Iziseko zegraphite eziqatywe ngeSiC ziqhele ukusetyenziselwa ukuxhasa kunye nokufudumeza i-crystal substrates enye kwi-metal-organic chemical deposition deposition (MOCVD) izixhobo. Uzinzo lwe-thermal, ukufana kwe-thermal kunye nezinye iiparameters zokusebenza ze-SiC coated graphite base zidlala indima eqinisekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yeyona nto ingundoqo yezixhobo ze-MOCVD.
Kwinkqubo yokwenziwa kwe-wafer, iileya ze-epitaxial ziyaphinda zakhiwe kwezinye ii-wafer substrates ukuququzelela ukwenziwa kwezixhobo. Izixhobo eziqhelekileyo ze-LED ezikhupha ukukhanya kufuneka zilungiselele i-epitaxial layers ye-GaAs kwii-silicon substrates; I-SiC epitaxial layer ikhuliswe kwi-conductive SiC substrate yokwakhiwa kwezixhobo ezifana ne-SBD, i-MOSFET, njl., kumbane ophezulu, umbane ophezulu kunye nezinye izicelo zamandla; I-GaN epitaxial layer yakhiwe kwi-semi-insulated ye-SiC substrate ukuqhubela phambili ukwakhiwa kwe-HEMT kunye nezinye izixhobo zosetyenziso lweRF ezifana nonxibelelwano. Le nkqubo ayinakwahlulwa kwizixhobo zeCVD.
Kwizixhobo ze-CVD, i-substrate ayinakubekwa ngokuthe ngqo kwisinyithi okanye ibekwe nje kwisiseko se-epitaxial deposition, kuba ibandakanya ukuhamba kwegesi (i-horizontal, i-vertical), iqondo lokushisa, uxinzelelo, ukulungiswa, ukuchithwa kwezinto ezingcolileyo kunye neminye imiba. izinto ezinempembelelo. Ngoko ke, isiseko siyafuneka, kwaye ke i-substrate ifakwe kwi-disc, kwaye ke i-epitaxial deposition iqhutyelwa kwi-substrate usebenzisa iteknoloji ye-CVD, kwaye esi siseko sisisiseko se-graphite esifakwe kwi-SiC (eyaziwa nangokuthi i-tray).
Iziseko zegraphite eziqatywe ngeSiC ziqhele ukusetyenziselwa ukuxhasa kunye nokufudumeza i-crystal substrates enye kwi-metal-organic chemical deposition deposition (MOCVD) izixhobo. Uzinzo lwe-thermal, ukufana kwe-thermal kunye nezinye iiparameters zokusebenza ze-SiC coated graphite base zidlala indima eqinisekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yeyona nto ingundoqo yezixhobo ze-MOCVD.
I-Metal-organic chemical vapor deposition (MOCVD) yiteknoloji eqhelekileyo yokukhula kwe-epitaxial yeefilimu ze-GaN kwi-LED eluhlaza. Ineenzuzo zokusebenza okulula, izinga lokukhula elilawulekayo kunye nokucoceka okuphezulu kweefilimu ze-GaN. Njengecandelo elibalulekileyo kwigumbi lokuphendula lezixhobo ze-MOCVD, isiseko sokuthwala esisetyenziselwa ukukhula kwefilimu ye-GaN ye-epitaxial kufuneka ibe neenzuzo zokumelana nobushushu obuphezulu, i-uniform conductivity ye-thermal, ukuzinza okuhle kweekhemikhali, ukuxhathisa ukothuka kwe-thermal, njl njl. Izinto zegraphite zinokudibana nazo. le miqathango ingentla.
Njengenye yezinto eziphambili zezixhobo ze-MOCVD, isiseko segraphite sisithwala kunye nokufudumeza umzimba we-substrate, echaza ngokuthe ngqo ukufana kunye nokucoceka kwezinto zefilimu, ngoko umgangatho wayo uchaphazela ngokuthe ngqo ukulungiswa kwephepha le-epitaxial, kwaye ngexesha elifanayo. ixesha, kunye nokwandiswa kwenani lokusetyenziswa kunye nokutshintsha kweemeko zokusebenza, kulula kakhulu ukunxiba, ezizezokutya.
Nangona igraphite ine-conductivity egqwesileyo ye-thermal kunye nokuzinza, inenzuzo enhle njengesiseko sesiseko sezixhobo ze-MOCVD, kodwa kwinkqubo yokuvelisa, i-graphite iya kutshabalalisa umgubo ngenxa yentsalela yeegesi ezinobungozi kunye ne-metallic organics, kunye nobomi benkonzo. isiseko segraphite siya kuncitshiswa kakhulu. Ngelo xesha, i-graphite powder ewayo iya kubangela ukungcola kwi-chip.
Ukuvela kobugcisa bokugquma kunokubonelela ngokulungiswa komgubo womphezulu, ukunyusa umgangatho we-thermal conductivity, kunye nokulinganisa ukusabalalisa ubushushu, obuye bubuchwephesha obuphambili bokusombulula le ngxaki. Isiseko segraphite kwindawo yokusetyenziswa kwezixhobo ze-MOCVD, isiseko somgangatho wegraphite kufuneka sihlangabezane nezi mpawu zilandelayo:
(1) Isiseko segraphite sinokugqunywa ngokupheleleyo, kwaye ukuxinana kukuhle, ngaphandle koko isiseko segraphite silula ukutshatyalaliswa kwigesi ephazamisayo.
(2) Amandla okudibanisa kunye nesiseko segraphite aphezulu ukuze kuqinisekiswe ukuba i-coating ayikho lula ukuwa emva kobushushu obuphezulu kunye nemijikelo yobushushu obuphantsi.
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I-SiC ineenzuzo zokuxhathisa i-corrosion, i-conductivity ephezulu ye-thermal, i-thermal shock resistance kunye nokuzinza okuphezulu kweekhemikhali, kwaye inokusebenza kakuhle kwi-GaN epitaxial atmosphere. Ukongezelela, i-coefficient yokwandisa i-thermal ye-SiC ihluke kakhulu kwi-graphite, ngoko ke i-SiC yinto ekhethiweyo yokugubungela umphezulu wesiseko segraphite.
Okwangoku, i-SiC eqhelekileyo iyinhloko ye-3C, i-4H kunye ne-6H uhlobo, kwaye i-SiC isebenzisa iintlobo ze-crystal ezahlukeneyo. Ngokomzekelo, i-4H-SiC inokuvelisa izixhobo eziphezulu zamandla; I-6H-SiC yeyona nto izinzile kwaye inokuvelisa izixhobo ze-photoelectric; Ngenxa yesakhiwo esifana ne-GaN, i-3C-SiC ingasetyenziselwa ukuvelisa i-GaN epitaxial layer kunye nokuvelisa izixhobo ze-SiC-GaN RF. I-3C-SiC iyaziwa ngokuqhelekileyo ngokuba yi-β-SiC, kwaye ukusetyenziswa okubalulekileyo kwe-β-SiC kufana nefilimu kunye nezinto zokugqoka, ngoko ke i-β-SiC okwangoku iyona nto iphambili yokugqoka.
Indlela yokulungiselela ukutyabeka kwe-silicon carbide
Okwangoku, iindlela zokulungiselela ukufakwa kwe-SiC ikakhulu zibandakanya indlela ye-gel-sol, indlela yokufaka, indlela yokufaka ibrashi, indlela yokutshiza iplasma, indlela yokusabela kwegesi yeekhemikhali (CVR) kunye nendlela yokubeka umphunga wekhemikhali (CVD).
Indlela yokufakela:
Indlela luhlobo lobushushu obuphezulu obuqinileyo besigaba sokuntywila, obusebenzisa ikakhulu umxube weSi powder kunye nomgubo weC njengomgubo wokufakela, i-graphite matrix ibekwe kumgubo wokufakela, kwaye ubushushu obuphezulu be-sintering buqhutywa kwirhasi engasebenziyo. , kwaye ekugqibeleni i-coating ye-SiC ifunyenwe kumphezulu we-graphite matrix. Inkqubo ilula kwaye indibaniselwano phakathi kokugquma kunye ne-substrate ilungile, kodwa ukufana kwengubo ecaleni kolwalathiso lobunzima kubi, okulula ukuvelisa imingxuma emininzi kwaye kukhokelela ekuxhathiseni i-oxidation embi.
Indlela yokwaleka ibrashi:
Indlela yokwaleka ibrashi ikakhulu ukubrasha ulwelo imathiriyeli ekrwada kumphezulu grafiti matrix, uze unyange imathiriyeli ekrwada kwiqondo lobushushu elithile ukulungiselela ukutyabeka. Inkqubo ilula kwaye ixabiso liphantsi, kodwa i-coating elungiselelwe yindlela yokugqoka ibrashi ibuthathaka ngokudibanisa ne-substrate, ukufana kwengubo kubi, ukugquma kuncinci kwaye ukuxhathisa kwe-oxidation kuphantsi, kwaye ezinye iindlela ziyafuneka ukuncedisa. yona.
Indlela yokutshiza ngeplasma:
Indlela yokutshiza iplasma ikakhulu kukutshiza izinto ezinyibilikayo okanye ezincibilikisiweyo ezincibilikisiwe kumphezulu wegrafu yegrafu ngompu weplasma, emva koko uqinise kwaye ubophe ukuze wenze isambatho. Indlela ilula ukuyisebenzisa kwaye inokulungiselela i-silicon carbide exineneyo yokwaleka, kodwa i-silicon carbide yokwaleka elungiswe yindlela ihlala ibuthathaka kakhulu kwaye ikhokelela ekunganyangekiyo kwe-oxidation, ngoko ke isetyenziselwa ukulungiswa kwe-SiC composite coating ukuphucula. umgangatho wokwaleka.
Indlela ye-gel-sol:
Indlela ye-gel-sol ikakhulu kukulungisa isisombululo esifanayo kunye nesicacileyo se-sol esigubungela umphezulu we-matrix, yomiswe kwijeli kwaye emva koko i-sintering ukufumana i-coating. Le ndlela ilula ukuyisebenzisa kwaye iphantsi kweendleko, kodwa i-coating eveliswayo inezinye iintsilelo ezifana nokuxhathisa ukutshitshiswa kwe-thermal kunye nokuqhekeka okulula, ngoko ayikwazi ukusetyenziswa ngokubanzi.
Isenzo seGesi yeMichiza (CVR) :
I-CVR ivelisa ikakhulu i-SiC coating ngokusebenzisa i-Si kunye ne-SiO2 powder ukuvelisa i-SiO umphunga kwiqondo lokushisa eliphezulu, kunye nochungechunge lwee-chemical reactions zenzeka kumphezulu we-substrate ye-C. I-coating ye-SiC elungiselelwe yile ndlela idibene ngokusondeleyo kwi-substrate, kodwa ubushushu bokusabela buphezulu kwaye ixabiso liphezulu.
Ukubekwa kweMichiza yoMphunga (CVD) :
Okwangoku, i-CVD yeyona teknoloji iphambili yokulungiselela i-SiC coating kwi-substrate surface. Inkqubo ephambili luhlu lweempendulo ezibonakalayo kunye neekhemikhali ze-gas phase reactant material kwi-substrate surface, kwaye ekugqibeleni i-coating ye-SiC ilungiselelwe ngokubeka kwi-substrate surface. I-coating ye-SiC elungiselelwe yi-teknoloji ye-CVD idityaniswe ngokusondeleyo kumphezulu we-substrate, enokuthi iphucule ngokufanelekileyo ukuxhathisa i-oxidation kunye nokumelana ne-ablative yezinto ze-substrate, kodwa ixesha lokubeka le ndlela lide, kwaye igesi yokusabela inetyhefu ethile. igesi.
Imeko yemarike yeSiC igqunywe isiseko segraphite
Xa abavelisi bamazwe angaphandle baqala kwangoko, babenokhokelo olucacileyo kunye nesabelo esikhulu semarike. Kumazwe ngamazwe, ababoneleli abaphambili beSiC coated graphite base yiDutch Xycard, Germany SGL Carbon (SGL), Japan Toyo Carbon, United States MEMC kunye nezinye iinkampani, ezihlala ngokusisiseko kwimarike yamazwe ngamazwe. Nangona iTshayina yaphule iteknoloji engundoqo yokukhula okufanayo kwe-SiC yokwambathisa kumphezulu we-graphite matrix, umgangatho ophezulu we-graphite matrix usaxhomekeke kwi-SGL yaseJamani, i-Japan Toyo Carbon kunye namanye amashishini, i-matrix yegraphite ebonelelwa ngamashishini asekhaya ichaphazela inkonzo. ubomi ngenxa ye-thermal conductivity, i-elastic modulus, i-modulus eqinile, iziphene ze-lattice kunye nezinye iingxaki zomgangatho. Izixhobo ze-MOCVD azikwazi ukuhlangabezana neemfuno zokusetyenziswa kwesiseko segraphite esifakwe kwiSiC.
Ishishini le-semiconductor laseTshayina likhula ngokukhawuleza, ngokunyuka ngokuthe ngcembe kwenqanaba le-MOCVD epitaxial yezixhobo zendawo, kunye nezinye iinkqubo zokwandiswa kwezicelo, imarike yemveliso yesiseko segraphite yexesha elizayo yeSiC kulindeleke ukuba ikhule ngokukhawuleza. Ngokoqikelelo lokuqala lweshishini, imarike yesiseko segraphite yasekhaya iya kudlula i-500 yezigidi zeeyuan kule minyaka imbalwa izayo.
Isiseko segraphite esakhiweyo seSiC siyinxalenye engundoqo yesixhobo soshishino semiconductor edibeneyo, ukulawula ubuchwephesha obuphambili bemveliso kunye nokuveliswa kwayo, kunye nokuqonda ukwenziwa kwasekhaya kwetsheyini leshishini lemathiriyeli ekrwada-inkqubo-izixhobo kubaluleke kakhulu kwiqhinga lokuqinisekisa uphuhliso lwemveliso. Ishishini le-semiconductor yaseTshayina. Intsimi yesiseko segraphite yeSiC yasekhaya iyakhula, kwaye umgangatho wemveliso unokufikelela kwinqanaba eliphezulu lamazwe ngamazwe kungekudala.
Ixesha lokuposa: Jul-24-2023