INDLELA YOKWENZA I-SILICON WAFER

INDLELA YOKWENZA I-SILICON WAFER

A iqhekezana lesonkasisilayi sesilicon esimalunga ne-1 millimeter ubukhulu esinomphezulu othe tyaba othe tyaba ngenxa yeenkqubo ezifunwa kakhulu ngokobuchwepheshe. Ukusetyenziswa okulandelayo kumisela ukuba yeyiphi inkqubo yokukhulisa ikristale ekufuneka isetyenziswe. Kwinkqubo yeCzochralski, umzekelo, i-silicon ye-polycrystalline iyancibilika kwaye i-crystal ye-pencil-thin imbewu ifakwe kwi-silicon etyhidiweyo. Ikristale yembewu ithi ke ijikelezwe ize itsalwe kancinane inyuke inyuke. I-colossus enzima kakhulu, i-monocrystal, iziphumo. Kunokwenzeka ukuba ukhethe iimpawu zombane ze-monocrystal ngokudibanisa iiyunithi ezincinci ze-dopants ezicocekileyo. Iikristale zifakwe ngokuhambelana neenkcukacha zabathengi kwaye ziphuculwe kwaye zinqunyulwe zibe ngamaqhekeza. Emva kwamanyathelo awongezelelweyo okuvelisa, umthengi ufumana ama-wafers akhe achaziweyo kwipakethe ekhethekileyo, evumela umthengi ukuba asebenzise i-wafer ngokukhawuleza kumgca wayo wemveliso.

INKQUBO CZOCHRALSKI

Namhlanje, inxalenye enkulu ye-silicon monocrystals ikhulile ngokwenkqubo yeCzochralski, ebandakanya ukunyibilika kwe-polycrystalline high-purity silicon kwi-quartz crucible hyperpure kunye nokongeza i-dopant (ngokuqhelekileyo i-B, P, As, Sb). Ikristale encinci yembewu ye-monocrystalline ifakwe kwi-silicon etyhidiweyo. Ikristale enkulu yeCZ emva koko iphuhla kule crystal ibhityileyo. Ulawulo oluchanekileyo lobushushu be-silicon etyhidiweyo kunye nokuhamba, ukujikeleza kwekristale kunye ne-crucible, kunye nesantya sokutsalwa kwekristale kumgangatho ophezulu kakhulu we-monocrystalline silicon ingot.

INDLELA YOKUFAKA ZONE

I-Monocrystals eyenziwe ngokwendlela yezowuni ye-float ilungele ukusetyenziswa kumacandelo e-semiconductor yamandla, njenge-IGBTs. I-cylindrical polycrystalline ingot ye-silicon ixhonywe phezu kwekhoyili ye-induction. I-radio frequency electromagnetic field inceda ukunyibilikisa isilicon ukusuka kwindawo esezantsi yentonga. Intsimi ye-electromagnetic ilawula ukuhamba kwe-silicon ngomngxuma omncinci kwi-coil induction kunye ne-monocrystal elele ngezantsi (indlela yendawo yokudada). I-doping, ngokuqhelekileyo kunye ne-B okanye i-P, ifezekiswa ngokudibanisa izinto zegesi.


Ixesha lokuposa: Jun-07-2021
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