1. Isishwankathelo sei-silicon carbide substrateiteknoloji yokucubungula
Eyangokui-silicon carbide substrate ukucutshungulwa kwamanyathelo abandakanya: ukugaya isangqa sangaphandle, ukucoca, i-chamfering, ukugaya, ukupolisha, ukucoca, njl njl. Ukuqhawula kuyinyathelo elibalulekileyo kwi-semiconductor substrate processing kunye nesinyathelo esibalulekileyo sokuguqula i-ingot kwi-substrate. Okwangoku, ukusika kwei-silicon carbide substratesikakhulu kukusika ucingo. I-Multi-wire slurry cutting yeyona ndlela ilungileyo yokusika iingcingo okwangoku, kodwa kusekho iingxaki zomgangatho ombi wokusika kunye nelahleko enkulu yokusika. Ukulahleka kocingo lokusika kuya kunyuka ngokunyuka kwesayizi ye-substrate, engafanelekangai-silicon carbide substrateabavelisi ukuphumeza ukuncitshiswa kweendleko kunye nokuphucula ukusebenza kakuhle. Kwinkqubo yokusikaI-8-intshi ye-silicon carbide substrates, ubume bomphezulu be-substrate efunyenwe ngocingo lokusika ihlwempu, kwaye iimpawu zamanani ezifana ne-WARP kunye ne-BOW azilungile.
Ukusika linyathelo eliphambili kwimveliso ye-semiconductor substrate. Ishishini lihlala lizama iindlela ezintsha zokusika, ezifana nokusika ucingo lwedayimani kunye nokuhluthwa kwelaser. Itekhnoloji yokuhluthwa kweLaser ifunwa kakhulu mva nje. Ukuqaliswa kobu buchwepheshe kunciphisa ilahleko yokusika kunye nokuphucula ukusika ukusebenza kakuhle kumgaqo wobugcisa. Isisombululo se-laser stripping sineemfuno eziphezulu kwinqanaba lokuzenzekelayo kwaye sidinga iteknoloji yokunciphisa ukusebenzisana nayo, ehambelana nesikhokelo sophuhliso lwexesha elizayo lwe-silicon carbide substrate processing. Isivuno sesilayi sokusika ucingo lodaka lwesintu luqhelekile luyi-1.5-1.6. Ukuqaliswa kwe-laser stripping technology kunokunyusa isivuno se-slice malunga ne-2.0 (jonga izixhobo ze-DISCO). Kwixesha elizayo, njengoko ukukhula kweteknoloji yokuhluthwa kwe-laser kunyuka, isivuno sesilayi sinokuphuculwa ngakumbi; Kwangaxeshanye, ukuhlutywa kwelaser kunokuphucula kakhulu ukusebenza kakuhle kokusika. Ngokutsho kophando lweemarike, inkokeli yemboniselo ye-DISCO inqumle iqhekeza malunga nemizuzu eyi-10-15, eyona nto isebenzayo ngakumbi kunodaka lwangoku lokusika i-60 imizuzu yesilayi.
Amanyathelo enkqubo yokusikwa kocingo lwesiko lwe-silicon carbide substrates ngala: ucingo olusikwa-rhabaxa lokusila-ukucolwa ngokucokisekileyo-ukupholisha ngokurhabaxa kunye nokupholiswa kakuhle. Emva kokuba inkqubo yokuqhawula i-laser ithathe indawo yokusika ucingo, inkqubo yokunciphisa isetyenziselwa ukubuyisela inkqubo yokugaya, eyanciphisa ilahleko yezilayi kunye nokuphucula ukusebenza kakuhle. Inkqubo yokuhluba i-laser yokusika, ukucola kunye nokupholiswa kwe-silicon carbide substrates yahlulwe yangamanyathelo amathathu: i-laser surface scanning-substrate stripping-ingot flattening: i-laser surface scanning kukusebenzisa i-ultrafast laser pulses ukusetyenzwa komphezulu we-ingot ukwenza uhlengahlengiso. umaleko ngaphakathi kwingot; ukuhluthwa kwe-substrate kukwahlula i-substrate ngaphezu komgangatho olungisiweyo ukusuka kwingot ngeendlela ezibonakalayo; ingot flattening kukususa umaleko olungisiweyo kumphezulu we ingot ukuqinisekisa ukucaba kobuso beingot.
Inkqubo yokuhlutha i-silicon carbide laser
2. Inkqubela phambili yamazwe ngamazwe kwi-laser stripping technology kunye neenkampani ezithatha inxaxheba kwishishini
Inkqubo yokuhluba i-laser yaqala yamkelwa ziinkampani zaphesheya kolwandle: Ngo-2016, i-DISCO yaseJapan yavelisa itekhnoloji entsha yokusika i-laser KABRA, eyenza umaleko wokwahlula kunye nokwahlula ii-wafers kubunzulu obuchaziweyo ngokuqhubekayo ngokufaka i-ingot nge-laser, enokusetyenziswa kwizinto ezahlukeneyo. iintlobo ze-SiC ingots. NgoNovemba ka-2018, i-Infineon Technologies yafumana i-Siltectra GmbH, isiqalo sokusika i-wafer, kwi-124 yezigidi ze-euro. Le yokugqibela iphuhlise inkqubo yeCold Split, esebenzisa itekhnoloji ye-laser enelungelo elilodwa lomenzi wokuchaza uluhlu lokucanda, ukwambatha izixhobo ezikhethekileyo zepolymer, inkqubo yokulawula ukupholisa uxinzelelo olubangelwa kukuxinana, izinto ezicatshulwe ngokuchanekileyo, kunye nokugaya kunye nokucoca ukufezekisa ukusika kwe-wafer.
Kwiminyaka yakutshanje, ezinye iinkampani zasekhaya ziye zangena kushishino lwezixhobo zokuhlutha i-laser: iinkampani eziphambili ziLaser ye-Han, i-Delong Laser, i-West Lake Instrument, i-Universal Intelligence, i-China Electronics Technology Group Corporation kunye ne-Institute of Semiconductors ye-Chinese Academy of Sciences. Phakathi kwazo, iinkampani ezidwelisiweyo i-Laser ye-Han kunye ne-Delong Laser sele ikwi-layout ixesha elide, kwaye iimveliso zabo ziqinisekiswa ngabathengi, kodwa inkampani inemigca emininzi yemveliso, kunye nezixhobo zokuqhawula i-laser enye yamashishini abo. Iimveliso zeenkwenkwezi ezikhulayo ezifana ne-West Lake Instrument ziphumelele ukuthunyelwa ngokusemthethweni; Intelligence Universal, China Electronics Technology Group Corporation 2, i-Institute of Semiconductors of Chinese Academy of Sciences kunye nezinye iinkampani baye bakhupha inkqubela izixhobo.
3. Izinto zokuqhuba kuphuhliso lwetekhnoloji yokuhlubula i-laser kunye nesingqisho sentengiso yentengiso
Ukwehliswa kwexabiso le-6-intshi ye-silicon carbide substrates kuqhuba uphuhliso lwetekhnoloji yokuhlubula i-laser: Okwangoku, ixabiso le-6-intshi ye-silicon carbide substrates lehle ngaphantsi kwe-4,000 ye-yuan / iqhekeza, isondela kwixabiso lexabiso labanye abavelisi. Inkqubo yokuhluthwa kwe-laser inezinga eliphezulu lesivuno kunye nenzuzo eyomeleleyo, eqhuba izinga lokungena kwi-laser stripping technology ukuze linyuke.
Ukucuthwa kwee-8-intshi ze-silicon carbide substrates kuqhuba uphuhliso lwetekhnoloji yokuhlubula i-laser: Ubukhulu be-8-intshi ye-silicon carbide substrates okwangoku yi-500um, kwaye iphuhlisa ukuya kubunzima obuyi-350um. Inkqubo yokusika ucingo ayisebenzi kwi-8-intshi ye-silicon carbide processing (i-substrate surface ayilungile), kwaye ixabiso le-BOW kunye ne-WARP liye lahla kakhulu. Ukuhluthwa kweLaser kuthathwa njengobuchwephesha obuyimfuneko bokusetyenzwa kwe-350um silicon carbide substrate processing, eqhuba izinga lokungena kwitekhnoloji yokuhlubula i-laser ukuba yonyuke.
Ulindelo lwemarike: Izibonelelo ze-SiC substrate laser stripping equipment zizuza ekwandisweni kwe-8-intshi yeSiC kunye nokwehliswa kweendleko ze-6-intshi yeSiC. Indawo yangoku yoshishino isondele, kwaye uphuhliso lweshishini luya kukhawuleziswa kakhulu.
Ixesha lokuposa: Jul-08-2024