Theknoloji ea laser e etella pele phetoho ea theknoloji ea silicon carbide substrate processing

 

1. Kakaretso eakarolo ea silicon carbidetheknoloji ea ho sebetsa

Ea hajoalekarolo ea silicon carbide mehato ea ho sebetsa e kenyelletsa: ho sila selikalikoe se ka ntle, ho senya, ho chamfering, ho sila, ho polishing, ho hloekisa, joalo-joalo Slicing ke mohato oa bohlokoa oa ho sebetsa ha semiconductor substrate le mohato oa bohlokoa oa ho fetola ingot ho substrate. Hajoale, ho seha halikaroloana tsa silicon carbidehaholo-holo terata. Multi-wire slurry cutting ke mokhoa o molemo ka ho fetisisa oa ho seha terata hajoale, empa ho ntse ho e-na le mathata a boleng bo bobe ba ho itšeha le tahlehelo e kholo ea ho itšeha. Tahlehelo ea ho itšeha ka terata e tla eketseha ka keketseho ea boholo ba substrate, e sa lokelang hokarolo ea silicon carbidebahlahisi ho fihlela phokotso ea litšenyehelo le ntlafatso ea katleho. Nakong ea ho khaola8-inch silicon carbide substrates, sebopeho sa holim'a substrate se fumanoang ka ho khaola terata se futsanehile, 'me litšobotsi tsa linomoro tse kang WARP le BOW ha li ntle.

Slicing ke mohato oa bohlokoa tlhahisong ea semiconductor substrate. Indasteri e lula e leka mekhoa e mecha ea ho seha, joalo ka ho seha terata ea daemane le ho hlobolisa laser. Theknoloji ea ho hlobolisa laser e batloa haholo morao tjena. Ho kenyelletsoa ha theknoloji ena ho fokotsa tahlehelo ea ho itšeha le ho ntlafatsa bokhoni ba ho itšeha ho tsoa ho molao-motheo oa tekheniki. Tharollo ea laser stripping e na le litlhoko tse phahameng bakeng sa boemo ba automation mme e hloka theknoloji e tšesaane ho sebelisana le eona, e tsamaellanang le tataiso ea nts'etsopele ea nakong e tlang ea silicon carbide substrate process. Lihlahisoa tsa selae sa ho seha ka terata ea seretse hangata ke 1.5-1.6. Ho hlahisoa ha theknoloji ea laser stripping ho ka eketsa chai ea selae hoo e ka bang 2.0 (sheba lisebelisoa tsa DISCO). Nakong e tlang, ha khōlo ea theknoloji ea laser stripping e ntse e eketseha, lihlahisoa tsa selae li ka 'na tsa ntlafatsoa le ho feta; ka nako e ts'oanang, laser stripping e ka boela ea ntlafatsa haholo ts'ebetso ea ho seha. Ho ea ka lipatlisiso tsa 'maraka, moetapele oa indasteri DISCO o khaola selae ka metsotso e ka bang 10-15, e sebetsang hantle haholo ho feta ho seha ha terata ea seretse hona joale ka metsotso e 60 ka selae ka seng.

Mehato ea ts'ebetso ea ho seha ka terata ea silicon carbide substrates ke: terata-grinding-rough grinding-fine grinding-rough polishing le polishing e ntle. Ka mor'a hore mokhoa oa ho phunya oa laser o nkele sebaka sa ho khaola terata, mokhoa oa ho fokotsa o sebelisoa ho nka sebaka sa ho sila, e leng ho fokotsang tahlehelo ea lilae le ho ntlafatsa ts'ebetso ea ts'ebetso. Mokhoa oa laser stripping oa ho seha, ho sila le ho bentša ha silicon carbide substrates e arotsoe ka mehato e meraro: laser surface scanning-substrate stripping-ingot flattening: laser surface scanning ke ho sebelisa ultrafast laser pulses ho sebetsana le bokaholimo ba ingot ho etsa phetoho e fetotsoeng. lera ka hare ho ingot; substrate stripping ke ho arola substrate ka holimo ho lera e fetotsoeng ho tloha ho ingot ka mekhoa ea 'mele; ingot flattening ke ho tlosa lera le fetotsoeng holim'a ingot ho netefatsa ho batalla ha bokaholimo ba ingot.
Silicon carbide laser stripping process

 

2. Khatelo-pele ea machaba ea theknoloji ea laser stripping le lik'hamphani tse nkang karolo indastering

Ts'ebetso ea ho hlobolisa laser e ile ea amoheloa ka lekhetlo la pele ke lik'hamphani tsa mose ho maoatle: Ka 2016, DISCO ea Japane e ile ea theha theknoloji e ncha ea laser ea KABRA, e etsang lera la karohano le ho arola liphaphatha ka botebo bo boletsoeng ka ho tsoela pele ho khantša ingot ka laser, e ka sebelisetsoang mefuta e fapaneng. mefuta ea li-ingots tsa SiC. Ka Pulungoana 2018, Infineon Technologies e ile ea reka Siltectra GmbH, e leng qalo ea ho seha li-wafer, bakeng sa li-euro tse limilione tse 124. Ba morao-rao ba ntlafalitse ts'ebetso ea Cold Split, e sebelisang theknoloji ea laser e nang le patented ho hlalosa mefuta e fapaneng ea ho arola, ho roala lisebelisoa tse khethehileng tsa polymer, tsamaiso ea ho laola pholileng e bakoang ke khatello ea kelello, lisebelisoa tse arohaneng ka nepo, le ho sila le ho hloekisa ho finyella ho itšeha.

Lilemong tsa morao tjena, lik'hamphani tse ling tsa malapeng le tsona li kene indastering ea lisebelisoa tsa laser: lik'hamphani tse ka sehloohong ke Han's Laser, Delong Laser, West Lake Instrument, Universal Intelligence, China Electronics Technology Group Corporation le Institute of Semiconductors ea Chinese Academy of Sciences. Har'a bona, lik'hamphani tse thathamisitsoeng Han's Laser le Delong Laser li bile teng ka nako e telele, 'me lihlahisoa tsa tsona li ntse li netefatsoa ke bareki, empa k'hamphani e na le mela e mengata ea lihlahisoa,' me lisebelisoa tsa laser stripping ke e 'ngoe feela ea likhoebo tsa bona. Lihlahisoa tsa linaleli tse ntseng li phahama tse kang West Lake Instrument li fihletse thepa e hlophisitsoeng e hlophisitsoeng; Universal Intelligence, China Electronics Technology Group Corporation 2, Institute of Semiconductors ea Chinese Academy of Sciences le lik'hamphani tse ling le tsona li lokolitse tsoelo-pele ea lisebelisoa.

 

3. Lintlha tsa ho khanna bakeng sa nts'etsopele ea theknoloji ea laser stripping le morethetho oa kenyelletso ea 'maraka

Phokotso ea theko ea 6-inch silicon carbide substrates e khanna nts'etsopele ea theknoloji ea laser stripping: Hajoale, theko ea 6-inch silicon carbide substrates e theohile ka tlase ho 4,000 yuan/sekotoana, e atamela theko ea litšenyehelo tsa bahlahisi ba bang. Ts'ebetso ea laser stripping e na le sekhahla se phahameng sa tlhahiso le phaello e matla, e tsamaisang sekhahla sa ho kenella ha theknoloji ea laser stripping ho eketseha.

Ho sesefala ha 8-inch silicon carbide substrates ho khanna ntshetsopele ya thekenoloji ya laser stripping: Botenya ba 8-inch silicon carbide substrates hajoale ke 500um, mme bo ntse bo hola ho fihla botenya ba 350um. Ts'ebetso ea ho itšeha ka terata ha e sebetse ho 8-inch silicon carbide process (sebaka sa substrate ha se hantle), mme boleng ba BOW le WARP bo senyehile haholo. Laser stripping e nkuoa e le theknoloji e hlokahalang ea ho lokisa bakeng sa 350um silicon carbide substrate process, e tsamaisang sekhahla sa ho kenella ha theknoloji ea laser stripping ho eketseha.

Litebello tsa 'maraka: SiC substrate laser stripping equipment e rua molemo ka ho atolosoa ha 8-inch SiC le phokotso ea litšenyehelo ea 6-inch SiC. Ntlha ea bohlokoa ea indasteri ea hajoale e ntse e atamela, 'me nts'etsopele ea indasteri e tla potlakisa haholo.