Mathata a tekheniki a ho hlahisa li-wafers tsa boleng bo holimo tsa silicon carbide tse nang le ts'ebetso e tsitsitseng a kenyelletsa:
1) Kaha likristale li hloka ho hola sebakeng se tiisitsoeng sa mocheso o phahameng ho feta 2000 ° C, litlhoko tsa taolo ea mocheso li phahame haholo;
2) Kaha silicon carbide e na le meaho e fetang 200 ea kristale, empa ke meaho e fokolang feela ea kristale e le 'ngoe ea silicon carbide e hlokahalang lisebelisoa tsa semiconductor, karo-karolelano ea silicon-khabone, sekhahla sa mocheso oa kholo, le kholo ea kristale e hloka ho laoloa ka nepo nakong eo. ts'ebetso ea kholo ea kristale. Mekhahlelo e kang lebelo le khatello ea phallo ea moea;
3) Tlas'a mokhoa oa phetisetso ea mouoane, theknoloji ea katoloso ea bophara ea kholo ea silicon carbide crystal e thata haholo;
4) Ho thatafala ha silicon carbide ho haufi le daemane, 'me mekhoa ea ho seha, ho sila le ho bentša ho thata.
Li-wafers tsa SiC epitaxial: hangata li etsoa ka mokhoa oa lik'hemik'hale tsa mouoane (CVD). Ho ea ka mefuta e fapaneng ea li-doping, li arotsoe ka li-wafers tsa epitaxial tsa mofuta oa n-mofuta oa p. Hantian Tiancheng le Dongguan Tianyu ba se ba ntse ba ka fana ka li-wafers tsa SiC tsa 4-inch/6-inch. Bakeng sa SiC epitaxy, ho thata ho laola lebaleng la motlakase o phahameng, 'me boleng ba SiC epitaxy bo na le tšusumetso e kholo ho lisebelisoa tsa SiC. Ho feta moo, lisebelisoa tsa epitaxial li laoloa ke lik'hamphani tse 'nè tse ka sehloohong tsa indasteri: Axitron, LPE, TEL le Nuflare.
Silicon carbide epitaxialwafer e bua ka sephaphatha sa silicon carbide moo filimi e le 'ngoe ea kristale (epitaxial layer) e nang le litlhoko tse itseng le e ts'oanang le kristale ea substrate e lengoang holim'a substrate ea pele ea silicon carbide. Ho hōla ha Epitaxial haholo-holo ho sebelisa lisebelisoa tsa CVD (Chemical Vapor Deposition, ) kapa lisebelisoa tsa MBE (Molecular Beam Epitaxy). Kaha lisebelisoa tsa silicon carbide li etsoa ka ho toba karolong ea epitaxial, boleng ba epitaxial layer bo ama ka ho toba tshebetso le lihlahisoa tsa sesebelisoa. Ha motlakase o mamella ts'ebetso ea sesebelisoa e ntse e eketseha, botenya ba lera la epitaxial le tsamaisanang le fetoha le matla le ho laola ho ba thata.Ka kakaretso, ha motlakase o le haufi le 600V, botenya bo hlokahalang ba epitaxial ke hoo e ka bang 6 microns; ha motlakase o le pakeng tsa 1200-1700V, botenya bo hlokahalang ba epitaxial bo fihla ho 10-15 microns. Haeba motlakase o fihla ho feta li-volts tse 10,000, ho ka hlokahala hore ho be le botenya ba epitaxial bo fetang 100 microns. Ha botenya ba lera la epitaxial le ntse le eketseha, ho ba thata le ho feta ho laola botenya le ho ts'oana ha restivity le sekoli.
Lisebelisoa tsa SiC: Machabeng, 600 ~ 1700V SiC SBD le MOSFET li entsoe indasteri. Lihlahisoa tse tloaelehileng li sebetsa maemong a motlakase a ka tlase ho 1200V mme haholo-holo li amohela TO packaging. Mabapi le litheko, lihlahisoa tsa SiC 'marakeng oa machabeng li rekoa ka makhetlo a ka bang 5-6 ho feta balekane ba bona ba Si. Leha ho le joalo, litheko li fokotseha ka sekhahla sa selemo sa 10%. ka ho atolosoa ha lisebelisoa tse holimo le tlhahiso ea lisebelisoa lilemong tse latelang tsa 2-3, phepelo ea 'maraka e tla eketseha, e leng se lebisang ho fokotseha ho eketsehileng ha theko. Ho lebeletsoe hore ha theko e fihla makhetlo a 2-3 a lihlahisoa tsa Si, melemo e tlisoang ke litšenyehelo tse fokotsehileng tsa tsamaiso le ts'ebetso e ntlafetseng e tla khanna SiC butle-butle ho nka sebaka sa 'maraka sa lisebelisoa tsa Si.
Liphutheloana tsa setso li ipapisitse le li-substrates tse thehiloeng ho silicon, athe lisebelisoa tsa semiconductor tsa moloko oa boraro li hloka moralo o mocha ka ho felletseng. Ho sebelisa meaho ea liphutheloana e thehiloeng ho silicon bakeng sa lisebelisoa tsa motlakase tse pharalletseng ho ka hlahisa litaba tse ncha le liphephetso tse amanang le khafetsa, taolo ea mocheso le ts'epahalo. Lisebelisoa tsa matla tsa SiC li na le maikutlo a mangata ho matla a parasitic le inductance. Ha ho bapisoa le lisebelisoa tsa Si, li-chips tsa matla tsa SiC li na le lebelo la ho chencha ka potlako, tse ka lebisang ho overshoot, oscillation, tahlehelo e eketsehileng ea switching, esita le ho se sebetse hantle ha sesebelisoa. Ho feta moo, lisebelisoa tsa motlakase tsa SiC li sebetsa ka mocheso o phahameng haholo, tse hlokang mekhoa e tsoetseng pele ea taolo ea mocheso.
Mefuta e fapaneng ea meaho e fapaneng e ntlafalitsoe lebaleng la liphutheloana tsa motlakase tsa semiconductor tse pharalletseng. Sephutheloana sa mojule oa motlakase oa setso sa Si-based ha se sa tšoaneleha. E le ho rarolla mathata a parasitic parameters le bofokoli ba ho felloa ke mocheso ka mokhoa o ts'oanelang oa liphutheloana tsa mojule oa matla a Si-based, SiC power module packaging e amohela khokahano e se nang mohala le thekenoloji ea pholile ea mahlakoreng a mabeli ka sebopeho sa eona, hape e amohela lisebelisoa tsa substrate tse nang le mocheso o betere. conductivity, le ho leka ho kopanya li-capacitor tsa decoupling, li-sensor tsa mocheso / tsa hajoale, le ho khanna li-circuits ka har'a sebopeho sa mojule, le ho hlahisa mefuta e fapaneng ea liphutheloana tsa module. mahlale. Ho feta moo, ho na le litšitiso tse phahameng tsa tekheniki ho tlhahiso ea lisebelisoa tsa SiC le litšenyehelo tsa tlhahiso li holimo.
Lisebelisoa tsa silicon carbide li hlahisoa ka ho beha likarolo tsa epitaxial holim'a silicon carbide substrate ka CVD. Ts'ebetso ena e kenyelletsa ho hloekisa, oxidation, photolithography, etching, ho tlosoa ha photoresist, ho kenngoa ha ion, mouoane oa lik'hemik'hale oa silicon nitride, polishing, sputtering, le mehato e latelang ea ts'ebetso ho theha sebopeho sa sesebelisoa ho SiC single crystal substrate. Mefuta e ka sehloohong ea lisebelisoa tsa matla tsa SiC e kenyelletsa diode tsa SiC, li-transistors tsa SiC, le li-module tsa matla tsa SiC. Ka lebaka la lintlha tse kang lebelo la tlhahiso ea thepa e tsamaeang butle le litheko tse tlase tsa tlhahiso, lisebelisoa tsa silicon carbide li na le litšenyehelo tse phahameng tsa tlhahiso.
Ntle le moo, tlhahiso ea lisebelisoa tsa silicon carbide e na le mathata a itseng a tekheniki:
1) Hoa hlokahala ho hlahisa mokhoa o itseng o lumellanang le litšobotsi tsa thepa ea silicon carbide. Ka mohlala: SiC e na le sebaka se phahameng sa ho qhibiliha, e leng se etsang hore ho hasana ha mocheso oa setso ho se sebetse. Hoa hlokahala ho sebelisa mokhoa oa ion implantation doping le ho laola ka nepo maemo a joalo ka mocheso, sekhahla sa ho futhumatsa, nako le phallo ea khase; SiC ke inert ho solvents lik'hemik'hale. Mekhoa e joalo ka etching e omeletseng e lokela ho sebelisoa, 'me lisebelisoa tsa mask, motsoako oa khase, taolo ea letsoapo la mahlakoreng, sekhahla sa ho qoelisoa, ho ba mahlahahlaha ka mahlakoreng, joalo-joalo li lokela ho ntlafatsoa le ho ntlafatsoa;
2) Ho etsoa ha li-electrode tsa tšepe ho li-wafers tsa silicon carbide ho hloka khanyetso ea ho ikopanya ka tlase ho 10-5Ω2. Lisebelisoa tsa electrode tse finyellang litlhoko, Ni le Al, li na le botsitso bo futsanehileng ba mocheso ka holimo ho 100 ° C, empa Al / Ni e na le botsitso bo molemo ba mocheso. Khanyetso e khethehileng ea ho ikopanya ea /W/Au composite electrode material is 10-3Ω2 holimo;
3) SiC e na le liaparo tse phahameng tsa ho itšeha, 'me boima ba SiC ke ba bobeli feela ho daemane, e leng se hlahisang litlhoko tse phahameng tsa ho itšeha, ho sila, ho bentša le mekhoa e meng ea theknoloji.
Ho feta moo, lisebelisoa tsa motlakase tsa silicon carbide li thata haholo ho li etsa. Ho latela meaho e fapaneng ea sesebelisoa, lisebelisoa tsa matla tsa silicon carbide li ka aroloa haholo ka lisebelisoa tsa planar le lisebelisoa tsa foro. Lisebelisoa tsa motlakase tsa planar silicon carbide li na le ts'ebetso e ntle ea yuniti le ts'ebetso e bonolo ea tlhahiso, empa li na le ts'ebetso ea JFET ebile li na le matla a phahameng a likokoana-hloko le khanyetso ea mmuso. Ha ho bapisoa le lisebelisoa tsa planar, lisebelisoa tsa motlakase tsa trench silicon carbide li na le ts'ebetso e tlase ea unit mme li na le ts'ebetso e rarahaneng ea tlhahiso. Leha ho le joalo, sebopeho sa foro se thusa ho eketsa sekhahla sa lisebelisoa tsa lisebelisoa 'me ha se na monyetla oa ho hlahisa phello ea JFET, e leng molemo ho rarolla bothata ba ho tsamaea ha mocha. E na le thepa e ntle haholo joalo ka ho hanyetsa lintho tse nyane, matla a manyane a parasitic, le tšebeliso e tlase ea matla a matla. E na le litšenyehelo tse kholo le melemo ea ts'ebetso 'me e fetohile tataiso e ka sehloohong ea nts'etsopele ea lisebelisoa tsa matla tsa silicon carbide. Ho latela webosaete ea semmuso ea Rohm, sebopeho sa ROHM Gen3 (sebopeho sa Gen1 Trench) ke 75% feela ea sebaka sa chip sa Gen2 (Plannar2), 'me ho hanyetsa ha sebopeho sa ROHM Gen3 ho fokotsehile ka 50% tlasa boholo bo tšoanang ba chip.
Silicon carbide substrate, epitaxy, front-end, R&D litsenyehelo le tse ling li etsa 47%, 23%, 19%, 6% le 5% ea litšenyehelo tsa tlhahiso ea lisebelisoa tsa silicon carbide ka ho latellana.
Qetellong, re tla shebana le ho qhaqha mekoallo ea tekheniki ea li-substrates tsa ketane ea indasteri ea silicon carbide.
Mokhoa oa tlhahiso ea silicon carbide substrates o tšoana le oa silicon-based substrates, empa o thata haholoanyane.
Ts'ebetso ea tlhahiso ea silicon carbide substrate ka kakaretso e kenyelletsa motsoako oa lisebelisoa tse tala, kholo ea kristale, ts'ebetso ea ingot, ho itšeha, ho sila ka liphaephe, ho bentsa, ho hloekisa le likhokahano tse ling.
Sethala sa kholo ea kristale ke motheo oa ts'ebetso eohle, 'me mohato ona o khetholla thepa ea motlakase ea silicon carbide substrate.
Lisebelisoa tsa silicon carbide li thata ho hola sebakeng sa mokelikeli tlas'a maemo a tloaelehileng. Mokhoa oa ho holisa karolo ea mouoane o tsebahalang 'marakeng kajeno o na le mocheso oa kholo o kaholimo ho 2300°C mme o hloka taolo e nepahetseng ea mocheso oa kholo. Ts'ebetso eohle ea ts'ebetso e batla e le thata ho e hlokomela. Phoso e nyane e tla lebisa ho hlakoloeng ha sehlahisoa. Ha ho bapisoa, lisebelisoa tsa silicon li hloka feela 1600 ℃, e tlase haholo. Ho lokisa li-substrates tsa silicon carbide ho boetse ho tobana le mathata a kang kholo e liehang ea kristale le litlhoko tse phahameng tsa kristale. Ho hola ha silicon carbide wafer ho nka matsatsi a ka bang 7 ho isa ho a 10, ha ho hula ha molamu oa silicon ho nka matsatsi a 2 le halofo feela. Ho feta moo, silicon carbide ke thepa eo boima ba eona e leng ba bobeli feela ho daemane. E tla lahleheloa haholo nakong ea ho seha, ho sila le ho bentša, 'me karolelano ea lihlahisoa ke 60% feela.
Rea tseba hore mokhoa ona ke ho eketsa boholo ba silicon carbide substrates, ha boholo bo ntse bo eketseha, litlhoko tsa theknoloji ea ho atolosa bophara li ntse li phahama le ho feta. E hloka motsoako oa likarolo tse fapaneng tsa taolo ea tekheniki ho fihlela kholo e pheta-phetoang ea likristale.
Nako ea poso: May-22-2024