Ngokuveliswa kobunzima obuninzi be-conductive SiC substrates, iimfuno eziphezulu zibekwe phambili ukuzinza kunye nokuphindaphinda inkqubo. Ngokukodwa, ukulawulwa kweziphene, ukulungelelaniswa okuncinci okanye ukuqhutyelwa kwendawo yokushisa kwisithando somlilo, kuya kuzisa utshintsho lwe-crystal okanye ukwanda kweziphene. Kwixesha elizayo, kufuneka sijongane nomceli mngeni "wokukhula ngokukhawuleza, ubude kunye nobukhulu, kunye nokukhula", ukongeza kuphuculo lwethiyori kunye nobunjineli, sikwadinga izixhobo zentsimi ye-thermal ephezulu njengenkxaso. Sebenzisa izixhobo eziphucukileyo, khulisa iikristale eziphambili.
Ukusetyenziswa okungafanelekanga kwezinto ezinqamlekileyo, ezifana ne-graphite, i-graphite e-porous, i-tantalum carbide powder, njl njl kwintsimi eshushu iya kubangela iziphene ezifana nokunyuka kwekhabhoni. Ukongezelela, kwezinye izicelo, ukunyanzeliswa kwe-graphite ye-porous akwanele, kwaye imingxuma eyongezelelweyo iyafuneka ukunyusa ukugqithiswa. I-graphite ene-porous kunye ne-permeability ephezulu ijongene nemingeni yokucubungula, ukususwa komgubo, i-etching njalo njalo.
I-VET yazisa isizukulwana esitsha se-SiC crystal ekhulayo ye-thermal field, i-porous tantalum carbide. Isiqalo sehlabathi.
Amandla kunye nokuqina kwe-tantalum carbide kuphezulu kakhulu, kwaye ukuyenza i-porous ngumngeni. Ukwenza i-porous tantalum carbide ene-porosity enkulu kunye nokucoceka okuphezulu ngumngeni omkhulu. I-Hengpu Technology iye yasungula i-porous tantalum carbide ene-porosity enkulu, ene-porosity ephezulu ye-75%, ekhokela ihlabathi.
I-filtration yecandelo lesigaba segesi, ukulungiswa kwe-gradient yeqondo lokushisa lendawo, isalathiso sokuhamba kwezinto, ukulawula ukuvuza, njl., kunokusetyenziswa. Ingasetyenziswa kunye nenye i-tantalum carbide eqinileyo (i-compact) okanye i-tantalum carbide coating evela kwi-Hengpu Technology ukwenza amacandelo asekuhlaleni kunye nokuhamba okuhamba okuhlukeneyo.
Amanye amalungu angaphinda asetyenziswe.
Ixesha lokuposa: Jul-14-2023