Ukubekwa komphunga kwikhemikhali(CVD)yeyona teknoloji isetyenziswa kakhulu kwishishini le-semiconductor yokufaka izinto ezahlukeneyo, kubandakanywa uluhlu olubanzi lwezinto zokugquma, izixhobo ezininzi zetsimbi kunye nezixhobo zealloy zetsimbi.
I-CVD yitekhnoloji yemveli yokulungiselela ifilimu. Umgaqo wayo kukusebenzisa i-gaseous precursors ukubola amacandelo athile kwi-precursor ngokusebenzisa ukuphendula kweekhemikhali phakathi kwe-athomu kunye neeathomu, kwaye emva koko yenze ifilimu encinci kwi-substrate. Iimpawu ezisisiseko ze-CVD zezi: utshintsho lweekhemikhali (i-chemical reactions okanye i-thermal decomposition); zonke izinto kwifilimu zivela kwimithombo yangaphandle; abasabelayo kufuneka bathathe inxaxheba ekuphenduleni ngendlela yesigaba segesi.
Uxinzelelo oluphantsi lwekhemikhali yokubeka umphunga (LPCVD), iplasma ephuculweyo yokubeka umphunga wekhemikhali (PECVD) kunye neplasma ephezulu yoxinaniso lwekhemikhali yokubeka umphunga (HDP-CVD) ziitekhnoloji ezintathu eziqhelekileyo zeCVD, ezinomahluko omkhulu ekubekweni kwezinto, iimfuno zezixhobo, iimeko zenkqubo, njl. Oku kulandelayo yinkcazo elula kunye nokuthelekisa obu buchwepheshe buthathu.
1. I-LPCVD (i-CVD yoxinzelelo oluphantsi)
Umgaqo: Inkqubo ye-CVD phantsi kweemeko zoxinzelelo oluphantsi. Umgaqo wayo kukufaka igesi yokusabela kwigumbi lokuphendula phantsi kwe-vacuum okanye indawo yoxinzelelo oluphantsi, ukubola okanye ukusabela igesi ngobushushu obuphezulu, kwaye wenze ifilimu eqinileyo efakwe kwi-substrate surface. Ekubeni uxinzelelo oluphantsi lunciphisa ukungqubana kwegesi kunye nesiphithiphithi, ukufana kunye nomgangatho wefilimu uphuculwe. I-LPCVD isetyenziswa ngokubanzi kwi-silicon dioxide (LTO TEOS), i-silicon nitride (i-Si3N4), i-polysilicon (i-POLY), iglasi ye-phosphosilicate (BSG), i-borophosphosilicate glass (BPSG), i-polysilicon ye-doped, i-graphene, i-carbon nanotubes kunye nezinye iifilimu.
Iimbonakalo:
▪ Ubushushu benkqubo: ngokuqhelekileyo phakathi kwe-500 ~ 900 ° C, ubushushu benkqubo buphezulu;
▪ Uluhlu loxinzelelo lwegesi: indawo yoxinzelelo oluphantsi lwe-0.1 ~ 10 Torr;
▪ Umgangatho wefilimu: umgangatho ophezulu, ukufana kakuhle, ukuxinana okuhle, kunye neziphene ezimbalwa;
▪ Izinga lokubekwa: isantya esicothayo sokubekwa;
▪ Ukufana: ilungele isubstrates ezinkulu, ideposition efanayo;
Izinto eziluncedo kunye nezingeloncedo:
▪ Unokufaka iifilimu ezifanayo kunye nezixineneyo;
▪ Isebenza kakuhle kwiisayizi ezinkulu, ezilungele imveliso enkulu;
▪ Iindleko eziphantsi;
▪ Ubushushu obuphezulu, obungazifanelanga izinto ezingeva bubushushu;
▪ Izinga lokubekwa licotha kwaye imveliso iphantsi.
2. I-PECVD (i-Plasma Enhanced CVD)
Umgaqo: Sebenzisa iplasma ukuze uvule ukusabela kwesigaba segesi kumaqondo obushushu asezantsi, ionize kwaye ubolise iimolekyuli kwigesi yokusabela, emva koko ufake iifilimu ezibhityileyo kumphezulu we-substrate. Amandla eplasma anokunciphisa kakhulu ubushushu obufunekayo ekuphenduleni, kwaye inoluhlu olubanzi lwezicelo. Iifilimu zetsimbi ezahlukeneyo, iifilimu ze-inorganic kunye neefilimu eziphilayo zinokulungiswa.
Iimbonakalo:
▪ Ubushushu benkqubo: ngokuqhelekileyo phakathi kwe-200 ~ 400 ° C, iqondo lokushisa liphantsi kakhulu;
▪ Uluhlu loxinzelelo lwegesi: ngokuqhelekileyo amakhulu e-mTorr ukuya kwiiTorr ezininzi;
▪ Umgangatho wefilimu: nangona ukufana kwefilimu kulungile, ukuxinana kunye nomgangatho wefilimu awukho kakuhle njengeLPCVD ngenxa yeziphene ezinokuvezwa yiplasma;
▪ Izinga lokubekwa: izinga eliphezulu, ukusebenza kakuhle kwemveliso;
▪ Ukufana: ngaphantsi kancinane kune-LPCVD kwii-substrates ezinkulu;
Izinto eziluncedo kunye nezingeloncedo:
▪ Iifilim ezibhityileyo zinokufakwa kumaqondo obushushu asezantsi, afanele izinto ezingevayo kubushushu;
▪ Isantya sokubeka ngokukhawuleza, esilungele imveliso esebenzayo;
▪ Inkqubo eguquguqukayo, iimpawu zefilimu zinokulawulwa ngokulungelelanisa iiparamitha zeplasma;
▪ I-Plasma inokuvelisa iziphene zefilimu ezifana nemingxuma yokuqhawuka okanye ukungafanani;
▪ Xa kuthelekiswa neLPCVD, ukuxinana kwefilimu nomgangatho wayo umbi kancinane.
3. I-HDP-CVD (i-High Density Plasma CVD)
Umgaqo: Iteknoloji ekhethekileyo ye-PECVD. I-HDP-CVD (ekwaziwa ngokuba yi-ICP-CVD) inokuvelisa ingxinano yeplasma ephezulu kunye nomgangatho kunezixhobo ze-PECVD zemveli kumaqondo obushushu asezantsi. Ukongeza, i-HDP-CVD ibonelela ngokuphantse ukuzimela kwe-ion flux kunye nolawulo lwamandla, ukuphucula umsele okanye umngxuma wokuzalisa amandla okufuna ukubekwa kwefilimu, njengokutyatyekwa okuchasene nokukhanya, ukubekwa kwezinto eziphantsi kwe-dielectric rhoqo, njl.
Iimbonakalo:
▪ Ubushushu benkqubo: ubushushu begumbi ukuya kwi-300℃, ubushushu benkqubo buphantsi kakhulu;
▪ Uluhlu loxinzelelo lwegesi: phakathi kwe-1 kunye ne-100 mTorr, ngaphantsi kwe-PECVD;
▪ Umgangatho wefilimu: ukuxinana okuphezulu kweplasma, umgangatho ophezulu wefilimu, ukufana okuhle;
▪ Izinga ledeposition: izinga lokubekwa liphakathi kwe-LPCVD ne-PECVD, lingaphezulu kancinane kune-LPCVD;
▪ Ukufana: ngenxa yeplasma yoxinaniso oluphezulu, ukufana kwefilimu kuhle kakhulu, ifanele umphezulu omile okwe substrate;
Izinto eziluncedo kunye nezingeloncedo:
▪ Ukwazi ukufaka iifilimu ezikumgangatho ophezulu kumaqondo obushushu asezantsi, afaneleke kakhulu kwizinto ezingeva bubushushu;
▪ Ukufana kwefilimu okugqwesileyo, ukuxinana kunye nokugudiswa komphezulu;
▪ Ubuninzi beplasma obuphezulu buphucula ukufana kwendawo kunye neempawu zefilimu;
▪ Izixhobo ezintsonkothileyo kunye neendleko eziphezulu;
▪ Isantya sokubeka izinto sicotha, yaye amandla aphezulu eplasma asenokubangela umonakalo omncinane.
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Ixesha lokuposa: Dec-03-2024