Recrystallizedi-silicon carbide (RSiC) iiseramikhizi aumgangatho ophezulu we-ceramic material. Ngenxa yokumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukumelana nokugqwala kunye nobunzima obuphezulu, isetyenziswe ngokubanzi kwiinkalo ezininzi, ezifana nokuveliswa kwe-semiconductor, ishishini le-photovoltaic, iziko lobushushu obuphezulu kunye nezixhobo zekhemikhali. Ngokunyuka kwemfuno yezixhobo zokusebenza okuphezulu kwishishini lanamhlanje, uphando kunye nophuhliso lwe-silicon carbide ceramics ehlaziyiweyo iya isiba nzulu.
1. Ukulungiselela iteknoloji yeiiceramics ezenziwe ngesilicon carbide
Itekhnoloji yokulungiselela i-recrystallizedi-silicon carbide ceramicsikakhulu ibandakanya iindlela ezimbini: umgubo wokutshiza kunye nokubekwa komphunga (CVD). Phakathi kwazo, indlela yokucoca umgubo kukufaka i-silicon carbide powder phantsi kobushushu obuphezulu bemeko ukuze amasuntswana e-silicon carbide enze isakhiwo esixineneyo ngokusasazwa kunye nokuphinda kuhlaziywe phakathi kweenkozo. Indlela yokubeka umphunga kukufaka i-silicon carbide kumphezulu we-substrate ngokusabela komphunga wekhemikhali kwiqondo lobushushu eliphezulu, ngaloo ndlela yenze ifilimu ye-silicon carbide ecocekileyo kakhulu okanye iindawo ezakhiweyo. Ezi teknoloji zimbini zineenzuzo zazo. Indlela ye-powder sintering ifanelekile kwimveliso enkulu kwaye inexabiso eliphantsi, ngelixa indlela yokubeka umphunga inokubonelela ngokucoceka okuphezulu kunye nesakhiwo esixineneyo, kwaye isetyenziswa ngokubanzi kwintsimi ye-semiconductor.
2. Iimpawu eziphathekayo zeiiceramics ezenziwe ngesilicon carbide
Uphawu olubalaseleyo lwe-silicon carbide ceramics ehlaziyiweyo kukusebenza kwayo okugqwesileyo kwiindawo eziphakamileyo zobushushu. Indawo yokunyibilika yale nto iphezulu kwi-2700 ° C, kwaye inamandla omatshini amahle kumaqondo aphezulu. Ukongeza, i-silicon carbide ehlaziyiweyo inokumelana okugqwesileyo kwe-oxidation kunye nokumelana nokugqwala, kwaye inokuhlala izinzile kwiimeko ezigqithisileyo zeekhemikhali. Ke ngoko, ii-ceramics ze-RSiC zisetyenziswe ngokubanzi kwimimandla yobushushu bobushushu obuphezulu, izinto zokumelana nobushushu obuphezulu, kunye nezixhobo zekhemikhali.
Ukongeza, i-silicon carbide ehlaziyiweyo ine-conductivity ephezulu ye-thermal kwaye inokuqhuba ngokufanelekileyo ubushushu, nto leyo eyenza ukuba ibe nexabiso lesicelo esibalulekileyoMOCVD reactorskunye nezixhobo zokunyanga ubushushu kwimveliso ye-semiconductor wafer. I-conductivity yayo ephezulu ye-thermal kunye ne-thermal shock resistance iqinisekisa ukusebenza okuthembekileyo kwezixhobo phantsi kweemeko ezinzima.
3. Iinkalo zokusetyenziswa kweeseramics ze-silicon carbide ezihlaziyiweyo
Ukuveliswa kweSemiconductor: Kwishishini le-semiconductor, iiseramics zesilicon carbide eziphinda zaphinda zaphinda zasetyenziswa zisetyenziselwa ukuvelisa ama-substrates kunye nenkxaso kwi-MOCVD reactors. Ngenxa yokumelana nobushushu obuphezulu, ukumelana nokugqwala, kunye ne-thermal conductivity ephezulu, izixhobo ze-RSiC zinokugcina ukusebenza okuzinzile kwiindawo ezintsonkothileyo zokusabela kweekhemikhali, ziqinisekisa umgangatho kunye nemveliso yeewafers ze-semiconductor.
Imboni ye-Photovoltaic: Kwishishini le-photovoltaic, i-RSiC isetyenziselwa ukuvelisa isakhiwo senkxaso yezixhobo zokukhula kwe-crystal. Ekubeni ukukhula kwe-crystal kufuneka kuqhutywe kwiqondo lokushisa eliphezulu ngexesha lokwenziwa kweeseli ze-photovoltaic, ukuxhathisa ukushisa kwe-silicon carbide ehlaziyiweyo kuqinisekisa ukusebenza okuzinzile kwexesha elide kwezixhobo.
Iziko lobushushu obuphezulu: Iiseramikhi ze-RSiC zikwasetyenziswa ngokubanzi kwiziko lobushushu obuphezulu, obunje ngee-linings kunye namacandelo e-vacuum furnaces, amaziko okunyibilika kunye nezinye izixhobo. Ukuxhathisa ukothuka kwe-thermal kunye nokumelana ne-oxidation kuyenza enye yezinto ezingenakubuyiselwa kumashishini aphezulu obushushu.
4. Isalathiso sophando lweekeramics ezenziwe ngesilicon carbide
Ngokukhula kwemfuno yezixhobo zokusebenza okuphezulu, isikhokelo sophando se-silicon carbide ceramics ehlaziyiweyo siye sacaca ngokuthe ngcembe. Uphando lwexesha elizayo luya kugxila kule miba ilandelayo:
Ukuphucula ubunyulu bezinto eziphathekayo: Ukuze kuhlangatyezwane neemfuno eziphakamileyo zokucoceka kwi-semiconductor kunye ne-photovoltaic fields, abaphandi bahlola iindlela zokuphucula ukucoceka kwe-RSiC ngokuphucula iteknoloji yokubeka umphunga okanye ukwazisa izinto ezintsha zekrwada, ngaloo ndlela kuphuculwe ixabiso layo lesicelo kule mihlaba ephezulu. .
Ukuphucula i-microstructure: Ngokulawula iimeko ze-sintering kunye nokusabalalisa i-powder particles, i-microstructure ye-silicon carbide ehlaziyiweyo ingaphuculwa ngakumbi, ngaloo ndlela iphucula iimpawu zayo zomatshini kunye nokuxhatshazwa kwe-thermal shock.
Izinto ezidibeneyo ezisebenzayo: Ukuze ulungelelanise iimeko zokusetyenziswa eziyinkimbinkimbi, abaphandi bazama ukudibanisa i-RSiC kunye nezinye izinto zokuphuhlisa izinto ezidibeneyo kunye neempawu ezisebenzayo, ezifana ne-silicon carbide-based composite-based composite materials with high wear resistance and conductivity yombane.
5. Isiphelo
Njengesixhobo sokusebenza okuphezulu, ii-ceramics ze-silicon carbide ezihlaziyiweyo zisetyenziswe ngokubanzi kwiindawo ezininzi ngenxa yeempawu zabo ezibalaseleyo kubushushu obuphezulu, ukumelana ne-oxidation kunye nokuxhathisa ukubola. Uphando lwexesha elizayo luya kugxila ekuphuculeni ubunyulu bezinto eziphathekayo, ukwandisa i-microstructure kunye nokuphuhlisa izinto ezisebenzayo ezidibeneyo ukuhlangabezana neemfuno ezikhulayo zemizi-mveliso. Ngolu tshintsho lwetekhnoloji, iiseramics ezenziwe ngesilicon carbide kulindeleke ukuba zidlale indima enkulu kumasimi obuchwepheshe obuphezulu.
Ixesha lokuposa: Oct-24-2024