Selelekela saSilicon Carbide
Silicon carbide (SIC) e na le boima ba 3.2g / cm3. silicon carbide ea tlhaho ha e fumanehe haholo 'me e entsoe haholo ka mokhoa oa maiketsetso. Ho ea ka lihlopha tse fapaneng tsa sebopeho sa kristale, silicon carbide e ka aroloa ka mekhahlelo e 'meli: α SiC le β SiC. Semiconductor ea moloko oa boraro e emeloang ke silicon carbide (SIC) e na le maqhubu a phahameng, bokhoni bo phahameng, matla a phahameng, ho hanyetsa khatello e phahameng, ho hanyetsa mocheso o phahameng le ho hanyetsa mahlaseli a matla. E loketse litlhoko tse kholo tsa leano la paballo ea matla le phokotso ea moea, tlhahiso e bohlale le ts'ireletso ea tlhahisoleseling. Ke ho ts'ehetsa boqapi bo ikemetseng le nts'etsopele le phetoho ea puisano ea mohala oa moloko o mocha, likoloi tse ncha tsa matla, literene tsa lebelo le phahameng, Marang-rang a matla le liindasteri tse ling Thepa e ntlafalitsoeng ea mantlha le likarolo tsa elektroniki e se e le sepheo sa theknoloji ea semiconductor ea lefats'e le tlholisano ea indasteri. . Ka 2020, mokhoa oa lefats'e oa moruo le khoebo o nakong ea ntlafatso, 'me tikoloho ea kahare le kantle ea moruo oa China e rarahane ebile e matla, empa indasteri ea semiconductor ea moloko oa boraro lefatšeng e ntse e hola khahlano le mokhoa ona. Hoa hlokahala ho hlokomela hore indasteri ea silicon carbide e kene sethaleng se secha sa nts'etsopele.
Silicon carbidekopo
Sesebelisoa sa Silicon carbide indastering ea semiconductor silicon carbide semiconductor industry haholo-holo e kenyelletsa phofo e phahameng ea silicon carbide, substrate e le 'ngoe ea kristale, epitaxial, sesebelisoa sa matla, sephutheloana sa module le ts'ebeliso ea terminal, joalo-joalo.
1. substrate e le 'ngoe ea kristale ke thepa ea tšehetso, thepa ea conductive le epitaxial kgolo substrate ea semiconductor. Hona joale, mekhoa ea ho hōla ea SiC single crystal e kenyelletsa phetiso ea khase ea 'mele (PVT), mohato oa metsi (LPE), mocheso o phahameng oa lik'hemik'hale oa mouoane (htcvd) joalo-joalo. 2. epitaxial silicon carbide epitaxial sheet e bolela ho hōla ha filimi e le 'ngoe ea kristale (epitaxial layer) e nang le litlhoko tse itseng le mokhoa o tšoanang le oa substrate. Ts'ebelisong e sebetsang, lisebelisoa tsa semiconductor tse pharalletseng li batla li le mokatong oa epitaxial, 'me li-chips tsa silicon carbide ka botsona li sebelisoa e le li-substrates, ho kenyeletsoa le likarolo tsa Gan epitaxial.
3. bohloeki bo phahamengSiCphofo ke thepa e tala bakeng sa kholo ea silicon carbide single crystal ka mokhoa oa PVT. Bohloeki ba sehlahisoa sa eona bo ama ka kotloloho boleng ba kholo le thepa ea motlakase ea SiC single crystal.
4. sesebelisoa sa matla se entsoe ka silicon carbide, e nang le litšobotsi tsa ho hanyetsa mocheso o phahameng, maqhubu a phahameng le bokhoni bo phahameng. Ho latela mokhoa oa ho sebetsa oa sesebelisoa,SiClisebelisoa tsa motlakase haholo-holo li kenyelletsa diode tsa motlakase le li-tubes tsa switch switch.
5. ts'ebetsong ea semiconductor ea moloko oa boraro, melemo ea ts'ebetso ea ho qetela ke hore e ka tlatsetsa semiconductor ea GaN. Ka lebaka la melemo ea ts'ebetso e phahameng ea phetoho, litšoaneleho tse tlase tsa mocheso le boima bo bobebe ba lisebelisoa tsa SiC, tlhoko ea indasteri e tlase e ntse e eketseha, e nang le mokhoa oa ho nkela lisebelisoa tsa SiO2 sebaka. Boemo ba hajoale ba nts'etsopele ea 'maraka oa silicon carbide bo ntse bo tsoela pele. Silicon carbide e etella pele ts'ebeliso ea 'maraka ea nts'etsopele ea semiconductor ea moloko oa boraro. Lihlahisoa tsa semiconductor tsa moloko oa boraro li kentsoe ka potlako, masimo a kopo a ntse a atoloha ka mokhoa o sa khaotseng, 'me mmaraka o ntse o hola ka potlako ka nts'etsopele ea lisebelisoa tsa motlakase tsa koloi, puisano ea 5g, phepelo ea matla a ho tjhaja ka potlako le ts'ebeliso ea sesole. .
Nako ea poso: Mar-16-2021