I-crystal ye-SiC enye yi-Group IV-IV ye-compound semiconductor impahla eyenziwe ngezinto ezimbini, i-Si kunye ne-C, kumlinganiselo we-stoichiometric we-1: 1. Ukuqina kwayo kukwesibini emva kwedayimani.
Unciphiso lwekhabhoni yendlela yesilicon oxide yokulungiselela iSiC isekelwe ikakhulu kule fomula yokusabela kwemichiza:
Inkqubo yokusabela yokunciphisa i-carbon oxide ye-silicon oxide inzima kakhulu, apho ubushushu bokusabela buchaphazela ngokuthe ngqo imveliso yokugqibela.
Kwinkqubo yokulungiselela i-silicon carbide, izinto eziluhlaza zifakwa kuqala kwisithando somlilo. Isithando somlilo sokumelana siqukethe iindonga zokuphela kuzo zombini iziphelo, kunye ne-electrode yegraphite phakathi, kwaye i-furnace core idibanisa i-electrode ezimbini. Kwi-periphery ye-core ye-furnace, izinto eziphathekayo ezithatha inxaxheba ekuphenduleni zibekwe kuqala, kwaye ke izinto ezisetyenziselwa ukugcinwa kobushushu zibekwe kwi-periphery. Xa i-smelting iqala, isithando somlilo sinamandla kwaye ubushushu buphakama ukuya kuma-2,600 ukuya kwi-2,700 degrees Celsius. Amandla obushushu bombane agqithiselwa kwintlawulo ngomphezulu wesiseko sesithando somlilo, obangela ukuba kufudunyezwe kancinci kancinci. Xa ubushushu bomrhumo budlula i-1450 degrees Celsius, ikhemikhali isabela ukuvelisa isilicon carbide kunye negesi yecarbon monoxide. Njengoko inkqubo yokunyibilikisa iqhubeka, indawo yobushushu obuphezulu kwintlawulo iya kwanda ngokuthe ngcembe, kwaye inani le-silicon carbide eliveliswayo liya kwanda. I-Silicon carbide yenziwa ngokuqhubekayo esithandweni, kwaye ngokuphuma komphunga kunye nokuhamba, iikristale zikhula ngokuthe ngcembe kwaye ekugqibeleni ziqokelele kwiikristale zecylindrical.
Inxalenye yodonga lwangaphakathi lwekristale iqala ukubola ngenxa yobushushu obuphezulu obudlula i-2,600 degrees Celsius. Into ye-silicon eveliswe ngokubola iya kuphinda idityaniswe nento yekhabhoni kwintlawulo ukwenza i-silicon carbide entsha.
Xa i-chemical reaction ye-silicon carbide (SiC) igqityiwe kwaye isithando somlilo sipholile, inyathelo elilandelayo lingaqala. Okokuqala, iindonga zesithando somlilo zichithwa, kwaye ke izinto eziluhlaza kwisithando somlilo zikhethwa kwaye zihlelwe ngokwemigangatho. Izinto ezikhethiweyo zekrwada zityunyuziwe ukufumana izinto zegranular esizifunayo. Emva koko, ukungcola kwizinto eziluhlaza kususwa ngokuhlamba kwamanzi okanye ukucocwa ngezixazululo ze-asidi kunye ne-alkali, kunye nokuhlukana kwamagnetic kunye nezinye iindlela. Izinto ezikrwada ezicociweyo kufuneka zomiswe emva koko zihlolwe kwakhona, kwaye ekugqibeleni i-silicon carbide powder ecocekileyo inokufumaneka. Ukuba kukho imfuneko, ezi powders zinokuphinda ziqhubekeke ngokusetyenziswa kokwenene, njengokubunjwa okanye ukugaya okulungileyo, ukuvelisa i-silicon carbide powder.
Amanyathelo athile ngala alandelayo:
(1) Iimathiriyeli ekrwada
I-silicon eluhlaza ye-carbide umgubo omncinci uveliswa ngokutyumza i-silicon carbide eluhlaza. Ukwakhiwa kweekhemikhali ze-silicon carbide kufuneka kube mkhulu kune-99%, kwaye i-carbon yamahhala kunye ne-iron oxide kufuneka ibe ngaphantsi kwe-0.2%.
(2)Yophukile
Ukutyumza isanti ye-silicon carbide ibe ngumgubo ocolekileyo, iindlela ezimbini ngoku zisetyenziswa e-China, enye kukutyumzwa kwelitye lokusila lebhola emanzi, kwaye enye ityumza kusetyenziswa umgubo wokungqusha womoya.
(3)Ukwahlulwa ngokwemagnethi
Kungakhathaliseki ukuba yeyiphi indlela esetyenziselwa ukutyumza i-silicon carbide powder ibe ngumgubo ocolekileyo, ukwahlukana kwamagnetic okumanzi kunye nokwahlukana kwamagnetic kuqhelekileyo kusetyenziswa. Oku kungenxa yokuba akukho luthuli ngexesha lokwahlula kukazibuthe okumanzi, izinto zombane zahlulwa ngokupheleleyo, imveliso emva kokwahlulwa kwamagnetic iqulethe intsimbi encinci, kwaye i-silicon carbide powder ethatyathwe zizixhobo zemagneti nayo incinci.
(4)Ukwahlulwa kwamanzi
Umgaqo osisiseko wendlela yokwahlula amanzi kukusebenzisa isantya esahlukileyo sokumisa i-silicon carbide particles of different diameters in water to make particle size sluting.
(5) Ukuhlolwa kwe-ultrasonic
Ngophuhliso lwetekhnoloji ye-ultrasonic, sele isetyenziswe ngokubanzi kwi-ultrasonic screening ye-micro-powder teknoloji, enokusombulula iingxaki zokuvavanya ezifana ne-adsorption eqinile, i-agglomeration elula, umbane ophezulu we-static, ukucoleka okuphezulu, ukuxinana okuphezulu, kunye nokukhanya okucacileyo. .
(6)Ukuhlolwa komgangatho
Ukuhlolwa komgangatho we-Micropowder kubandakanya ukubunjwa kweekhemikhali, ukubunjwa kobungakanani bamasuntswana kunye nezinye izinto. Ngeendlela zokuhlola kunye nemigangatho yomgangatho, nceda ubhekisele kwi "Silicon Carbide Technical Conditions."
(7) Ukuvelisa uthuli lokusila
Emva kokuba i-micro powder ihlanganiswe kwaye ihlolwe, intloko yezinto eziphathekayo ingasetyenziselwa ukulungiselela umgubo wokugaya. Ukuveliswa komgubo wokugaya kunokunciphisa inkunkuma kunye nokwandisa ikhonkco lemveliso.
Ixesha lokuposa: May-13-2024