Ukuveliswa kwamandla eSolar photovoltaic kuye kwaba lelona shishini lithembisayo lamandla amatsha ehlabathini. Xa kuthelekiswa ne-polysilicon kunye ne-amorphous silicon iiseli zelanga, i-silicon ye-monocrystalline, njengesixhobo sokuvelisa amandla e-photovoltaic, inomsebenzi ophezulu wokuguqulwa kwe-photoelectric kunye neenzuzo ezibalaseleyo zorhwebo, kwaye ibe yinto ehamba phambili yokuvelisa amandla e-solar photovoltaic. I-Czochralski (CZ) yenye yeendlela eziphambili zokulungiselela i-silicon ye-monocrystalline. Ukubunjwa kweCzochralski i-monocrystalline furnace ibandakanya inkqubo yesithando somlilo, inkqubo ye-vacuum, inkqubo yegesi, inkqubo ye-thermal field kunye nenkqubo yokulawula umbane. Inkqubo ye-thermal field yenye yezona meko zibaluleke kakhulu ekukhuleni kwe-silicon ye-monocrystalline, kunye nomgangatho we-silicon ye-monocrystalline ichaphazeleka ngokuthe ngqo kukuhanjiswa kweqondo lokushisa kwintsimi ye-thermal.
Amacandelo e-thermal field ahlanganiswe ikakhulu ngezinto zekhabhoni (izinto zegraphite kunye nekhabhoni / i-carbon composite materials), ezahlulahlulwe zibe ziindawo ezixhasayo, iindawo ezisebenzayo, izinto zokufudumeza, iindawo ezikhuselayo, izinto zokugquma i-thermal, njl., ngokwemisebenzi yazo, njengoko kuboniswe kwi-Figure 1. Njengoko ubukhulu be-silicon ye-monocrystalline buqhubeka bukhula, iimfuno zesayizi zamacandelo e-thermal field nazo zanda. Izixhobo zekhabhoni/ikhabhoni ezidityanisiweyo ziba lukhetho lokuqala lwezixhobo zentsimi ezishushu zesilicon ye-monocrystalline ngenxa yokuzinza kwayo kunye neempawu ezibalaseleyo zoomatshini.
Kwinkqubo ye-silicon ye-czochralcian monocrystalline, ukunyibilika kwezinto zesilicon kuya kuvelisa umphunga wesilicon kunye ne-silicon etyhidiweyo, okukhokelela ekukhukulisekeni kwe-silicification ye-carbon / carbon thermal field materials, kunye neempawu zoomatshini kunye nobomi benkonzo ye-carbon / carbon thermal field materials are. ichaphazeleke kakhulu. Ke ngoko, indlela yokunciphisa ukhukuliseko lwe-silicification ye-carbon / carbon thermal field materials kunye nokuphucula ubomi babo benkonzo ibe yinkxalabo eqhelekileyo yabavelisi be-silicon ye-monocrystalline kunye nabavelisi bezinto ze-carbon / carbon thermal field.Ukugquma kwe-silicon carbideibe lukhetho lokuqala lokukhusela umphezulu we-carbon / carbon thermal field materials ngenxa yokumelana nokutshatyalaliswa kwe-thermal kunye nokumelana nokunxiba.
Kweli phepha, ukuqala kwi-carbon / carbon thermal field materials ezisetyenziswa kwimveliso ye-silicon ye-monocrystalline, iindlela eziphambili zokulungiselela, iingenelo kunye nokungalunganga kwe-silicon carbide coating zingeniswa. Ngesi siseko, isicelo kunye nenkqubela phambili yophando ye-silicon carbide yokwambathisa kwi-carbon / carbon thermal field materials ihlaziywa ngokweempawu ze-carbon / carbon thermal field materials, kunye neengcebiso kunye nezalathiso zophuhliso lokukhusela umphezulu we-carbon / carbon thermal field materials. zibekwe phambili.
1 Ukulungiselela iteknoloji yei-silicon carbide yokugquma
1.1 Indlela yokufakela
Indlela yokufakela isoloko isetyenziselwa ukulungisa ukutyabeka kwangaphakathi kwesilicon carbide kwiC/C-sic composite system material. Le ndlela kuqala isebenzisa umgubo oxutyiweyo ukusonga i-carbon/carbon composite material, emva koko iqhube unyango lobushushu kwiqondo elithile lobushushu. Uluhlu lweempendulo eziyinkimbinkimbi ze-physico-chemical reactions zenzeka phakathi komgubo oxutywe kunye nomphezulu wesampuli ukwenza isambatho. Inzuzo yayo kukuba inkqubo ilula, inkqubo enye kuphela inokulungiselela izinto ezidibeneyo ze-matrix ezixineneyo; Ubungakanani obuncinci utshintsho ukusuka kwi-preform ukuya kwimveliso yokugqibela; Ifanele nayiphi na ifayibha eyomeleziweyo; I-gradient ethile yokubunjwa inokuqulunqwa phakathi kwengubo kunye ne-substrate, edibeneyo kunye ne-substrate. Nangona kunjalo, kukho izinto ezingalunganga, ezifana nokuphendula kweekhemikhali kwiqondo lokushisa eliphezulu, elinokonakalisa i-fiber, kunye neempawu zomatshini we-carbon / carbon matrix ukwehla. Ukufana kwengubo kunzima ukulawula, ngenxa yezinto ezinjengomxhuzulane, okwenza ukuba iingubo zingalingani.
1.2 Indlela yokwaleka eludaka
Indlela yokugquma i-Slurry kukuxuba izinto zokugquma kunye ne-binder kumxube, i-brashi elinganayo phezu komphezulu we-matrix, emva kokumisa kwi-atmosphere ye-inert, i-specimen edibeneyo ifakwe kwiqondo lokushisa eliphezulu, kwaye i-coating efunekayo inokufumaneka. Iinzuzo kukuba inkqubo ilula kwaye kulula ukuyisebenzisa, kunye nobukhulu bokugquma kulula ukulawula; Ukungalungi kukuba kukho amandla okubambisana okungahambi kakuhle phakathi kwengubo kunye ne-substrate, kunye nokuxhatshazwa kwe-thermal shock of the coating ihlwempu, kwaye ukufana kwengubo kuphantsi.
1.3 Indlela yokusabela komphunga weChemical
Umphunga wekhemikhali ukusabela(CVR) Indlela yinkqubo yenkqubo ethi ikhuphe imathiriyeli yesilicon eqinileyo ibe ngumphunga wesilicon kwiqondo lobushushu elithile, kwaye ke umphunga wesilicon usasazeke ngaphakathi kunye nomphezulu we-matrix, kwaye uphendule kwi-situ kunye nekhabhoni kwi-matrix ukuvelisa isilicon carbide. Iingenelo zayo ziquka umoya ofanayo kwiziko, izinga lokuphendula elingaguqukiyo kunye nobukhulu bezinto ezigqunyiweyo kuyo yonke indawo; Inkqubo ilula kwaye kulula ukuyisebenzisa, kwaye ubukhulu bengubo bunokulawulwa ngokutshintsha uxinzelelo lomphunga we-silicon, ixesha lokubeka kunye nezinye iiparamitha. Ukungalungi kukuba isampuli ichaphazeleka kakhulu yimeko kwiziko, kwaye uxinzelelo lomphunga we-silicon eziko alukwazi ukufikelela kwi-uniform yethiyori, okukhokelela kubunzima obungalinganiyo bokugquma.
1.4 Indlela yokubeka umphunga wekhemikhali
I-Chemical vapor deposition (CVD) yinkqubo apho ii-hydrocarbons zisetyenziswa njengomthombo wegesi kunye nococeko oluphezulu lwe-N2/Ar njengerhasi yokuthwala ukungenisa iigesi ezixubeneyo kwi-reactor yomphunga wekhemikhali, kwaye ii-hydrocarbons ziyabola, zenziwe, zisasazwe, zibhengezwe kwaye zisonjululwe phantsi. ubushushu obuthile kunye noxinzelelo lokwenza iifilimu eziqinileyo kumphezulu wekhabhoni / izinto ezihlanganisiweyo zekhabhoni. Inzuzo yayo kukuba ukuxinana kunye nokucoceka kwengubo kunokulawulwa; Ikwalungele umsebenzi-iqhekeza elinemilo enzima ngakumbi; Ubume bekristale kunye ne-morphology yomhlaba wemveliso inokulawulwa ngokulungelelanisa imilinganiselo yokubeka. Ukungalungi kukuba izinga lokubeka liphantsi kakhulu, inkqubo inzima, ixabiso lemveliso liphezulu, kwaye kunokubakho iziphene zokugquma, ezifana neentanda, iziphene ze-mesh kunye neziphene zomhlaba.
Isishwankathelo, indlela yokufakela inqunyelwe kwiimpawu zayo zobuchwepheshe, ezilungele ukuphuhliswa nokuveliswa kwebhubhoratri kunye nezixhobo ezincinci; Indlela yokwambathisa ayifanelekanga kwimveliso yobuninzi ngenxa yokungaguquguquki kwayo. Indlela ye-CVR inokuhlangabezana nemveliso yobuninzi beemveliso ezinkulu, kodwa ineemfuno eziphezulu zezixhobo kunye nobuchwepheshe. Indlela ye-CVD yindlela efanelekileyo yokulungiselelaUkwaleka kwe-SIC, kodwa ixabiso layo liphezulu kunendlela ye-CVR ngenxa yobunzima bayo kulawulo lwenkqubo.
Ixesha lokuposa: Feb-22-2024