Ukukhula okungundoqo kwe-sic imathiriyeli engundoqo

Xa i-silicon carbide crystal ikhula, "indalo" ye-interface yokukhula phakathi kweziko le-axial ye-crystal kunye nomda uhlukile, ukwenzela ukuba uxinzelelo lwe-crystal olusemphethweni luyanda, kwaye i-crystal edge kulula ukuvelisa "iziphene ezibanzi" ngenxa. kwimpembelelo ye-graphite stop ring "ikhabhoni", indlela yokusombulula ingxaki yomda okanye ukwandisa indawo esebenzayo yeziko (ngaphezu kwe-95%) sisihloko esibalulekileyo sobugcisa.

Njengoko iziphene ezinkulu ezinje nge "microtubules" kunye "nokufakwa" zilawulwa ngokuthe ngcembe lishishini, umngeni we-silicon carbide crystals ukuba "ikhule ngokukhawuleza, inde kwaye ityebe, kwaye ikhule", umphetho "ubuphene obubanzi" buphawuleka ngokungaqhelekanga, kwaye ukwanda kobubanzi kunye nobukhulu be-silicon carbide crystals, umphetho "weziphene ezibanzi" ziya kwandiswa ngobubanzi besikwere kwaye ubukhulu.

Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki yecala kunye nokuphucula umgangatho wokukhula kwekristale, enye yeendlela eziphambili zobugcisa "zokukhula ngokukhawuleza, ukukhula okutyebileyo kunye nokukhula". Ukuze kukhuthazwe ukuphuhliswa kobuchwephesha boshishino kunye nokusombulula ukuxhomekeka "kokungeniswa" kwezinto eziphambili, i-Hengpu iphumelele isombulule iteknoloji ye-tantalum carbide coating (CVD) kwaye yafikelela kwinqanaba eliphezulu lamazwe ngamazwe.

 Tantalum carbide (TaC) umaleko (2)(1)

I-Tantalum carbide yokugqoka i-TaC, ukusuka kumbono wokuqonda akunzima, kunye ne-sintering, i-CVD kunye nezinye iindlela kulula ukuzifumana. Indlela ye-Sintering, ukusetyenziswa kwe-tantalum carbide powder okanye i-precursor, ukongeza izithako ezisebenzayo (isinyithi ngokubanzi) kunye ne-ejenti yokudibanisa (i-polymer chain chain ngokubanzi), ifakwe kumphezulu we-graphite substrate sintered kwiqondo lokushisa eliphezulu. Ngendlela ye-CVD, i-TaCl5+H2+CH4 yafakwa kumphezulu we-graphite matrix ku-900-1500℃.

Nangona kunjalo, iiparamitha ezisisiseko ezinje ngekristali yokuqhelaniswa ne-tantalum carbide deposition, ubukhulu befilimu efanayo, ukukhutshwa koxinzelelo phakathi kokutyabeka kunye negraphite matrix, ukuqhekeka komphezulu, njl.njl., kungumngeni omkhulu. Ngokukodwa kwindawo yokukhula kwe-sic crystal, ubomi benkonzo obuzinzile yiparameter engundoqo, eyona nto inzima kakhulu.


Ixesha lokuposa: Jul-21-2023
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