Daahan SiC dahaarka ah ee Graphite substrate for Semiconductor, Silicon carbide daahan, MOCVD Susceptor

Sharaxaad Gaaban:

Daahan SiC ee substrate-ka Graphite ee codsiyada Semiconductor waxay soo saartaa qayb leh nadiifnimo sare iyo iska caabin u ah jawiga oksaydhka. CVD SiC ama CVI SiC waxaa lagu dabaqaa Graphite qaybo naqshadeed fudud ama kakan. Dahaarka waxaa lagu dabaqi karaa dhumucyo kala duwan iyo qaybo aad u ballaaran.


  • Meesha Asal ahaan:Zhejiang, Shiinaha (Dhul-weynaha)
  • Nambarka Qaabka:Nambarka Qaabka:
  • Halabuurka Kiimikada:Garaafyada dahaarka leh ee SiC
  • Xoog dabacsanaan leh:470Mpa
  • Dhaqdhaqaaqa kulaylka:300 W/mK
  • Tayada:Wanaagsan
  • Shaqada:CVD-SiC
  • Codsiga:Semiconductor/Photovoltaic
  • Cufnaanta:3.21 g/cc
  • Balaadhinta kulaylka:4 10-6/K
  • Dambas: <5pm
  • Tusaale:La heli karo
  • Koodhka HS:6903100000
  • Faahfaahinta Alaabta

    Tags Product

    Daahan SiC dahaarka lehSubstrate-ka graphite ee Semiconductordaahan Silicon carbide,Susceptor MOCVD,
    Substrate graphite, Substrate-ka graphite ee Semiconductor, Susceptor MOCVD, Dahaarka Silicon Carbide,

    Sharaxaada Alaabta

    Faa'iidooyinka gaarka ah ee kuwa siciga-dahaarka leh ee susceptors-garafeedka waxaa ka mid ah nadiif aad u sarreeya, daahan isku mid ah iyo nolol adeeg oo aad u wanaagsan. Waxay sidoo kale leeyihiin iska caabin sare oo kiimiko ah iyo sifooyin xasilloon oo kulaylka.

    Dahaarka SiC eeSubstrate-ka graphite ee SemiconductorCodsiyada waxay soo saartaa qayb nadiifin sare leh oo iska caabin u ah jawiga oksaydhka.
    CVD SiC ama CVI SiC waxaa lagu dabaqaa Graphite qaybo naqshadeed fudud ama kakan. Dahaarka waxaa lagu dabaqi karaa dhumucyo kala duwan iyo qaybo aad u ballaaran.

    Dahaarka SiC/dahaarka leh ee MOCVD Susceptor

    Astaamaha:
    Caabbinta naxdinta kulaylka ee heer sare ah
    Iska caabin naxdin jidheed oo heersare ah
    · Iska caabin Kiimiko oo heersare ah
    Nadiifinta Sare ee Sare
    Helitaanka qaab isku dhafan
    Waxaa lagu isticmaali karaa hoostiisa Oxidizing Atmosphere

     

    Astaamaha Caadiga ah ee Qalabka Garaafiga ee Saldhigga:

    Cufnaanta muuqata: 1.85 g/cm3
    Iska caabin Koronto: 11 μΩm
    Xoog Jilicsan: 49 MPa (500kgf/cm2)
    Adag ee Xeebta: 58
    Dambas: <5pm
    Habdhaqanka Kulaylka: 116 W/mK (100 kcal/mhr-℃)

    Kaarboon waxa ay siisaa kuwa wax-is-dajiya iyo qaybaha graphite-ka ee dhammaan reactors epitaxy ee hadda jira. Bootfooliyadayada waxaa ka mid ah kuwa qaboojiyaha foosto oo loogu talagalay qaybaha LPE iyo LPE, kuwa qaboojiyaha canjeelada ee LPE, CSD, iyo Gemini, iyo kuwa hal-wafer ah oo loogu talagalay cutubyada la codsado iyo ASM. Iyadoo la isku darayo iskaashi xooggan oo lala yeesho OEM-yada hormuudka ah, khibradda qalabka iyo aqoonta wax soo saarka, SGL waxay ku siinaysaa naqshada ugu fiicnayd codsigaaga.

    Dahaarka SiC/dahaarka leh ee MOCVD SusceptorDahaarka SiC/dahaarka leh ee MOCVD Susceptor

    Dahaarka SiC/dahaarka leh ee MOCVD SusceptorDahaarka SiC/dahaarka leh ee MOCVD Susceptor

    Alaabooyin badan

    Dahaarka SiC/dahaarka leh ee MOCVD Susceptor

    Macluumaadka Shirkadda

    111

    Qalabka Warshada

    222

    Bakhaarka

    333

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