Inkqubo yokukhula ye-silicon ye-monocrystalline iqhutywe ngokupheleleyo kwintsimi ye-thermal. Intsimi efanelekileyo ye-thermal inceda ekuphuculeni umgangatho weekristali kwaye inokusebenza okuphezulu kwe-crystallization. Uyilo lwentsimi ye-thermal lunquma kakhulu utshintsho kwi-gradients kwiqondo lokushisa kwintsimi ye-thermal eguquguqukayo kunye nokuhamba kwegesi kwigumbi lomlilo. Umahluko kwizinto ezisetyenzisiweyo kwintsimi ye-thermal inquma ngokuthe ngqo ubomi benkonzo yentsimi ye-thermal. Intsimi ye-thermal engenangqiqo ayinzima nje ukukhula iikristale ezihlangabezana neemfuno zekhwalithi, kodwa ayikwazi ukukhula i-monocrystalline epheleleyo phantsi kweemfuno ezithile zenkqubo. Yiyo loo nto umzi-mveliso we-silicon we-silicon wokutsalwa ngokuthe ngqo uthatha uyilo lwendawo eshushu njengeyona teknoloji ingundoqo kwaye ityala abasebenzi abakhulu kunye nemithombo yezinto eziphathekayo kuphando kunye nophuhliso lwentsimi ye-thermal.
Inkqubo ye-thermal yenziwe ngezinto ezahlukeneyo zentsimi ye-thermal. Sikwazisa ngokufutshane kuphela izinto ezisetyenziswa kwintsimi ye-thermal. Ngokuphathelele ukuhanjiswa kweqondo lokushisa kwintsimi ye-thermal kunye nefuthe layo ekutsaleni i-crystal, asiyi kuhlalutya apha. Isixhobo se-thermal field sibhekiselele kwisakhiwo kunye nenxalenye yokufakelwa kwe-thermal kwigumbi lomlilo le-vacuum yokukhula kwekristale, eyimfuneko ekudaleni ukuhanjiswa kwamaqondo okufanelekileyo malunga ne-semiconductor yokunyibilika kunye nekristale.
1. Izinto zesakhiwo se-thermal field
Izinto ezisisiseko ezixhasayo kwindlela yokutsala ngokuthe ngqo ukukhula kwe-silicon ye-monocrystalline yi-graphite ephezulu. Izinto zegraphite zidlala indima ebaluleke kakhulu kwishishini lanamhlanje. Zingasetyenziswa njengamacandelo okwakhiwa kwentsimi yobushushu njengeizifudumezi, iityhubhu zesikhokelo, iminqamlezo, iibhubhu zokugquma, iitreyi ezinqamlekileyo, njl njl ekulungiseleleni i-silicon ye-monocrystalline ngendlela yeCzochralski.
Izinto zegraphitezikhethwa ngenxa yokuba zilula ukuzilungiselela kwimiqulu emikhulu, zinokucutshungulwa kwaye zixhathise ukushisa okuphezulu. Ikhabhoni ekwimo yedayimane okanye igraphite inendawo yokunyibilika ephezulu kunayo nayiphi na into okanye ikhompawundi. Iimathiriyeli zegraphite zomelele kakhulu, ngakumbi kumaqondo obushushu aphezulu, kwaye umbane kunye ne-thermal conductivity yazo ilungile. I-conductivity yayo yombane yenza ukuba ifaneleke njenge-aisifudumeziimpahla. Inomlinganiselo owanelisayo we-thermal conductivity, ovumela ukushisa okwenziwa yi-heater ukuba kuhanjiswe ngokulinganayo kwi-crucible kunye nezinye iindawo zokushisa. Nangona kunjalo, kumaqondo obushushu aphezulu, ngakumbi kwimigama emide, eyona ndlela iphambili yokuhambisa ubushushu yimitha.
Amalungu egraphite ekuqaleni ayenziwe ngamasuntswana amahle ekhabhoni axutywe ne-binder kwaye aqulunqwe ngokucofa okanye ngokucinezela isostatic. Iinxalenye zegraphite ezikumgangatho ophezulu zihlala zicinezelwa ngokwe-isostatically. Iqhekeza lilonke liqala lifakwe ikharbhoni kwaye emva koko lenziwe igraphiti kubushushu obuphezulu kakhulu, kufutshane ne3000°C. Amalungu acutshungulwa kwezi ziqwenga ziphela ahlala ecocwe kwi-atmosfera ene-chlorine kumaqondo obushushu aphezulu ukususa ukungcoliseka kwesinyithi ukuhlangabezana neemfuno zeshishini le-semiconductor. Nangona kunjalo, nasemva kokucocwa okufanelekileyo, inqanaba lokungcoliseka kwesinyithi liyimiyalelo emininzi yobukhulu obuphezulu kunoko kuvunyelwe kwi-silicon monocrystalline materials. Ngoko ke, kufuneka kuthathelwe ingqalelo kuyilo lwentsimi ye-thermal ukukhusela ukungcoliswa kwezi zixhobo ekungeneni kwi-melt okanye i-crystal surface.
Izinto zegraphite zingena kancinci, nto leyo eyenza kube lula ukuba intsimbi eseleyo ngaphakathi ifikelele kumphezulu. Ukongeza, isilicon monoxide ekhoyo kwirhasi yokucoca ejikeleze umphezulu wegraphite inokungena kwizinto ezininzi kwaye isabele.
Izifudumezi ze-silicon ze-monocrystalline zangaphambili zenziwe ngeentsimbi eziphikisayo ezifana ne-tungsten kunye ne-molybdenum. Ngokukhula okwandayo kobuchwepheshe bokulungiswa kwegraphite, iipropathi zombane zoqhagamshelo phakathi kwamacandelo egraphite zizinzile, kwaye izifudumezi ze-monocrystalline silicon eziko zithathe indawo ye-tungsten, i-molybdenum kunye nezinye izifudumezi eziphathekayo. Okwangoku, eyona nto isetyenziswa kakhulu kwigraphite yi-isostatic graphite. itekhnoloji yelizwe lam yokulungiselela igraphite isostatic ibuyele ngasemva, kwaye uninzi lwemathiriyeli yegraphite esetyenziswa kushishino lwasekhaya lwephotovoltaic isuka kumazwe angaphandle. Abavelisi begraphite ye-isostatic yangaphandle ikakhulu babandakanya iSGL yaseJamani, iTokai Carbon yaseJapan, iToyo Tanso yaseJapan, njl njl. KwiCzochralski monocrystalline silicon furnaces, izinto ezihlanganisiweyo zeC/C zisetyenziswa ngamanye amaxesha, kwaye sele ziqalisile ukusetyenziselwa ukwenza iibholiti, iinati, iibholiti, amantongomane, izibonda, imithwalo. iipleyiti kunye namanye amacandelo. Ikhabhoni/ikhabhoni (C/C) idityaniswe yicarbon fibre eqiniswe ngekhabhoni edityaniswe nekhabhoni enothotho lweepropathi ezigqwesileyo ezifana namandla athile aphezulu, imodyuli ethile ephezulu, i-coefficient yokwandiswa kwe-thermal ephantsi, ukuhanjiswa kombane kakuhle, ukomelela okuphezulu kokuqhekeka, ubunzima obuthile obuphantsi, ukuxhathisa ukothuka kwe-thermal, ukumelana ne-corrosion, kunye nokumelana nobushushu obuphezulu. Okwangoku, zisetyenziswa ngokubanzi kwi-aerospace, umdyarho, i-biomaterials kunye namanye amasimi njengezinto ezintsha zokumelana nobushushu obuphezulu. Okwangoku, ezona ntsilelo ziphambili ekuhlangatyezwane nazo ziimbumba zeC/C zasekhaya iseyimicimbi yeendleko kunye noshishino.
Kukho ezinye izinto ezininzi ezisetyenziselwa ukwenza amasimi ashushu. Igraphite eyomeleziweyo yeCarbon ineempawu ezingcono zoomatshini; kodwa ibiza kakhulu kwaye inezinye iimfuno zoyilo.I-silicon carbide (SiC)sisixhobo esingcono kunegraphite kwiinkalo ezininzi, kodwa kubiza kakhulu kwaye kunzima ukulungisa iinxalenye ezinomthamo omkhulu. Nangona kunjalo, iSiC ihlala isetyenziswa njengeCVD ukutyabekaukwandisa ubomi beendawo zegraphite ezivezwe kwirhasi ye-silicon monoxide eyonakalisayo, kwaye kunokunciphisa ungcoliseko oluvela kwigraphite. I-CVD eshinyeneyo ye-silicon carbide coating ikhusela ngokufanelekileyo ungcoliseko olungaphakathi kwi-microporous graphite material ukuba lufikelele kumphezulu.
Enye yi-CVD carbon, enokwenza umaleko oshinyeneyo ngaphezu kwendawo yegraphite. Ezinye izinto ezichasene nobushushu obuphezulu, ezifana ne-molybdenum okanye izinto ze-ceramic ezinokuthi zihlale kunye nokusingqongileyo, zingasetyenziselwa apho kungekho mngcipheko wokungcolisa ukunyibilika. Nangona kunjalo, iiseramics zeoksidi zithintelwe ngokubanzi ekusebenzeni kwazo kwimathiriyeli yegraphite kumaqondo obushushu aphezulu, kwaye zimbalwa ezinye iinketho ukuba ukugquma kuyafuneka. Enye yi-hexagonal boron nitride (ngamanye amaxesha ibizwa ngokuba yigraphite emhlophe ngenxa yeempawu ezifanayo), kodwa iimpawu zomatshini zimbi. I-Molybdenum isetyenziswa ngokubanzi ngokufanelekileyo kwiimeko eziphakamileyo zokushisa ngenxa yeendleko zayo eziphantsi, izinga eliphantsi lokusasazwa kwiikristale ze-silicon, kunye ne-coefficient ephantsi kakhulu yokwahlula malunga ne-5 × 108, evumela inani elithile lokungcoliswa kwe-molybdenum ngaphambi kokutshabalalisa isakhiwo se-crystal.
2. Izinto zokufakelwa kwe-thermal
Eyona nto isetyenziswa ngokuqhelekileyo imathiriyeli yokugquma yikhabhoni evakala ngeendlela ezahlukeneyo. Ikhabhoni evezwayo yenziwe ngeentsinga ezicekethekileyo, ezisebenza njenge-insulation kuba zithintela ukusasazeka kwemitha ye-thermal izihlandlo ezininzi kumgama omfutshane. Ikhabhoni ethambileyo evakalayo ilukwe ibe ngamashiti ezinto ezicekethekileyo, athi ke asikwe abe kwimilo efunekayo aze agotywe ngokuqinileyo abe kwiradiyasi efanelekileyo. Iifibers eziphilisiweyo zenziwe ngezinto zefayibha ezifanayo, kwaye i-carbon-containing binder isetyenziselwa ukudibanisa iintsinga ezisasaziweyo zibe yinto eqinileyo kunye nemile. Ukusetyenziswa komphunga wekhemikhali wokubekwa kwekhabhoni endaweni yesibophelelo kunokuphucula iimpawu zomatshini wento.
Ngokuqhelekileyo, umphezulu ongaphandle we-thermal insulation curing uvalwe nge-graphite coating eqhubekayo okanye i-foil ukunciphisa ukhukuliseko kunye nokuguga kunye nokungcoliswa kwe-particle. Ezinye iintlobo ze-carbon-based thermal insulation materials zikhona, ezifana ne-carbon foam. Ngokubanzi, izinto ezenziwe ngegraphiti ngokucacileyo zikhethwa kuba igraphitization inciphisa kakhulu indawo yomphezulu wefiber. Ukukhutshwa kwezi zixhobo zomgangatho ophezulu kuncitshiswe kakhulu, kwaye kuthatha ixesha elincinci ukupompa isithando somlilo kwi-vacuum efanelekileyo. Enye into edibeneyo yeC / C, eneempawu ezibalaseleyo ezifana nobunzima bokukhanya, ukunyamezela umonakalo omkhulu kunye namandla aphezulu. Isetyenziswa kwimimandla thermal endaweni iinxalenye graphite ngokuphawulekayo kunciphisa ukuphindaphinda iinxalenye graphite indawo, iphucula umgangatho monocrystalline kunye nozinzo imveliso.
Ngokohlelo lwemathiriyeli ekrwada, ikharbhoni ivakale inokohlulwa ibe yipolyacrylonitrile-based carbon felt, viscose-based carbon felt, kunye nepitch-based carbon felt.
I-polyacrylonitrile-based based-carbon felt inomxholo omkhulu wothuthu. Emva konyango lobushushu obuphezulu, ifayibha enye iba brittle. Ngexesha lokusebenza, kulula ukuvelisa uthuli ukungcolisa indawo yesithando somlilo. Ngelo xesha, i-fiber ingena lula kwi-pores kunye ne-respiratory tract yomzimba womntu, eyingozi kwimpilo yabantu. Ikhabhoni esekwe kwiViscose inomsebenzi olungileyo wokugquma ubushushu. Iyathamba ngokwentelekiso emva konyango lobushushu kwaye akukho lula ukwenza uthuli. Nangona kunjalo, i-cross-section ye-viscose-based fiber eluhlaza ayiqhelekanga, kwaye kukho i-grooves eninzi kumphezulu wefiber. Kulula ukuvelisa iigesi ezifana ne-C02 phantsi kwe-oxidizing atmosphere ye-CZ silicon furnace, ebangela imvula ye-oksijini kunye ne-carbon element kwizinto ze-silicon ze-monocrystalline. Abavelisi abakhulu baquka i-SGL yaseJamani kunye nezinye iinkampani. Okwangoku, eyona nto isetyenziswa kakhulu kwishishini le-semiconductor monocrystalline yi-pitch-based carbon felt, ene-thermal insulation performance embi kune-viscose-based based carbon, kodwa i-pitch-based based carbon ivakale inobunyulu obuphezulu kunye nokukhutshwa kothuli oluphantsi. Abavelisi baquka iKureha Chemical yaseJapan kunye negesi yeOsaka.
Ngenxa yokuba imilo yekhabhoni ivakale ayilungiswanga, akulula ukuyisebenzisa. Ngoku iinkampani ezininzi ziphuhlise imathiriyeli entsha yokugquma i-thermal esekwe kwi-carbon feel-curred carbon felt. Ikhabhoni enyangisiweyo, ekwabizwa ngokuba yi-hard feel, yikharbhoni evakala enemilo ethile kunye nepropathi ekwaziyo ukuzigcina emva kokuba ivalwe into ethambileyo ifakwe iresin, elaminethiweyo, yanyangwa kunye nekhabhoni.
Umgangatho wokukhula we-silicon ye-monocrystalline ichaphazeleka ngokuthe ngqo kwindawo ye-thermal, kunye ne-carbon fiber thermal insulation materials idlala indima ebalulekileyo kule ndawo. I-Carbon fiber thermal insulation ivakala inenzuzo enkulu kwishishini le-photovoltaic semiconductor ngenxa yenzuzo yeendleko, isiphumo esihle sokugquma kwe-thermal, uyilo olubhetyebhetye kunye nokumila okunokwenzeka ngokwezifiso. Ukongeza, i-carbon fiber hard thermal insulation ivakala iya kuba nesithuba esikhulu sophuhliso kwimakethi ye-thermal field material ngenxa yamandla ayo athile kunye nokusebenza okuphezulu. Sizibophelele kuphando kunye nophuhliso kwintsimi yezinto zokufakelwa kwe-thermal, kwaye ngokuqhubekayo siphucula ukusebenza kwemveliso ukukhuthaza ukuchuma kunye nophuhliso lweshishini le-photovoltaic semiconductor.
Ixesha lokuposa: Jun-12-2024