I-Reaction-sintered silicon carbide yinto ebalulekileyo yobushushu obuphezulu, enamandla amakhulu, ukuqina okuphezulu, ukumelana nokunxiba okuphezulu, ukuxhathisa okuphezulu kwe-corrosion kunye nokumelana okuphezulu kwe-oxidation kunye nezinye iipropathi ezigqwesileyo, isetyenziswa kakhulu koomatshini, i-aerospace, ishishini lemichiza, amandla kunye nezinye. amasimi.
1. Ukulungiselela imathiriyeli ekrwada
Ukulungiswa kwezinto ezisebenzayo ze-silicon carbide ekrwada ubukhulu becala yi-carbon kunye ne-silicon powder, apho ikhabhoni inokusetyenziselwa izinto ezahlukeneyo ezine-carbon, ezifana ne-coke yamalahle, igraphite, i-charcoal, njl., i-silicon powder ihlala ikhethwa kunye nesuntswana. ubukhulu be-1-5μm obucocekileyo obuphezulu be-silicon powder. Okokuqala, i-carbon kunye ne-silicon powder zixutywe kwinqanaba elithile, zongeza umlinganiselo ofanelekileyo we-binder kunye ne-ejenti yokuhamba, kwaye uvuselela ngokulinganayo. Umxube ufakwa kwibhola yokusila ukuze uqhubele phambili ukuxubana okufanayo kunye nokusila de ubungakanani bamasuntswana bungaphantsi kwe-1μm.
2. Inkqubo yokubumba
Inkqubo yokubumba yenye yamanyathelo aphambili kwimveliso ye-silicon carbide. Iinkqubo zokubumba ezisetyenziswa ngokuqhelekileyo zicinezela ukubumba, ukubumba i-grouting kunye nokubumba okumileyo. Ukubunjwa kweCofa kuthetha ukuba umxube ufakwe kwi-mold kwaye yenziwe ngoxinzelelo lomatshini. Ukubumba i-Grouting kubhekisela ekuxubeni umxube kunye namanzi okanye i-solvent ye-organic, ukuyifaka kwi-mold ngokusebenzisa i-syringe phantsi kweemeko ze-vacuum, kunye nokwenza imveliso egqityiweyo emva kokuma. Uxinzelelo lwe-static lubhekiselele kumxube kwi-mold, phantsi kokhuseleko lwe-vacuum okanye i-atmosphere ye-static yokubumba uxinzelelo, ngokuqhelekileyo kuxinzelelo lwe-20-30MPa.
3. Inkqubo yeSintering
I-Sintering linyathelo eliphambili kwinkqubo yokwenziwa kwe-reaction-sintered silicon carbide. Ubushushu be-Sintering, ixesha lokutshisa, umoya we-sintering kunye nezinye izinto ziya kuchaphazela ukusebenza kwe-silicon carbide yokusabela. Ngokubanzi, ubushushu be-sintering ye-silicon carbide esebenzayo iphakathi kwe-2000-2400 ℃, ixesha lokuntywila lihlala liyiyure ezi-1 ukuya kwezi-3, kwaye umoya we-sintering uhlala une-inert, njenge-argon, i-nitrogen, njalo njalo. Ngexesha le-sintering, umxube uya kusabela kwikhemikhali ukwenza iikristale ze-silicon carbide. Ngelo xesha, ikhabhoni iya kusabela kunye neegesi emoyeni ukuvelisa iigesi ezifana ne-CO kunye ne-CO2, eya kuchaphazela ubuninzi kunye neempawu ze-silicon carbide. Ke ngoko, ukugcinwa kwemeko efanelekileyo ye-sintering kunye nexesha le-sintering kubaluleke kakhulu ekwenzeni i-react-sintered silicon carbide.
4. Inkqubo yasemva konyango
I-Reaction-sintered silicon carbide ifuna inkqubo yonyango emva kokwenziwa. Iinkqubo eziqhelekileyo emva konyango zisebenza ngomatshini, ukugaya, ukupolisha, i-oxidation kunye nokunye. Ezi nkqubo ziyilelwe ukuphucula ukuchaneka kunye nomgangatho womphezulu we-reaction-sintered silicon carbide. Phakathi kwabo, inkqubo yokugaya kunye nepolisha yindlela eqhelekileyo yokucubungula, enokuphucula ukugqiba kunye ne-flatness ye-silicon carbide surface. Inkqubo ye-oxidation inokwenza umaleko we-oxide ukwandisa ukuxhathisa kwe-oxidation kunye nokuzinza kweekhemikhali ze-react-sintered silicon carbide.
Ngamafutshane, ukwenziwa kwe-silicon carbide esebenzayo yinkqubo entsonkothileyo, idinga ukuqonda iintlobo ngeentlobo zetekhnoloji kunye neenkqubo, kubandakanya nokulungiswa kwezinto ezikrwada, inkqubo yokubumba, inkqubo ye-sintering kunye nenkqubo yasemva konyango. Kuphela ngokuqonda ngokupheleleyo obu buchwepheshe kunye neenkqubo ezinokuthi ziveliswe umgangatho ophezulu we-react-sintered silicon carbide ukukhawulelana neemfuno zemimandla eyahlukeneyo yesicelo.
Ixesha lokuposa: Jul-06-2023