Intshayelelo kwisizukulwana sesithathu semiconductor GaN kunye neteknoloji ye-epitaxial ehambelanayo

1. Isizukulwana sesithathu semiconductors

I-teknoloji ye-semiconductor yesizukulwana sokuqala yaphuhliswa ngokusekelwe kwizinto ze-semiconductor ezifana ne-Si kunye ne-Ge. Yisiseko sezinto eziphathekayo zokuphuhliswa kwee-transistors kunye neteknoloji yesekethe edibeneyo. Izixhobo ze-semiconductor zesizukulwana sokuqala zibeka isiseko soshishino lwe-elektroniki kwi-20th inkulungwane kwaye zizinto ezisisiseko zeteknoloji yesekethe edibeneyo.

Izixhobo ze-semiconductor zesizukulwana sesibini ziquka i-gallium arsenide, i-indium phosphide, i-gallium phosphide, i-indium arsenide, i-aluminium arsenide kunye ne-ternary compounds. Izixhobo ze-semiconductor zesizukulwana sesibini zisisiseko soshishino lolwazi lwe-optoelectronic. Ngesi siseko, amashishini anxulumeneyo afana nokukhanyisa, ukubonisa, i-laser, kunye ne-photovoltaics aphuhlisiwe. Zisetyenziswa ngokubanzi kwitekhnoloji yolwazi lwangoku kunye namashishini omboniso we-optoelectronic.

Izinto ezimele izinto ze-semiconductor zesizukulwana sesithathu ziquka i-gallium nitride kunye ne-silicon carbide. Ngenxa yomsantsa wabo webhendi ebanzi, isantya esiphezulu se-electron saturation drift, i-thermal conductivity ephezulu, kunye nokomelela kwebala lokuqhekeka okuphezulu, zizinto ezifanelekileyo zokulungiselela uxinano lwamandla aphezulu, i-high-frequency, kunye nelahleko ephantsi yezixhobo zombane. Phakathi kwazo, izixhobo zamandla e-silicon carbide zinezibonelelo zokuxinana kwamandla aphezulu, ukusetyenziswa kwamandla aphantsi, kunye nobukhulu obuncinci, kwaye zinethemba elibanzi lesicelo kwizithuthi zamandla amatsha, i-photovoltaics, uthutho lukaloliwe, idatha enkulu, kunye nezinye iindawo. Izixhobo ze-Gallium nitride RF zineenzuzo ze-frequency ephezulu, amandla aphezulu, i-bandwidth ebanzi, ukusetyenziswa kwamandla aphantsi kunye nobukhulu obuncinci, kwaye banamathuba okusebenza okubanzi kunxibelelwano lwe-5G, i-Intanethi yezinto, i-radar yezempi kunye nezinye iindawo. Ukongezelela, izixhobo zamandla ezisekelwe kwi-gallium nitride zisetyenziswe ngokubanzi kwintsimi ye-voltage ephantsi. Ukongeza, kwiminyaka yakutshanje, izinto ezikhulayo ze-gallium oxide kulindeleke ukuba zenze ukuhambelana kobugcisa kunye nobuchwepheshe obukhoyo be-SiC kunye ne-GaN, kwaye zibe nethuba lokufaka isicelo kwiindawo eziphantsi kunye ne-high-voltage fields.

Xa kuthelekiswa nezixhobo ze-semiconductor zesizukulwana sesibini, izixhobo ze-semiconductor zesizukulwana sesithathu zinobubanzi obubanzi be-bandgap (ububanzi be-bandgap ye-Si, into eqhelekileyo yezinto ze-semiconductor yesizukulwana sokuqala, malunga ne-1.1eV, ububanzi be-bandgap ye-GaAs, eqhelekileyo Izinto eziphathekayo ze-semiconductor yesizukulwana sesibini, malunga ne-1.42eV, kunye nobubanzi be-bandgap I-GaN, into eqhelekileyo yezinto ze-semiconductor yesizukulwana sesithathu, ingaphezulu kwe-2.3eV), ukuxhathisa okunamandla kwi-radiation, ukuchasana okunamandla ekuqhekekeni kombane, kunye nokumelana nokushisa okuphezulu. Izinto ze-semiconductor zesizukulwana sesithathu ezinobubanzi obubanzi be-bandgap zifanelekile ngokukodwa kwimveliso ye-radiation-resistant, high-frequency, high-power and high-integration-density electronic devices. Ukusetyenziswa kwabo kwizixhobo zerediyo zerediyo ye-microwave, ii-LED, iilaser, izixhobo zombane kunye namanye amasimi atsale umdla omkhulu, kwaye babonise amathemba ophuhliso olubanzi kunxibelelwano oluphathwayo, iigridi ezihlakaniphile, ukuhamba ngololiwe, izithuthi zamandla amatsha, i-elektroniki yabathengi, kunye ne-ultraviolet kunye neblue. -izixhobo zokukhanya eziluhlaza [1].