Uhlalutyo lwezixhobo zokubeka ifilimu ezibhityileyo - imigaqo kunye nokusetyenziswa kwezixhobo ze-PECVD/LPCVD/ALD

Ukubekwa kwefilim ebhityileyo kukugquma umaleko wefilimu kwizinto ezingundoqo ze-semiconductor. Le filimu inokwenziwa ngezinto ezahlukeneyo, ezifana ne-silicon dioxide, i-semiconductor polysilicon, i-metal copper, njl.

Ukusuka kumbono wenkqubo yokwenziwa kwe-chip ye-semiconductor, ibekwe kwinkqubo yangaphambili.

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Inkqubo yokulungiselela ifilim ebhityileyo inokohlulwa ibe ngamacandelo amabini ngokwendlela yokwenza ifilimu: ukubekwa komphunga womzimba (PVD) kunye nokubekwa komphunga wekhemikhali.(CVD), phakathi kwazo izixhobo zenkqubo ye-CVD zithatha umlinganiselo ophezulu.

I-Physical vapor deposition (PVD) ibhekiselele kwi-vaporization yobuso bomthombo wezinto kunye nokubekwa kumphezulu we-substrate ngokusebenzisa i-low-pressure gas / plasma, kubandakanywa i-evaporation, i-sputtering, i-ion beam, njl.;

Ukubekwa komphunga kwikhemikhali (CVD) ibhekisa kwinkqubo yokufaka ifilimu eyomeleleyo kumphezulu we-silicon wafer ngokusabela kwekhemikhali yomxube werhasi. Ngokweemeko zokusabela (uxinzelelo, i-precursor), yahlulwe kuxinzelelo lwe-atmosphericCVD(APCVD), uxinzelelo oluphantsiCVD(LPCVD), i-plasma ephuculweyo ye-CVD (PECVD), i-high density plasma CVD (HDPCVD) kunye ne-atomic layer deposition (ALD).

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I-LPCVD: I-LPCVD inobuchule obungcono bokugubungela, ukubunjwa okulungileyo kunye nokulawulwa kwesakhiwo, izinga eliphezulu lokubeka kunye nemveliso, kwaye inciphisa kakhulu umthombo wongcoliseko lwamasuntswana. Ukuxhomekeka kwizixhobo zokufudumeza njengomthombo wokushisa ukugcina ukusabela, ukulawula ubushushu kunye noxinzelelo lwegesi kubaluleke kakhulu. Isetyenziswa kakhulu kwiPoly layer yokwenziwa kweeseli zeTopCon.

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I-PECVD: I-PECVD ixhomekeke kwi-plasma eyenziwe yi-radio frequency induction ukuphumeza ubushushu obuphantsi (ngaphantsi kwe-450 degrees) yenkqubo yokubeka ifilimu encinci. Ukubekwa kweqondo lobushushu eliphantsi yeyona nto iluncedo, ngaloo ndlela kusindisa amandla, ukunciphisa iindleko, ukonyusa umthamo wemveliso, kunye nokunciphisa ukubola kobomi babathwali abancinci kwiziphaluka zesilicon ezibangelwa bubushushu obuphezulu. Ingasetyenziswa kwiinkqubo zeeseli ezahlukeneyo ezifana ne-PERC, TOPCON, kunye ne-HJT.

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I-ALD: Ukufana kwefilimu elungileyo, exineneyo kwaye ngaphandle kwemingxunya, iimpawu zokugubungela inyathelo elifanelekileyo, zinokuqhutywa kwiqondo lobushushu eliphantsi (igumbi lobushushu-400 ℃), inokulawula ngokulula nangokuchanekileyo ubungqingqwa befilimu, isetyenziswa ngokubanzi kwiinxalenye zeemilo ezahlukeneyo, kwaye ayifuni kulawula ukufana kokuhamba kwe-reactant. Kodwa into engalunganga kukuba isantya sokwenza ifilimu sicotha. Njenge-zinc sulfide (ZnS) i-light-emitting layer esetyenziselwa ukuvelisa i-nanostructured insulators (Al2O3 / TiO2) kunye nemiboniso ye-electroluminescent yefilimu encinci (TFEL).

I-atomic layer deposition (ALD) yinkqubo yokugquma ivacuum eyenza ifilim ebhityileyo kumphezulu we substrate umaleko ngokomaleko omnye weathom. Ekuqaleni kwe-1974, i-Finnish yefiziksi yezinto eziphathekayo uTuomo Suntola yavelisa le teknoloji kwaye yaphumelela i-1 yezigidi ze-euro ye-Millennium Technology Award. Itekhnoloji ye-ALD yayisetyenziselwa ukuboniswa kwe-flat-panel electroluminescent, kodwa ayizange isetyenziswe ngokubanzi. Kwakungekho kwasekuqaleni kwenkulungwane yama-21 apho itekhnoloji ye-ALD yaqala ukwamkelwa lishishini le-semiconductor. Ngokwenza imathiriyeli ye-ultra-thin high-dielectric ukuthatha indawo ye-silicon oxide yemveli, iyisombulule ngempumelelo ingxaki yangoku evuzayo ebangelwa kukuncitshiswa kobubanzi bomgca we-transistors enesiphumo sentsimi, ikhuthaza uMthetho kaMoore ukuba uphuhlise ngakumbi ukuya kububanzi bemigca emincinci. UGqr. Tuomo Suntola ukhe wathi i-ALD inokunyusa kakhulu ukudibanisa kwamacandelo.

Idatha yoluntu ibonisa ukuba iteknoloji ye-ALD yaqulunqwa nguDkt. Tuomo Suntola wase-PICOSUN e-Finland ngo-1974 kwaye sele isungulwe kwamanye amazwe, njengefilimu ephezulu ye-dielectric kwi-45/32 nanometer chip ephuhliswe yi-Intel. E-China, ilizwe lam lazisa itekhnoloji ye-ALD ngaphezulu kweminyaka engama-30 kamva kunamazwe angaphandle. Ngo-Okthobha ka-2010, iPICOSUN eFinland kunye neYunivesithi yaseFudan yabamba intlanganiso yokuqala yasekhaya yokutshintshiselana nge-ALD, yazisa ubuchwepheshe be-ALD eChina okokuqala.
Xa kuthelekiswa nokubekwa komphunga wekhemikhali (CVD) kunye ne-Physical vapor deposition (PVD), iinzuzo ze-ALD zigqwesile ukuthotyelwa kwemilinganiselo emithathu, ukufana kwefilimu yendawo enkulu, kunye nokulawulwa kobunzima obuchanekileyo, obufanelekileyo ekukhuleni iifilimu ezi-ultra-thin kwimilo enzima yomhlaba kunye nezakhiwo zomlinganiselo ophezulu.

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-Umthombo wedatha: Iqonga lokulungisa iMicro-nano yeYunivesithi yaseTsinghua—
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Ngexesha le-post-Moore, ukuntsonkotha kunye nomthamo wenkqubo yokwenza i-wafer iphuculwe kakhulu. Ukuthatha ii-chips ze-logic njengomzekelo, ngokunyuka kwenani lemigca yokuvelisa kunye neenkqubo ezingaphantsi kwe-45nm, ngokukodwa imigca yokuvelisa kunye neenkqubo ze-28nm nangaphantsi, iimfuno zokugubungela ubukhulu kunye nolawulo oluchanekileyo luphezulu. Emva kokuqaliswa kweteknoloji yokuvezwa kwezinto ezininzi, inani lamanyathelo enkqubo ye-ALD kunye nezixhobo ezifunekayo ziye zanda kakhulu; kwintsimi yeetshiphu zememori, inkqubo yokuvelisa i-mainstream iye yavela kwi-2D NAND ukuya kwi-3D ye-NAND isakhiwo, inani leengqimba zangaphakathi liye laqhubeka likhula, kwaye amacandelo abonise ngokuthe ngcembe ubuninzi obuphezulu, ubungakanani obuphezulu, kunye nendima ebalulekileyo. I-ALD iqalile ukuvela. Ngokombono wophuhliso lwexesha elizayo lwe-semiconductors, itekhnoloji ye-ALD iya kudlala indima ebaluleke kakhulu kwixesha le-post-Moore.

Ngokomzekelo, i-ALD kuphela kwetekhnoloji yokubeka enokuthi ihlangabezane ne-coverage kunye neemfuno zefilimu yokusebenza kwezakhiwo eziyinkimbinkimbi ze-3D (ezifana ne-3D-NAND). Oku kunokubonwa ngokucacileyo kumzobo ongezantsi. Ifilimu efakwe kwi-CVD A (eluhlaza okwesibhakabhaka) ayifaki ngokupheleleyo inxalenye engezantsi yesakhiwo; nokuba uhlengahlengiso oluthile lwenkqubo lwenziwa kwi-CVD (CVD B) ukufikelela kwi-coverage, ukusebenza kwefilimu kunye nokwakheka kweekhemikhali kwindawo engezantsi kubi kakhulu (ummandla omhlophe kumfanekiso); ngokuchaseneyo, ukusetyenziswa kobuchwepheshe be-ALD kubonisa ukukhutshwa kwefilimu epheleleyo, kunye nekhwalithi ephezulu kunye neempawu zefilimu ezifanayo zifezekiswa kuzo zonke iindawo zesakhiwo.

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—-Izinto eziluncedo zeMifanekiso yetekhnoloji ye-ALD xa kuthelekiswa neCVD (Umthombo: ASM)—-

Nangona i-CVD isenesona sabelo sikhulu semarike kwixesha elifutshane, i-ALD iye yaba yenye yezona ndawo zikhula ngokukhawuleza kwimakethi yezixhobo ze-wafer fab. Kule marike ye-ALD enesakhono esikhulu sokukhula kunye nendima ephambili kwimveliso ye-chip, i-ASM yinkampani ehamba phambili kwinkalo yezixhobo ze-ALD.

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Ixesha lokuposa: Jun-12-2024
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