Ingaba iileya ze-epitaxial zibanceda njani izixhobo ze-semiconductor?

Imvelaphi yegama elithi epitaxial wafer

Okokuqala, masenze sandise ingcamango encinci: ukulungiswa kwe-wafer kubandakanya amakhonkco amabini amakhulu: ukulungiswa kwe-substrate kunye nenkqubo ye-epitaxial. I-substrate yi-wafer eyenziwe nge-semiconductor enye yezinto zekristale. I-substrate inokungena ngokuthe ngqo kwinkqubo yokuvelisa i-wafer ukuvelisa izixhobo ze-semiconductor, okanye inokucutshungulwa ngeenkqubo ze-epitaxial ukuvelisa i-epitaxial wafers. I-Epitaxy ibhekisela kwinkqubo yokukhulisa uluhlu olutsha lwe-crystal enye kwi-substrate ye-crystal enye ecutshungulwe ngokucokisekileyo ngokusika, ukugaya, ukupolisha, njl njl. izinto ezahlukeneyo (homogeneous) epitaxy okanye heteroepitaxy). Ngenxa yokuba umaleko omtsha wekristale uyakhula kwaye ukhule ngokwenqanaba lekristale le-substrate, ibizwa ngokuba yi-epitaxial layer (ubukhulu buqhele ukuba ziimicrons ezimbalwa, kuthatha isilicon njengomzekelo: intsingiselo yokukhula kwesilicon epitaxial ikwisilicon eyodwa. I-crystal substrate ene-crystal orientation ethile I-crystal ene-lattice structure intivity kunye ne-resistivity eyahlukileyo kunye nobukhulu kunye ne-crystal orientation njengoko i-substrate ikhulile), kwaye i-substrate ene-epitaxial layer ibizwa ngokuba yi-epitaxial wafer (epitaxial wafer = i-epitaxial layer + substrate). Xa isixhobo senziwe kwi-epitaxial layer, ibizwa ngokuba yi-positive epitaxy. Ukuba isixhobo senziwe kwi-substrate, ibizwa ngokuba yi-reverse epitaxy. Ngeli xesha, i-epitaxial layer idlala indima exhasayo kuphela.

Iqhekeza elikhazimlisiweyo

Iindlela zokukhula kwe-Epitaxial

I-Molecular beam epitaxy (MBE): Yiteknoloji yokukhula kwe-semiconductor epitaxial eyenziwa phantsi kweemeko ze-vacuum eziphezulu. Kobu buchule, izinto zomthombo zikhutshwa ngumphunga ngendlela yomqadi wee-athomu okanye iimolekyuli kwaye emva koko zifakwe kwi-crystalline substrate. I-MBE yitekhnoloji yokukhulisa ifilim echaneke kakhulu kwaye elawulekayo enokulawula ngokuthe ngqo ukutyeba kwezinto ezifakiweyo kwinqanaba leathom.
I-Metal organic CVD (MOCVD): Kwinkqubo ye-MOCVD, i-organic metal kunye ne-hydride gas N gas equlethe izinto ezifunekayo zinikezelwa kwi-substrate kwiqondo lokushisa elifanelekileyo, zihlanjululwe kwikhemikhali ukuvelisa izinto ezifunekayo ze-semiconductor, kwaye zifakwe kwi-substrate. kwi, ngelixa iikhompawundi eziseleyo kunye neemveliso zokusabela ziyakhutshwa.
I-Vapor phase epitaxy (VPE): I-epitaxy yesigaba se-Vapor yiteknoloji ebalulekileyo esetyenziswa ngokuqhelekileyo kwimveliso yezixhobo ze-semiconductor. Umgaqo osisiseko kukuthutha umphunga wezinto ezisisiseko okanye iikhompawundi kwirhasi yokuthwala, kunye nediphozithi yeekristale kwi-substrate ngokusabela kweekhemikhali.

Ziziphi iingxaki ezisombululwa yinkqubo ye-epitaxy?

Zininzi kuphela izixhobo zekristale ezingenakukwazi ukuhlangabezana neemfuno ezikhulayo zokwenza izixhobo ezahlukeneyo ze-semiconductor. Ke ngoko, ukukhula kwe-epitaxial, itekhnoloji yokukhulisa i-crystal enye encinci, yaphuhliswa ekupheleni kwe-1959.

Kwi-silicon, xa itekhnoloji yokukhula kwe-silicon epitaxial yaqala, yayilixesha elinzima ngokwenene kwimveliso ye-silicon ephezulu-frequency kunye ne-high-power transistors. Ngokombono wemigaqo ye-transistor, ukufumana i-frequency ephezulu kunye namandla aphezulu, i-voltage yokuqhawula indawo yokuqokelela kufuneka ibe phezulu kwaye ukuchasana kochungechunge kufuneka kube kuncinci, oko kukuthi, ukuhla kwamandla ombane kufuneka kube kuncinci. Eyangaphambili idinga ukuba i-resistiveivity yezinto kwindawo yokuqokelela kufuneka ibe phezulu, ngelixa ukugqibela kufuna ukuba ukuxhatshazwa kwezinto kwindawo yokuqokelela kufuneka kube phantsi. La maphondo mabini ayaphikisana. Ukuba ubukhulu bezinto kwindawo yokuqokelela buncitshiswe ukunciphisa ukuchasana kochungechunge, i-silicon wafer iya kuba yincinci kwaye ibuthathaka ukuba iqhutywe. Ukuba ukuxhathisa kwezinto eziphathekayo kuyancitshiswa, kuya kuphikisana nemfuno yokuqala. Nangona kunjalo, uphuhliso lweteknoloji ye-epitaxial luye lwaphumelela. busonjululwe obu bunzima.

Isisombululo: Khulisa i-high-resistivity epitaxial layer kwi-substrate ephantsi kakhulu yokumelana, kwaye wenze isixhobo kwi-epitaxial layer. Olu luhlu oluphezulu lwe-epitaxial luqinisekisa ukuba ityhubhu ine-voltage ephezulu yokuphuka, ngelixa i-substrate ephantsi yokumelana nayo iyanciphisa ukuchasana kwe-substrate, ngaloo ndlela inciphisa ukuhla kwe-voltage saturation, ngaloo ndlela ixazulula ukuphikisana phakathi kwezi zibini.

Ukongeza, itekhnoloji ye-epitaxy efana ne-epitaxy yesigaba somphunga kunye nesigaba solwelo se-GaAs kunye nezinye ii-III-V, II-VI kunye nezinye izixhobo ze-molecular compound semiconductor nazo ziye zaphuhliswa kakhulu kwaye ziye zaba sisiseko sezixhobo ezininzi ze-microwave, izixhobo ze-optoelectronic, amandla. Yinkqubo yetekhnoloji eyimfuneko ekuvelisweni kwezixhobo, ngakumbi usetyenziso oluyimpumelelo lwe-molecular beam kunye ne-metal organic vapor phase epitaxy technology kumaleko amancinci, ii-superlattices, quantum sources, superlattices strained, kunye ne-atomic-level thin-layer epitaxy. inyathelo elitsha kuphando lwe-semiconductor. Ukuphuhliswa "kobunjineli bebhanti yamandla" kwintsimi iye yabeka isiseko esiqinileyo.

Kwizicelo ezisebenzayo, izixhobo ezibanzi ze-semiconductor ze-bandgap zihlala zenziwe kwi-epitaxial layer, kwaye i-silicon carbide wafer ngokwayo isebenza kuphela njenge-substrate. Ngoko ke, ulawulo lwe-epitaxial layer yinxalenye ebalulekileyo ye-wide bandgap semiconductor industry.

Izakhono ezi-7 eziphambili kwitekhnoloji ye-epitaxy

1. Imigangatho ephezulu (ephantsi) yokumelana ne-epitaxial inokukhuliswa nge-epitaxially kwi-substrates ephantsi (phezulu) yokumelana.
2. I-N (P) yohlobo lwe-epitaxial layer inokukhuliswa nge-epitaxially kwi-substrate yohlobo lwe-P (N) ukwenza i-PN junction ngqo. Akukho ngxaki yembuyekezo xa usebenzisa indlela yokusabalalisa ukwenza i-PN junction kwi-crystal substrate enye.
3. Ngokudibanisa neteknoloji yemaski, ukukhula kwe-epitaxial okukhethiweyo kwenziwa kwiindawo ezikhethiweyo, ukudala iimeko zokuveliswa kweesekethe ezidibeneyo kunye nezixhobo ezinezakhiwo ezikhethekileyo.
4. Uhlobo kunye nokugxilwa kwe-doping kunokutshintshwa ngokweemfuno ngexesha lenkqubo yokukhula kwe-epitaxial. Utshintsho ekugxininiseni lunokutshintsha ngokukhawuleza okanye utshintsho olucothayo.
5. Inokukhula i-heterogeneous, i-multi-layered, i-multi-component compounds kunye ne-ultra-thin layers enezixhobo eziguquguqukayo.
6. Ukukhula kwe-Epitaxial kunokwenziwa kwiqondo lokushisa elingaphantsi kweqondo lokunyibilika kwezinto, izinga lokukhula lilawuleka, kwaye ukukhula kwe-epitaxial ye-atomic-level thickness inokufezekiswa.
7. Inokukhula i-crystal enye yezinto ezingenakutsalwa, ezifana ne-GaN, i-crystal layers ye-tertiary kunye ne-quaternary compounds, njl.