Iziseko zegraphite eziqatywe ngeSiC ziqhele ukusetyenziselwa ukuxhasa kunye nokufudumeza i-crystal substrates enye kwi-metal-organic chemical deposition deposition (MOCVD) izixhobo. Uzinzo lwe-thermal, ukufana kwe-thermal kunye nezinye iiparameters zokusebenza ze-SiC coated graphite base zidlala indima eqinisekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yeyona nto ingundoqo yezixhobo ze-MOCVD.
Kwinkqubo yokwenziwa kwe-wafer, iileya ze-epitaxial ziyaphinda zakhiwe kwezinye ii-wafer substrates ukuququzelela ukwenziwa kwezixhobo. Izixhobo eziqhelekileyo ze-LED ezikhupha ukukhanya kufuneka zilungiselele i-epitaxial layers ye-GaAs kwii-silicon substrates; I-SiC epitaxial layer ikhuliswe kwi-conductive SiC substrate yokwakhiwa kwezixhobo ezifana ne-SBD, i-MOSFET, njl., kumbane ophezulu, umbane ophezulu kunye nezinye izicelo zamandla; I-GaN epitaxial layer yakhiwe kwi-semi-insulated ye-SiC substrate ukuqhubela phambili ukwakhiwa kwe-HEMT kunye nezinye izixhobo zosetyenziso lweRF ezifana nonxibelelwano. Le nkqubo ayinakwahlulwa kwizixhobo zeCVD.
Kwizixhobo ze-CVD, i-substrate ayinakubekwa ngokuthe ngqo kwisinyithi okanye ibekwe nje kwisiseko se-epitaxial deposition, kuba ibandakanya ukuhamba kwegesi (i-horizontal, i-vertical), iqondo lokushisa, uxinzelelo, ukulungiswa, ukuchithwa kwezinto ezingcolileyo kunye neminye imiba. izinto ezinempembelelo. Ngoko ke, kuyimfuneko ukusebenzisa isiseko, kwaye emva koko ubeke i-substrate kwi-disc, uze usebenzise iteknoloji ye-CVD kwi-epitaxial deposition kwi-substrate, eyisiseko se-graphite efakwe kwi-SiC (eyaziwa nangokuthi i-tray).
Iziseko zegraphite eziqatywe ngeSiC ziqhele ukusetyenziselwa ukuxhasa kunye nokufudumeza i-crystal substrates enye kwi-metal-organic chemical deposition deposition (MOCVD) izixhobo. Uzinzo lwe-thermal, ukufana kwe-thermal kunye nezinye iiparameters zokusebenza ze-SiC coated graphite base zidlala indima eqinisekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yeyona nto ingundoqo yezixhobo ze-MOCVD.
I-Metal-organic chemical vapor deposition (MOCVD) yiteknoloji eqhelekileyo yokukhula kwe-epitaxial yeefilimu ze-GaN kwi-LED eluhlaza. Ineenzuzo zokusebenza okulula, izinga lokukhula elilawulekayo kunye nokucoceka okuphezulu kweefilimu ze-GaN. Njengecandelo elibalulekileyo kwigumbi lokuphendula lezixhobo ze-MOCVD, isiseko sokuthwala esisetyenziselwa ukukhula kwefilimu ye-GaN i-epitaxial kufuneka ibe neenzuzo zokumelana nobushushu obuphezulu, i-conductivity efanayo ye-thermal, ukuzinza okuhle kweekhemikhali, ukuxhathisa ukothuka kwe-thermal, njl njl. Izinto zegraphite zinokudibana nazo. le miqathango ingentla.
Njengenye yezinto eziphambili zezixhobo ze-MOCVD, isiseko segraphite sisithwala kunye nokufudumeza umzimba we-substrate, echaza ngokuthe ngqo ukufana kunye nokucoceka kwezinto zefilimu, ngoko umgangatho wayo uchaphazela ngokuthe ngqo ukulungiswa kwephepha le-epitaxial, kwaye ngexesha elifanayo. ixesha, kunye nokwandiswa kwenani lokusetyenziswa kunye nokutshintsha kweemeko zokusebenza, kulula kakhulu ukunxiba, ezizezokutya.
Nangona igraphite ine-conductivity egqwesileyo ye-thermal kunye nokuzinza, inenzuzo enhle njengesiseko sesiseko sezixhobo ze-MOCVD, kodwa kwinkqubo yokuvelisa, i-graphite iya kutshabalalisa umgubo ngenxa yentsalela yeegesi ezinobungozi kunye ne-metallic organics, kunye nobomi benkonzo. isiseko segraphite siya kuncitshiswa kakhulu. Ngelo xesha, i-graphite powder ewayo iya kubangela ukungcola kwi-chip.
Ukuvela kobugcisa bokugquma kunokubonelela ngokulungiswa komgubo womphezulu, ukunyusa umgangatho we-thermal conductivity, kunye nokulinganisa ukusabalalisa ubushushu, obuye bubuchwephesha obuphambili bokusombulula le ngxaki. Isiseko segraphite kwindawo yokusetyenziswa kwezixhobo ze-MOCVD, isiseko somgangatho wegraphite kufuneka sihlangabezane nezi mpawu zilandelayo:
(1) Isiseko segraphite sinokugqunywa ngokupheleleyo, kwaye ukuxinana kukuhle, ngaphandle koko isiseko segraphite silula ukutshatyalaliswa kwigesi ephazamisayo.
(2) Amandla okudibanisa kunye nesiseko segraphite aphezulu ukuze kuqinisekiswe ukuba i-coating ayikho lula ukuwa emva kobushushu obuphezulu kunye nemijikelo yobushushu obuphantsi.
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I-SiC ineenzuzo zokuxhathisa i-corrosion, i-conductivity ephezulu ye-thermal, i-thermal shock resistance kunye nokuzinza okuphezulu kweekhemikhali, kwaye inokusebenza kakuhle kwi-GaN epitaxial atmosphere. Ukongezelela, i-coefficient yokwandisa i-thermal ye-SiC ihluke kakhulu kwi-graphite, ngoko ke i-SiC yinto ekhethiweyo yokugubungela umphezulu wesiseko segraphite.
Okwangoku, i-SiC eqhelekileyo iyinhloko ye-3C, i-4H kunye ne-6H uhlobo, kwaye i-SiC isebenzisa iintlobo ze-crystal ezahlukeneyo. Ngokomzekelo, i-4H-SiC inokuvelisa izixhobo eziphezulu zamandla; I-6H-SiC yeyona nto izinzile kwaye inokuvelisa izixhobo ze-photoelectric; Ngenxa yesakhiwo esifana ne-GaN, i-3C-SiC ingasetyenziselwa ukuvelisa i-GaN epitaxial layer kunye nokuvelisa izixhobo ze-SiC-GaN RF. I-3C-SiC iyaziwa ngokuqhelekileyo ngokuba yi-β-SiC, kwaye ukusetyenziswa okubalulekileyo kwe-β-SiC kufana nefilimu kunye nezinto zokugqoka, ngoko ke i-β-SiC okwangoku iyona nto iphambili yokugqoka.
Ixesha lokuposa: Aug-04-2023