C, N, B ea morao-rao le lisebelisoa tse ling tse se nang oxide tse phahameng tsa refractory, khatello ea sepakapaka sintered silicon carbide e pharaletseng, moruo, ho ka boleloa hore ke lehlabathe la emery kapa refractory. Silicon carbide e hloekileng ke kristale e bonaletsang e se nang 'mala. Joale sebopeho sa thepa le litšobotsi tsa silicon carbide ke eng?
Sintered silicon carbide tlas'a khatello ea sepakapaka
Sebopeho sa thepa ea khatello ea sepakapaka sintered silicon carbide:
Khatello ea sepakapaka sintered silicon carbide e sebelisoang indastering ke mosehla o mosehla, o motala, o moputsoa le o motšo ho latela mofuta le litaba tsa litšila, 'me bohloeki bo fapane le ho pepeseha ho fapane. Sebopeho sa kristale sa silicon carbide se arotsoe ka plutonium e nang le mantsoe a tšeletseng kapa taemane le cubic plutonium-sic. Plutonium-sic e theha mefuta e fapaneng ea deformation ka lebaka la tatellano e fapaneng ea stacking ea liathomo tsa khabone le silicon ka sebopeho sa kristale, mme mefuta e fetang 70 ea deformation e fumanoe. beta-SIC e fetolela ho alpha-SIC ka holimo ho 2100. Mokhoa oa indasteri oa silicon carbide o hloekisoa ka lehlabathe la boleng bo phahameng ba quartz le petroleum coke ka sebōping sa ho hanyetsa. Li-block tsa silicon carbide tse hloekisitsoeng li silakiloe, ho hloekisoa ha acid-base, karohano ea makenete, tlhahlobo kapa khetho ea metsi ho hlahisa lihlahisoa tse fapaneng tsa boholo ba likaroloana.
Litšobotsi tsa thepa ea khatello ea sepakapaka sintered silicon carbide:
Silicon carbide e na le botsitso bo botle ba lik'hemik'hale, conductivity ea mocheso, coefficient ea ho atolosa mocheso, ho hanyetsa ho apara, kahoo ntle le tšebeliso ea abrasive, ho na le lisebelisoa tse ngata: Ka mohlala, phofo ea silicon carbide e koahetsoe leboteng le ka hare la mochine o motlakase kapa cylinder block le. ts'ebetso e khethehileng, e ka ntlafatsang ho hanyetsa ho roala le ho lelefatsa bophelo ba 1 ho isa ho makhetlo a 2. E entsoe ka mocheso o sa keneleng mocheso, boholo bo nyane, boima bo bobebe, matla a phahameng a lisebelisoa tsa refractory tse phahameng, matla a matla a matla haholo. Silicon carbide ea boemo bo tlaase (ho kenyeletsoa hoo e ka bang 85% SiC) ke deoxidizer e babatsehang bakeng sa ho eketsa lebelo la ho etsa tšepe le ho laola lik'hemik'hale habonolo ho ntlafatsa boleng ba tšepe. Ntle le moo, khatello ea sepakapaka sintered silicon carbide e boetse e sebelisoa haholo ha ho etsoa likarolo tsa motlakase tsa lithupa tsa silicon carbon.
Silicon carbide e thata haholo. Morse hardness ke 9.5, ea bobeli ho daemane e thata ea lefats'e (10), ke semiconductor e nang le conductivity e ntle ea mocheso, e ka hanyetsa oxidation ka mocheso o phahameng. Silicon carbide e na le bonyane mefuta e 70 ea kristale. Plutonium-silicon carbide ke isoma e tloaelehileng e hlahang mochesong o ka holimo ho 2000 'me e na le sebopeho sa kristale sa hexagonal (se tšoanang le wurtzite). Sintered silicon carbide tlas'a khatello ea sepakapaka
Tšebeliso ea silicon carbide indastering ea semiconductor
Letoto la indasteri ea silicon carbide semiconductor haholo-holo le kenyelletsa phofo e phahameng ea silicon carbide, substrate e le 'ngoe ea kristale, letlapa la epitaxial, likarolo tsa matla, liphutheloana tsa module le lisebelisoa tsa ho qetela.
1. Karolo e le 'ngoe ea kristale e le' ngoe ea kristale e le 'ngoe ke sesebelisoa se tšehetsang semiconductor, thepa ea conductive le substrate ea kgolo ea epitaxial. Hona joale, mekhoa ea ho hōla ha kristale e le 'ngoe ea SiC e kenyelletsa mokhoa oa ho fetisa mouoane oa' mele (mokhoa oa PVT), mokhoa oa mokelikeli oa metsi (mokhoa oa LPE), le mokhoa o phahameng oa mocheso oa lik'hemik'hale oa mouoane (mokhoa oa HTCVD). Sintered silicon carbide tlas'a khatello ea sepakapaka
2. Letlapa la Epitaxial Silicon carbide epitaxial sheet, silicon carbide sheet, filimi e le 'ngoe ea kristale (epitaxial layer) e nang le tataiso e tšoanang le ea kristale ea substrate e nang le litlhoko tse itseng tsa silicon carbide substrate. Lits'ebetsong tse sebetsang, lisebelisoa tsa semiconductor tse pharaletseng tsa band gap li batla li entsoe ka har'a epitaxial layer, 'me silicon chip ka boeona e sebelisoa feela e le substrate, ho kenyelletsa le substrate ea GaN epitaxial layer.
3. Phofo e phahameng ea silicon carbide phofo e phahameng-e hloekileng silicon carbide phofo ke lisebelisoa tse tala bakeng sa ho hōla ha silicon carbide single crystal ka mokhoa oa PVT, 'me ho hloeka ha sehlahisoa ho ama ka ho toba boleng ba khōlo le litšobotsi tsa motlakase tsa silicon carbide single crystal.
4. Sesebelisoa sa matla se na le matla a mangata a marang-rang a entsoeng ka thepa ea silicon carbide, e nang le litšobotsi tsa mocheso o phahameng, maqhubu a phahameng le bokhoni bo phahameng. Ho ea ka mokhoa oa ho sebetsa oa sesebelisoa, sesebelisoa sa matla sa SiC se kenyelletsa haholo-holo diode ea matla le tube ea ho fetola matla.
5. Terminal Likopong tsa semiconductor tsa moloko oa boraro, li-semiconductors tsa silicon carbide li na le monyetla oa ho tlatsetsa ho gallium nitride semiconductors. Ka lebaka la ts'ebetso e phahameng ea phetoho, litšoaneleho tse tlaase tsa ho futhumatsa, tse bobebe le melemo e meng ea lisebelisoa tsa SiC, tlhokahalo ea indasteri e tlaase e ntse e eketseha, 'me ho na le mokhoa oa ho nkela lisebelisoa tsa SiO2 sebaka.
Nako ea poso: Jun-16-2023