASML, ngoku zibonelela ngeefilimu ezinokuhanjiswa okungaphezulu kwe-90% ukunciphisa ukucocwa kunye nokuhlolwa ngexesha lokusetyenziswa kwe-photomask kunye nokuphucula ukusebenza kakuhle kunye nemveliso yemveliso yeematshini ze-EUV photolithography.
Ukufakwa kwePlasmakunye neDeposition Photomasks, ekwabizwa ngokuba yi-crosshairs, inomsebenzi ophambili wokuhambisa ukukhanya ngemaski kunye nokwenza ipateni kwizinto ezibonisa ukukhanya. Nangona kunjalo, xa ukukhanya kwe-EUV (i-ultraviolet egqithisileyo) ikhupha i-photomask, ikhupha ubushushu, inyuse ubushushu bube phakathi kwe-600 kunye ne-1000 ngokukaCelsius, nto leyo enokubangela umonakalo wobushushu. Ke ngoko, umaleko we-silicon carbide (SiC) ifilimu ihlala ifakwa kwi-photomask ukunciphisa le ngxaki. Okwangoku, iinkampani ezininzi zangaphandle, ezifana ne-ASML, ziye zaqala ukubonelela ngeefilimu ngokungafihlisi ngaphezu kwe-90% ukunciphisa imfuno yokucoca kunye nokuhlolwa ngexesha lokusetyenziswa kwe-photomask, ngaloo ndlela kuphuculwe ukusebenza kakuhle kunye nemveliso yemveliso yoomatshini be-EUV lithography. . Ukufakwa kwePlasma kunyeDeposition Focus Ringkunye nabanye Kwimveliso ye-semiconductor, inkqubo yokufaka i-etchants yolwelo okanye igesi (ezifana neegesi ezine-fluorine) i-ionized kwi-plasma ukuze ibhobhoze i-wafer kwaye ngokukhethayo isuse izinto ezingafunekiyo de iphethini yesekethe efunekayo ihlaleiqhekezana lesonkaumphezulu. Ngokwahlukileyo, ukubekwa kwefilim ebhityileyo kuyafana necala elingasemva le-etching, kusetyenziswa indlela yokubeka ukupakisha imathiriyeli yokugquma phakathi kweemaleko zentsimbi ukwenza ifilimu ebhityileyo. Kuba zombini iinkqubo zisebenzisa itekhnoloji yeplasma, ziqhelekile kwiziphumo ezinobungozi kumagumbi kunye namalungu. Ke ngoko, amacandelo angaphakathi kwesixhobo afuneka ukuba abe nokuchasana kakuhle kweplasma, ukuphinda kusebenze okuphantsi kwiigesi ze-fluorine etching, kunye nokuqhuba okuphantsi. Izixhobo zemveli zokuhombisa kunye nezixhobo zokubeka, ezifana nezangqa, zihlala zenziwe ngezinto ezinjengesilicon okanye iquartz. Nangona kunjalo, ngokuqhubela phambili kwesekethe encinci ye-miniaturization, imfuno kunye nokubaluleka kweenkqubo zokudibanisa kwimveliso yesekethe edibeneyo iyakhula. Kwinqanaba le-microscopic, i-silicon wafer etching echanekileyo ifuna iplasma ephezulu yamandla ukufezekisa ububanzi bemigca emincinci kunye nezixhobo ezinzima ngakumbi. Ke ngoko, i-chemical vapor deposition (CVD) isilicon carbide (SiC) ithe ngokuthe ngcembe yaba yeyona nto ikhethwayo yokugquma i-etching kunye nezixhobo zokubeka kunye neempawu zayo ezibalaseleyo zomzimba kunye neekhemikhali, ukucoceka okuphezulu kunye nokufana. Okwangoku, amacandelo e-CVD silicon carbide kwisixhobo sokudibanisa abandakanya amakhonkco okugxila, iintloko zeshawari yegesi, iitreyi kunye namakhonkco omphetho. Kwizixhobo zokubeka, kukho iikhava zegumbi, iileyili zegumbi kunyeI-SIC-coated graphite substrates.
Ngenxa ye-reactivity ephantsi kunye ne-conductivity kwi-chlorine kunye neegesi ze-fluorine etching,CVD isilicon carbideiye yaba yinto efanelekileyo kumacandelo afana namakhonkco ekugxilwe kuwo kwi-plasma etching izixhobo.CVD isilicon carbideiikhomponenti kwizixhobo etching ziquka amakhonkco kugxilwe, iintloko irhasi ishawa, iitreyi, amakhonkco edge, njl Thatha amakhonkco kugxilwe njengomzekelo, amacandelo aphambili ibekwe ngaphandle wafer kunye ukudibana ngqo ne wafer. Ngokusebenzisa i-voltage kwindandatho, iplasma igxile kwindandatho kwi-wafer, iphucula ukufana kwenkqubo. Ngokwesiko, iindandatho zokugxila zenziwe nge-silicon okanye i-quartz. Nangona kunjalo, njengoko isekethe edibeneyo ye-miniaturization iqhubela phambili, imfuno kunye nokubaluleka kweenkqubo ze-etching kwimveliso yesekethe edibeneyo iyaqhubeka nokukhula. Amandla e-Plasma etching amandla kunye neemfuno zamandla ziyaqhubeka nokunyuka, ngakumbi kwi-capacitively coupled plasma (CCP) etching izixhobo, ezifuna amandla aphezulu eplasma. Ngenxa yoko, ukusetyenziswa kweendandatho zokugxila ezenziwe ngezinto ze-silicon carbide ziyanda.
Ixesha lokuposa: Oct-29-2024