Ukuveliswa kwamandla eSolar photovoltaic kuye kwaba lelona shishini lithembisayo lamandla amatsha ehlabathini. Xa kuthelekiswa ne-polysilicon kunye ne-amorphous silicon iiseli zelanga, i-silicon ye-monocrystalline, njengesixhobo sokuvelisa amandla e-photovoltaic, inomsebenzi ophezulu wokuguqulwa kwe-photoelectric kunye neenzuzo ezibalaseleyo zorhwebo, kwaye ibe yinto ehamba phambili yokuvelisa amandla e-solar photovoltaic. I-Czochralski (CZ) yenye yeendlela eziphambili zokulungiselela i-silicon ye-monocrystalline. Ukubunjwa kweCzochralski i-monocrystalline furnace ibandakanya inkqubo yesithando somlilo, inkqubo ye-vacuum, inkqubo yegesi, inkqubo ye-thermal field kunye nenkqubo yokulawula umbane. Inkqubo ye-thermal field yenye yezona meko zibaluleke kakhulu ekukhuleni kwe-silicon ye-monocrystalline, kunye nomgangatho we-silicon ye-monocrystalline ichaphazeleka ngokuthe ngqo ngokusasazwa kweqondo lokushisa kwintsimi ye-thermal.
Amacandelo e-thermal field ahlanganiswe ikakhulu ngezinto zekhabhoni (izinto zegraphite kunye nekhabhoni / i-carbon composite materials), ezahlulahlulwe zibe ziindawo ezixhasayo, iindawo ezisebenzayo, izinto zokufudumeza, iindawo ezikhuselayo, izinto zokugquma i-thermal, njl., ngokwemisebenzi yazo, njengoko kuboniswe kwi-Figure 1. Njengoko ubukhulu be-silicon ye-monocrystalline buqhubeka bukhula, iimfuno zesayizi zamacandelo e-thermal field nazo zanda. Izixhobo zekhabhoni/ikhabhoni ezidityanisiweyo ziba lukhetho lokuqala lwezixhobo zentsimi ezishushu zesilicon ye-monocrystalline ngenxa yokuzinza kwayo kunye neempawu ezibalaseleyo zoomatshini.
Kwinkqubo ye-silicon ye-czochralcian monocrystalline, ukunyibilika kwezinto zesilicon kuya kuvelisa umphunga wesilicon kunye ne-silicon etyhidiweyo, okukhokelela ekukhukulisekeni kwe-silicification ye-carbon / carbon thermal field materials, kunye neempawu zoomatshini kunye nobomi benkonzo ye-carbon / carbon thermal field materials are. ichaphazeleke kakhulu. Ke ngoko, indlela yokunciphisa ukhukuliseko lwe-silicification ye-carbon / carbon thermal field materials kunye nokuphucula ubomi babo benkonzo ibe yinkxalabo eqhelekileyo yabavelisi be-silicon ye-monocrystalline kunye nabavelisi bezinto ze-carbon / carbon thermal field.Ukugquma kwe-silicon carbideibe lukhetho lokuqala lokukhusela umphezulu we-carbon / carbon thermal field materials ngenxa yokumelana nokutshatyalaliswa kwe-thermal kunye nokumelana nokunxiba.
Kweli phepha, ukuqala kwi-carbon / carbon thermal field materials ezisetyenziswa kwimveliso ye-silicon ye-monocrystalline, iindlela eziphambili zokulungiselela, iingenelo kunye nokungalunganga kwe-silicon carbide coating zingeniswa. Ngesi siseko, isicelo kunye nenkqubela phambili yophando ye-silicon carbide yokwambathisa kwi-carbon / carbon thermal field materials ihlaziywa ngokweempawu ze-carbon / carbon thermal field materials, kunye neengcebiso kunye nezalathiso zophuhliso lokukhusela umphezulu we-carbon / carbon thermal field materials. zibekwe phambili.
1 Ukulungiselela iteknoloji yei-silicon carbide yokugquma
1.1 Indlela yokufakela
Indlela yokufakela isoloko isetyenziselwa ukulungisa ukutyabeka kwangaphakathi kwesilicon carbide kwiC/C-sic composite system material. Le ndlela kuqala isebenzisa umgubo oxutyiweyo ukusonga i-carbon/carbon composite material, emva koko iqhube unyango lobushushu kwiqondo elithile lobushushu. Uluhlu lweempendulo eziyinkimbinkimbi ze-physico-chemical reactions zenzeka phakathi komgubo oxutywe kunye nomphezulu wesampuli ukwenza isambatho. Inzuzo yayo kukuba inkqubo ilula, inkqubo enye kuphela inokulungiselela izinto ezidibeneyo ze-matrix ezixineneyo; Ubungakanani obuncinci utshintsho ukusuka kwi-preform ukuya kwimveliso yokugqibela; Ifanele nayiphi na ifayibha eyomeleziweyo; I-gradient ethile yokubunjwa inokuqulunqwa phakathi kwengubo kunye ne-substrate, edibeneyo kunye ne-substrate. Nangona kunjalo, kukho izinto ezingalunganga, ezifana nokuphendula kweekhemikhali kwiqondo lokushisa eliphezulu, elinokonakalisa i-fiber, kunye neempawu zomatshini we-carbon / carbon matrix ukwehla. Ukufana kwengubo kunzima ukulawula, ngenxa yezinto ezinjengomxhuzulane, okwenza ukuba iingubo zingalingani.
1.2 Indlela yokwaleka eludaka
Indlela yokugquma i-Slurry kukuxuba izinto zokugquma kunye ne-binder kumxube, i-brashi elinganayo phezu komphezulu we-matrix, emva kokumisa kwi-atmosphere ye-inert, i-specimen edibeneyo ifakwe kwiqondo lokushisa eliphezulu, kwaye i-coating efunekayo inokufumaneka. Iingenelo kukuba inkqubo ilula kwaye kulula ukuyisebenzisa, kwaye ubukhulu bokwambathisa kulula ukulawula; Ukungalungi kukuba kukho amandla okubambisana okungahambi kakuhle phakathi kwengubo kunye ne-substrate, kunye nokuxhatshazwa kwe-thermal shock of the coating ihlwempu, kwaye ukufana kwengubo kuphantsi.
1.3 Indlela yokusabela komphunga weChemical
Indlela ye-Chemical vapor reaction (CVR) yindlela yenkqubo ethi ikhuphe imathiriyeli yesilicon eqinileyo ibe ngumphunga wesilicon kwiqondo lobushushu elithile, emva koko umphunga wesilicon usasazeke ungene ngaphakathi naphezu komphezulu we-matrix, kwaye uphendule kwi-situ kunye nekhabhoni kwi-matrix ukuvelisa. i-silicon carbide. Iingenelo zayo ziquka umoya ofanayo kwiziko, izinga lokuphendula elingaguqukiyo kunye nobukhulu bezinto ezigqunyiweyo kuyo yonke indawo; Inkqubo ilula kwaye kulula ukuyisebenzisa, kwaye ubukhulu bengubo bunokulawulwa ngokutshintsha uxinzelelo lomphunga we-silicon, ixesha lokubeka kunye nezinye iiparamitha. Ukungalungi kukuba isampuli ichaphazeleka kakhulu yimeko kwiziko, kwaye uxinzelelo lomphunga we-silicon eziko alukwazi ukufikelela kwi-uniform yethiyori, okukhokelela kubunzima obungalinganiyo bokugquma.
1.4 Indlela yokubeka umphunga wekhemikhali
I-Chemical vapor deposition (CVD) yinkqubo apho ii-hydrocarbons zisetyenziswa njengomthombo wegesi kunye nococeko oluphezulu lwe-N2/Ar njengerhasi yokuthwala ukungenisa iigesi ezixubeneyo kwi-reactor yomphunga wekhemikhali, kwaye ii-hydrocarbons ziyabola, zenziwe, zisasazwe, zibhengezwe kwaye zisonjululwe phantsi. ubushushu obuthile kunye noxinzelelo lokwenza iifilimu eziqinileyo kumphezulu wekhabhoni / izinto ezihlanganisiweyo zekhabhoni. Inzuzo yayo kukuba ukuxinana kunye nokucoceka kwengubo kunokulawulwa; Ikwafanelekile nakwi-workpiece enemilo enzima ngakumbi; Ubume bekristale kunye ne-morphology yomhlaba wemveliso inokulawulwa ngokulungelelanisa imilinganiselo yokubeka. Ukungalungi kukuba izinga lokubeka liphantsi kakhulu, inkqubo inzima, ixabiso lemveliso liphezulu, kwaye kunokubakho iziphene zokugquma, ezifana neentanda, iziphene ze-mesh kunye neziphene zomhlaba.
Isishwankathelo, indlela yokufakela inqunyelwe kwiimpawu zayo zobuchwepheshe, ezilungele ukuphuhliswa nokuveliswa kwebhubhoratri kunye nezixhobo ezincinci; Indlela yokwambathisa ayifanelekanga kwimveliso yobuninzi ngenxa yokungaguquguquki kwayo. Indlela ye-CVR inokuhlangabezana nemveliso yobuninzi beemveliso ezinkulu, kodwa ineemfuno eziphezulu zezixhobo kunye nobuchwepheshe. Indlela ye-CVD yindlela efanelekileyo yokulungiselelaUkwaleka kwe-SIC, kodwa ixabiso layo liphezulu kunendlela ye-CVR ngenxa yobunzima bayo kulawulo lwenkqubo.
Ixesha lokuposa: Feb-22-2024