Moloko oa pele oa thepa ea semiconductor e emeloa ke silicon ea setso (Si) le germanium (Ge), e leng motheo oa tlhahiso e kopanetsoeng ea potoloho. Li sebelisoa haholo ho li-transistors le li-detectors tse nang le matla a tlase, maqhubu a tlaase le a tlaase. Ho feta 90% ea lihlahisoa tsa semiconductor E entsoe ka thepa e thehiloeng ka silicon;
Lisebelisoa tsa semiconductor tsa moloko oa bobeli li emeloa ke gallium arsenide (GaAs), indium phosphide (InP) le gallium phosphide (GaP). Ha li bapisoa le lisebelisoa tse thehiloeng ka silicon, li na le lisebelisoa tsa optoelectronic tse phahameng-frequency le lebelo le phahameng 'me li sebelisoa haholo masimong a optoelectronics le microelectronics. ;
Moloko oa boraro oa thepa ea semiconductor e emeloa ke lisebelisoa tse hlahang tse kang silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond (C), le aluminium nitride (AlN).
Silicon carbideke thepa ea bohlokoa ea mantlha bakeng sa nts'etsopele ea indasteri ea semiconductor ea moloko oa boraro. Lisebelisoa tsa matla tsa silicon carbide li ka kopana ka katleho le litlhoko tse phahameng, tse nyenyane le tse bobebe tsa lisebelisoa tsa elektroniki tsa matla ka ho hanyetsa ha tsona ka matla a phahameng a matla, ho hanyetsa mocheso o phahameng, tahlehelo e tlaase le thepa e meng.
Ka lebaka la thepa ea eona e phahameng ea 'mele: lekhalo le phahameng la sehlopha (le tsamaellanang le sebaka se phahameng sa motlakase le matla a phahameng a matla), motlakase o phahameng oa motlakase, le mocheso o phahameng oa mocheso, ho lebelletsoe hore e tla ba lisebelisoa tsa mantlha tse sebelisoang haholo ho etsa li-semiconductor chips nakong e tlang. . Haholo-holo masimong a likoloi tse ncha tsa matla, motlakase oa photovoltaic, lipalangoang tsa terene, li-grids tse bohlale le masimo a mang, e na le melemo e totobetseng.
Ts'ebetso ea tlhahiso ea SiC e arotsoe ka mehato e meraro e meholo: kholo ea kristale e le 'ngoe ea SiC, kholo ea epitaxial layer le tlhahiso ea lisebelisoa, e tsamaellanang le likhokahano tse' nè tse kholo tsa ketane ea indasteri:substrate, epitaxy, lisebelisoa le li-module.
Mokhoa o ka sehloohong oa ho etsa li-substrates pele o sebelisa mokhoa oa 'mele oa sublimation oa mouoane ho fokotsa phofo sebakeng sa mocheso o phahameng oa mocheso, le ho holisa likristale tsa silicon carbide holim'a kristale ea peo ka taolo ea sebaka sa mocheso. Ho sebelisa sephaphatha sa silicon carbide e le substrate, ho kenngoa ha mouoane oa lik'hemik'hale ho sebelisoa ho beha lesela la kristale e le 'ngoe holim'a sephaphatha ho etsa sephaphatha sa epitaxial. Har'a bona, ho hōlisa silicon carbide epitaxial layer holim'a substrate ea conductive silicon carbide ho ka etsoa lisebelisoa tsa matla, tse sebelisoang haholo-holo likoloing tsa motlakase, photovoltaics le masimo a mang; ho holisa gallium nitride epitaxial layer ho semi-insulatingkarolo ea silicon carbidee ka boela ea etsoa lisebelisoa tsa maqhubu a seea-le-moea, tse sebelisoang lipuisanong tsa 5G le likarolo tse ling.
Hajoale, li-substrates tsa silicon carbide li na le lithibelo tse phahameng ka ho fetisisa tsa tekheniki ho ketane ea indasteri ea silicon carbide, 'me li-substrates tsa silicon carbide ke tsona tse thata ka ho fetisisa ho li hlahisa.
Sekhahla sa tlhahiso ea SiC ha se e-s'o rarolloe ka ho feletseng, 'me boleng ba litšiea tse tala tsa kristale ha bo tsitse' me ho na le bothata ba lihlahisoa, bo lebisang ho theko e phahameng ea lisebelisoa tsa SiC. Ho nka matsatsi a 3 feela hore thepa ea silicon e hōle ho ba molamu oa kristale, empa ho nka beke bakeng sa molamu oa silicon carbide crystal. Molamu o akaretsang oa silicon o ka hola bolelele ba 200cm, empa molamu oa silicon carbide crystal o ka hola feela 2cm ka bolelele. Ho feta moo, SiC ka boeona ke thepa e thata le e brittle, 'me li-wafers tse entsoeng ka eona li na le tšekamelo ea ho phunya ha li sebelisa mokhoa oa setso oa ho itšeha, o amang tlhahiso ea sehlahisoa le ho tšepahala. Li-substrates tsa SiC li fapane haholo le li-ingots tsa setso tsa silicon, 'me ntho e' ngoe le e 'ngoe ho tloha lisebelisoa, mekhoa, ho sebetsa ho ea ho itšeha ho hloka ho ntlafatsoa ho sebetsana le silicon carbide.
Ketane ea indasteri ea silicon carbide e arotsoe haholo ka lihokelo tse 'ne tse kholo: substrate, epitaxy, lisebelisoa le lits'ebetso. Lisebelisoa tsa substrate ke motheo oa ketane ea indasteri, lisebelisoa tsa epitaxial ke senotlolo sa tlhahiso ea lisebelisoa, lisebelisoa ke motheo oa ketane ea indasteri, 'me likopo ke tsona tse susumetsang nts'etsopele ea indasteri. Indasteri e holimo e sebelisa lisebelisoa tse tala ho etsa lisebelisoa tsa substrate ka mekhoa ea 'mele ea sublimation ea mouoane le mekhoa e meng, ebe e sebelisa mekhoa ea ho beha mouoane oa lik'hemik'hale le mekhoa e meng ho holisa thepa ea epitaxial. Indasteri ea bohareng e sebelisa lisebelisoa tse holimo ho etsa lisebelisoa tsa maqhubu a seea-le-moea, lisebelisoa tsa motlakase le lisebelisoa tse ling, tse qetellang li sebelisoa mecheng ea puisano ea 5G. , likoloi tsa motlakase, lipalangoang tsa terene, joalo-joalo Har'a tsona, substrate le epitaxy account bakeng sa 60% ea litšenyehelo tsa ketane ea indasteri 'me ke boleng bo ka sehloohong ba ketane ea indasteri.
SiC substrate: Likristale tsa SiC hangata li etsoa ka mokhoa oa Lely. Lihlahisoa tse tloaelehileng tsa machaba li ntse li fetoha ho tloha ho 4 inches ho ea ho 6 inches, 'me lihlahisoa tsa 8-inch conductive substrate li entsoe. Li-substrates tsa lapeng li boholo ba lisenthimithara tse 4. Kaha mela e teng ea tlhahiso ea silicon ea 6-inch e ka ntlafatsoa le ho fetoloa hore e hlahise lisebelisoa tsa SiC, karolo e phahameng ea 'maraka ea li-substrate tsa 6-inch SiC e tla bolokoa nako e telele.
Ts'ebetso ea silicon carbide substrate e rarahane ebile e thata ho e hlahisa. Silicon carbide substrate ke motsoako oa semiconductor single crystal material e entsoeng ka lintho tse peli: carbon le silicon. Hona joale, indasteri haholo-holo e sebelisa phofo e phahameng ea carbon le phofo e phahameng ea silicon e le lisebelisoa tse tala ho kopanya phofo ea silicon carbide. Tlas'a sebaka se khethehileng sa mocheso, mokhoa oa phetisetso ea mouoane oa 'mele o hōlileng tsebong (mokhoa oa PVT) o sebelisetsoa ho hōlisa silicon carbide ea boholo bo fapaneng ka sebōping sa khōlo ea kristale. Ingot ea kristale e qetella e sebetsoa, e khaoloa, e fatše, e bentšitsoe, e hloekisoa le mekhoa e meng e mengata ho hlahisa silicon carbide substrate.
Nako ea poso: May-22-2024