Ukufakwa kwe-SiC kunokulungiswa nge-chemical vapor deposition (CVD), ukuguqulwa kwe-precursor, ukutshiza i-plasma, njl njl. I-coating elungiselelwe yi-CHEMICAL yokubeka umphunga ifana kwaye ihlangene, kwaye inokwakheka okulungileyo. Ukusebenzisa i-methyl trichlorsilane. (I-CHzSiCl3, i-MTS) njengomthombo we-silicon, i-SiC yokugqoka elungiselelwe yindlela ye-CVD yindlela ekhulileyo yokusetyenziswa kolu luhlu.
Ukwaleka kwe-SiC kunye negraphite zinokuhambelana kakuhle kweekhemikhali, umahluko wokwandiswa kwe-thermal coefficient phakathi kwabo kuncinci, ukusebenzisa i-SiC yokwambathisa kunokuphucula ngokufanelekileyo ukuxhathisa ukunxiba kunye nokumelana ne-oxidation yezinto zegraphite. Phakathi kwabo, umlinganiselo we-stoichiometric, ubushushu bokuphendula, igesi yokuhlanjululwa, igesi yokungcola kunye nezinye iimeko zinempembelelo enkulu ekuphenduleni.
Ixesha lokuposa: Sep-14-2022