Isicelo kunye nenkqubela phambili yophando ye-SiC yokugqoka kwi-carbon / carbon thermal field materials for monocrystalline silicon-2

1 Ukusetyenziswa kunye nenkqubela phambili yophando lwe-silicon carbide coating kwi-carbon / carbon thermal field materials

1.1 Isicelo kunye nenkqubela phambili yophando ekulungiseleleni i-crucible

Kwintsimi ye-crystal eyodwa ye-thermal, iikhabhoni / ikhabhoni crucibleisetyenziswa ikakhulu njengesitya sokuthwala sezinto zesilicon kwaye inxibelelana nei-quartz crucible, njengoko kuboniswe kuMfanekiso 2. Ukushisa okusebenzayo kwe-carbon / carbon crucible malunga ne-1450 ℃, ephantsi kokutshatyalaliswa kabini kwe-silicon eqinile (i-silicon dioxide) kunye ne-silicon vapor, kwaye ekugqibeleni i-crucible iba yincinci okanye i-ring ring crack. , okubangela ukungaphumeleli kwe-crucible.

I-composite coating ye-carbon / carbon composite crucible yalungiswa yinkqubo yokungena kwekhemikhali yomphunga kunye ne-in-situ reaction. Ukwaleka komdibaniso yenziwe ngesilicon carbide ukutyabeka (100 ~ 300μm), lesilicon ukutyabeka (10 ~ 20μm) kunye nesilicon nitride ukutyabeka (50 ~ 100μm), nto leyo enokuthi ngokufanelekileyo inhibe ukudleka kwesilicon umphunga kumphezulu wangaphakathi carbon/carbon composite. i-crucible. Kwinkqubo yokuvelisa, ukulahlekelwa kwe-carbon composite coated carbon / carbon composite crucible yi-0.04 mm kwisithando somlilo, kwaye ubomi benkonzo bunokufikelela kumaxesha angama-180.

Abaphandi basebenzise indlela yokusabela kweekhemikhali ukuvelisa i-silicon carbide coating efanayo kumphezulu we-carbon / carbon composite crucible phantsi kweemeko ezithile zobushushu kunye nokukhuselwa kwegesi ephetheyo, usebenzisa i-silicon dioxide kunye ne-silicon yesinyithi njengezinto eziluhlaza kwi-sintering ephezulu yokushisa. eziko. Iziphumo zibonisa ukuba unyango oluphezulu lweqondo lokushisa aluphuculi nje kuphela ukucoceka kunye namandla e-coating ye-sic, kodwa luphucula kakhulu ukunyanzeliswa komgangatho wekhabhoni / i-carbon composite, kunye nokuthintela ukubola komphezulu we-crucible yi-SiO vapor. kunye neeathom zeoksijini eziguquguqukayo kwiziko le-silicon ye-monocrystal. Ubomi benkonzo ye-crucible bunyuswe nge-20% xa kuthelekiswa nelo bhobho ngaphandle kwe-sic coating.

1.2 Isicelo kunye nenkqubela phambili yophando kwityhubhu yesikhokelo sokuhamba

I-cylinder yesikhokelo ibekwe ngaphezu kwe-crucible (njengoko kuboniswe kuMfanekiso 1). Kwinkqubo yokutsalwa kwekristale, umahluko weqondo lobushushu phakathi kwangaphakathi nangaphandle kwebala mkhulu, ngakumbi umphezulu ongezantsi ukufutshane nezinto ezityhidiweyo zesilicon, iqondo lobushushu lelona liphezulu, kwaye ukudleka komphunga wesilicon yeyona nto imbi kakhulu.

Abaphandi baqulunqa inkqubo elula kunye nokuchasana kwe-oxidation ye-tube yesikhokelo yokulwa ne-oxidation kunye nendlela yokulungiselela. Okokuqala, umaleko we-silicon carbide whisker wakhuliswa kwi-matrix yetyhubhu yesikhokelo, emva koko kwalungiswa umaleko wangaphandle we-silicon carbide, ukuze kwenziwe umaleko we-SiCw wenguqu phakathi kwe-matrix kunye ne-silicon eshinyeneyo ye-carbide layer. , njengoko kuboniswe kuMfanekiso 3. I-coefficient yokwandiswa kwe-thermal yayiphakathi kwe-matrix kunye ne-silicon carbide. Inokunciphisa ngokufanelekileyo uxinzelelo lwe-thermal olubangelwa ukungahambi kakuhle kwe-coefficient yokwandisa i-thermal.

Uhlalutyo lubonisa ukuba ngokunyuka komxholo we-SiCw, ubungakanani kunye nenani leentanda kwi-coating liyancipha. Emva kwe-oxidation ye-10h kwi-1100 ℃ emoyeni, izinga lokulahleka kobunzima besampulu yokugquma kuphela yi-0.87% ~ 8.87%, kunye nokumelana ne-oxidation kunye nokuxhatshazwa kwe-thermal ye-silicon carbide coating iphuculwe kakhulu. Yonke inkqubo yokulungiselela igqityezelwa ngokuqhubekayo nge-chemical vapor deposition, ukulungiswa kwe-silicon carbide coating kulula kakhulu, kwaye ukusebenza okubanzi kwe-nozzle yonke kuyaqiniswa.

Abaphandi bacebise indlela yokomelezwa kwe-matrix kunye nokugquma komhlaba wetyhubhu yegraphite ye-czohr monocrystal silicon. I-silicon carbide slurry efunyenweyo yatyatyekwa ngokulinganayo kumphezulu wetyhubhu yesikhokelo yegraphite enobunzima bokugquma obuyi-30 ~ 50 μm ngebrashi yokwaleka okanye indlela yokutshiza yokugquma, emva koko ibekwe kwiziko lobushushu obuphezulu bokusabela kwi-situ, ubushushu bokusabela. yaba 1850 ~ 2300 ℃, kunye nokugcinwa ubushushu 2 ~ 6h. Umaleko wangaphandle we-SiC ungasetyenziswa kwi-24 kwi-(60.96 cm) yesithando somlilo esisodwa sokukhula kwekristale, kwaye ubushushu bokusetyenziswa yi-1500 ℃, kwaye kufumaniseke ukuba akukho mgubo wokuqhekeka kunye nokuwa kumphezulu we-cylinder yesikhokelo segraphite emva kwe-1500h. .

1.3 Isicelo kunye nenkqubela phambili yophando kwi-insulation cylinder

Njengenye yezinto eziphambili zenkqubo ye-monocrystalline silicon thermal field, i-cylinder yokugquma isetyenziselwa ukunciphisa ilahleko yobushushu kunye nokulawula ukuthambekela kobushushu bommandla we-thermal field. Njengenxalenye exhasayo yomaleko wangaphakathi wokugquma eludongeni lweziko lekristale enye, ukubola komphunga wesilicon kukhokelela ekuweni kwe-slag kunye nokuqhekeka kwemveliso, ethi ekugqibeleni ikhokelele ekungaphumeleli kwemveliso.

Ukuze kwandiswe ngakumbi ukuxhathisa umphunga we-silicon ye-C/C-sic ityhubhu edibeneyo yokugquma, abaphandi babeka iimveliso zetyhubhu edibeneyo ye-C/C-sic elungiselelweyo kwisithando somlilo sekhemikhali, kwaye balungiselela ukutyabeka kwe-silicon eshinyeneyo kwi-carbide. umphezulu wemveliso yetyhubhu ehlanganisiweyo yeC/C-sic ngenkqubo yokubeka umphunga wekhemikhali. Iziphumo zibonisa ukuba, Inkqubo inokuthintela ngokufanelekileyo ukubola kwe-carbon fiber kwi-core of C / C-sic composite yi-silicon vapor, kunye nokuxhatshazwa kwe-corrosion ye-silicon vapor yanda ngama-5 ukuya kwamaxesha e-10 xa kuthelekiswa ne-carbon / carbon composite, kunye nobomi benkonzo ye-cylinder ye-insulation kunye nokukhuselwa kwendawo ye-thermal field iphuculwe kakhulu.

2.Isiphelo kunye nethemba

Ukugquma kwe-silicon carbideisetyenziswa kakhulu nangakumbi kwi-carbon/carbon thermal field materials ngenxa yokumelana ne-oxidation egqwesileyo kubushushu obuphezulu. Ngokunyuka kobungakanani bezinto ze-carbon / carbon thermal field ezisetyenziswa kwimveliso ye-silicon ye-monocrystalline, indlela yokuphucula ukufana kwe-silicon carbide coating kumphezulu we-thermal field materials kunye nokuphucula ubomi benkonzo ye-carbon / carbon thermal field materials ibe yingxaki engxamisekileyo. ukuba isonjululwe.

Kwelinye icala, ngophuhliso lweshishini le-silicon le-monocrystalline, imfuno ye-carbon-high-purity / carbon thermal field materials iyanda, kwaye ii-nanofibers ze-SiC nazo zikhuliswe kwimicu yekhabhoni yangaphakathi ngexesha lokuphendula. Ukukhutshwa kobunzima kunye nemilinganiselo yokunciphisa umgca weC / C-ZRC kunye neC / C-sic ZrC i-composites elungiselelwe yizilingo -0.32 mg / s kunye ne-2.57 μm / s, ngokulandelanayo. Ubunzima kunye nomgca wokuchithwa kwemilinganiselo ye-C / C-sic -ZrC edibeneyo -0.24mg / s kunye ne-1.66 μm / s, ngokulandelanayo. I-C/ C-ZRC idibanisa kunye ne-SiC nanofibers zineempawu ezingcono zokukhupha. Kamva, iziphumo zemithombo eyahlukeneyo yekhabhoni ekukhuleni kwe-SiC nanofibers kunye ne-mechanism ye-SiC nanofibers yokuqinisa iipropati ze-ablative ze-C / C-ZRC ezihlanganisiweyo ziya kufundwa.

I-composite coating ye-carbon / carbon composite crucible yalungiswa yinkqubo yokungena kwekhemikhali yomphunga kunye ne-in-situ reaction. Ukwaleka komdibaniso yenziwe ngesilicon carbide ukutyabeka (100 ~ 300μm), lesilicon ukutyabeka (10 ~ 20μm) kunye nesilicon nitride ukutyabeka (50 ~ 100μm), nto leyo enokuthi ngokufanelekileyo inhibe ukudleka kwesilicon umphunga kumphezulu wangaphakathi carbon/carbon composite. i-crucible. Kwinkqubo yokuvelisa, ukulahlekelwa kwe-carbon composite coated carbon / carbon composite crucible yi-0.04 mm kwisithando somlilo, kwaye ubomi benkonzo bunokufikelela kumaxesha angama-180.