Igraphite enokwaleka kwe-TaC

I. Inkqubo yokuhlola ipharamitha

1. Inkqubo ye-TaCl5-C3H6-H2-Ar

2. Ubushushu bendawo:

Ngokwe-formula ye-thermodynamic, kubalwa ukuba xa ubushushu bungaphezu kwe-1273K, amandla e-Gibbs asimahla okusabela aphantsi kakhulu kwaye ukusabela kugqibelele. I-reaction eqhubekayo ye-KP inkulu kakhulu kwi-1273K kwaye inyuka ngokukhawuleza ngeqondo lokushisa, kwaye izinga lokukhula liyancipha ngokuthe ngcembe kwi-1773K.

Impembelelo kwi-morphology yomgangatho wokugquma: Xa iqondo lokushisa lingafanelekanga (liphezulu kakhulu okanye liphantsi kakhulu), ubuso bubonisa i-carbon morphology yamahhala okanye i-pores ekhululekile.

(1) Kwiqondo lokushisa eliphezulu, isantya sokuhamba kwee-athomu ezisebenzayo okanye amaqela asebenzayo ngokukhawuleza, okuya kubangela ukusabalalisa okungalinganiyo ngexesha lokuqokelela izinto eziphathekayo, kunye neendawo ezityebileyo kunye nezihlwempuzekileyo azikwazi ukuguquka ngokufanelekileyo, okubangelwa yi-pores.

(2) Kukho umahluko phakathi kwe-pyrolysis reaction rate ye-alkanes kunye nereyithi yokusabela yokunciphisa i-tantalum pentachloride. Ikhabhoni ye-pyrolysis igqithise kwaye ayinakudibaniswa ne-tantalum ngexesha, okubangela ukuba umphezulu uhlanganiswe ngekhabhoni.

Xa ubushushu bufanelekile, umphezulu weTaC ukutyabekaixinene.

I-TaCamaqhekeza ayancibilika kwaye adibanise omnye nomnye, ifom ye-crystal igqityiwe, kwaye umda wengqolowa uguquka ngokufanelekileyo.

3. Umlinganiselo weHydrojeni:

Ukongeza, kukho izinto ezininzi ezichaphazela umgangatho wokugquma:

-Umgangatho womphezulu wesubstrate

-Indawo yegesi yokubeka

-Iqondo lokufana kokuxutywa kwerhasi esabelayo

II. Iziphene eziqhelekileyo zetantalum carbide ukutyabeka

1. Ukwaleka ukuqhekeka kunye nokuxobula

Umgca wokwandiswa kwe-thermal coefficient yomgama we-CTE:

2. Uhlalutyo lwesiphene:

(1) Unobangela:

(2) Indlela yokulinganisa abalinganiswa

① Sebenzisa itekhnoloji yokwahluka kweX-reyi ukulinganisa ubunzima obushiyekileyo.

② Sebenzisa umthetho kaHu Ke ukuqikelela uxinzelelo olushiyekileyo.

(3) Iifomula ezinxulumeneyo

3.Ukuphucula ukuhambelana komatshini wokugquma kunye ne-substrate

(1) Umphezulu wokukhula kwe-in-situ

I-Thermal reaction deposition kunye ne-diffusion technology TRD

Inkqubo yetyuwa etyhidiweyo

Yenza lula inkqubo yemveliso

Yehlisa ubushushu bokusabela

Ixabiso eliphantsi ngokwentelekiso

Ukulungeleka kokusingqongileyo

Ifanelekile kwimveliso yemizi-mveliso emikhulu

(2) Ukugquma kwenguqu edibeneyo

Inkqubo yokudityaniswa

CVDinkqubo

Ukwaleka kwamacandelo amaninzi

Ukudibanisa izibonelelo zecandelo ngalinye

I-Flexibly ukulungelelanisa ukubunjwa kwengubo kunye nomlinganiselo

4. I-Thermal reaction deposition kunye ne-diffusion technology TRD

(1) Indlela yokusabela

Itekhnoloji ye-TRD ikwabizwa ngokuba yinkqubo yokufakela, esebenzisa i-boric acid-tantalum pentoxide-sodium fluoride-boron oxide-boron carbide system ukulungiselela.tantalum carbide ukutyabeka.

① I-boric acid etyhidiweyo inyibilikisa i-tantalum pentoxide;

② I-Tantalum pentoxide iyancitshiswa ibe yi-athomu ye-tantalum esebenzayo kwaye isasazeke kumphezulu wegraphite;

③ iiathom zetantalum ezisebenzayo zibhengezwa kumphezulu wegraphite kwaye zisabelane neeathom zekhabhoni ukwenza.tantalum carbide ukutyabeka.

(2) Isitshixo sokusabela

Uhlobo lwe-carbide coating kufuneka lwanelise imfuno yokuba ukubunjwa kwe-oxidation yamandla amahhala ento eyenza i-carbide iphezulu kune-boron oxide.

I-Gibbs yamandla amahhala e-carbide iphantsi ngokwaneleyo (kungenjalo, i-boron okanye i-boride inokwakheka).

I-Tantalum pentoxide yioksidi engathathi hlangothi. Kubushushu obuphezulu beboraksi etyhidiweyo, inokusabela ngealkaline oxide eyomeleleyo yesodium oxide ukwenza isodiyam tantalate, ngaloo ndlela inciphisa ubushushu bokusabela kokuqala.